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Results:
1-8
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Results: 8
Authors:
DERESMES D
MARISSAEL V
STIEVENARD D
ORTEGA C
Citation: D. Deresmes et al., ELECTRICAL BEHAVIOR OF ALUMINUM - POROUS SILICON JUNCTIONS, Thin solid films, 255(1-2), 1995, pp. 258-261
Authors:
STIEVENARD D
DERESMES D
Citation: D. Stievenard et D. Deresmes, ARE ELECTRICAL-PROPERTIES OF AN ALUMINUM-POROUS SILICON JUNCTION GOVERNED BY DANGLING BONDS, Applied physics letters, 67(11), 1995, pp. 1570-1572
Authors:
ZAZOUI M
BOURGOIN JC
STIEVENARD D
DERESMES D
STROBL G
Citation: M. Zazoui et al., RECOMBINATION CENTERS IN ELECTRON-IRRADIATED CZOCHRALSKI SILICON SOLAR-CELLS, Journal of applied physics, 76(2), 1994, pp. 815-819
Authors:
CADET C
DERESMES D
VUILLAUME D
STIEVENARD D
Citation: C. Cadet et al., INFLUENCE OF SURFACE-DEFECTS ON THE ELECTRICAL BEHAVIOR OF ALUMINUM-POROUS SILICON JUNCTIONS, Applied physics letters, 64(21), 1994, pp. 2827-2829
Authors:
VUILLAUME D
DERESMES D
STIEVENARD D
Citation: D. Vuillaume et al., TEMPERATURE-DEPENDENT STUDY OF SPIN-DEPENDENT RECOMBINATION AT SILICON DANGLING BONDS, Applied physics letters, 64(13), 1994, pp. 1690-1692
Authors:
VUILLAUME D
FONTAINE P
COLLET J
DERESMES D
GARET M
RONDELEZ F
Citation: D. Vuillaume et al., ALKYL-TRICHLOROSILANE MONOLAYER AS ULTRA-THIN INSULATING FILM FOR SILICON MIS DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 101-104
Authors:
LANNOO M
VUILLAUME D
DERESMES D
STIEVENARD D
Citation: M. Lannoo et al., AN IMPROVED THEORY OF SPIN-DEPENDENT RECOMBINATION - APPLICATION TO THE PB CENTER AT THE SI-SIO2 INTERFACE, Microelectronic engineering, 22(1-4), 1993, pp. 143-146
Authors:
FONTAINE P
GOGUENHEIM D
DERESMES D
VUILLAUME D
GARET M
RONDELEZ F
Citation: P. Fontaine et al., OCTADECYLTRICHLOROSILANE MONOLAYERS AS ULTRATHIN GATE INSULATING FILMS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES, Applied physics letters, 62(18), 1993, pp. 2256-2258
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