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Results:
1-12
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Results: 12
Authors:
DUPONT G
CAQUINEAU H
DESPAX B
BERJOAN R
DOLLET A
Citation: G. Dupont et al., STRUCTURAL-PROPERTIES OF N-RICH A-SI-N-H FILMS WITH A LOW ELECTRON-TRAPPING RATE, Journal of physics. D, Applied physics, 30(7), 1997, pp. 1064-1076
Authors:
CAQUINEAU H
DESPAX B
Citation: H. Caquineau et B. Despax, INFLUENCE OF THE REACTOR DESIGN IN THE CASE OF SILICON-NITRIDE PECVD, Chemical Engineering Science, 52(17), 1997, pp. 2901-2914
Authors:
MESSAOUDI R
YOUNSI A
MASSINES F
DESPAX B
MAYOUX C
Citation: R. Messaoudi et al., INFLUENCE OF HUMIDITY ON CURRENT WAVE-FORM AND LIGHT-EMISSION OF A LOW-FREQUENCY DISCHARGE CONTROLLED BY A DIELECTRIC BARRIER, IEEE transactions on dielectrics and electrical insulation, 3(4), 1996, pp. 537-543
Authors:
CAQUINEAU H
DUPONT G
DESPAX B
COUDERC JP
Citation: H. Caquineau et al., REACTOR MODELING FOR RADIO-FREQUENCY PLASMA DEPOSITION OF SINXHY - COMPARISON BETWEEN 2 REACTOR DESIGNS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2071-2082
Authors:
DJELLOUL A
DESPAX B
COUDERC JP
DUVERNEUIL P
Citation: A. Djelloul et al., REACTOR MODELING AND ANALYSIS OF AMORPHOUS HYDROGENATED SILICON DEPOSITION BY PECVD, Journal de physique. IV, 5(C5), 1995, pp. 307-314
Authors:
DJELLOUL A
DESPAX B
COUDERC JP
DUVERNEUIL P
Citation: A. Djelloul et al., REACTOR MODELING AND ANALYSIS OF AMORPHOUS HYDROGENATED SILICON DEPOSITION BY PECVD, Journal de physique. IV, 5(C5), 1995, pp. 307-314
Authors:
DOLLET A
LAYEILLON L
COUDERC JP
DESPAX B
Citation: A. Dollet et al., ANALYSIS AND MODELING OF A PULSED-PLASMA REACTOR FOR SILICON-NITRIDE DEPOSITION - REACTOR OPTIMIZATION, Plasma sources science & technology, 4(3), 1995, pp. 459-473
Authors:
DOLLET A
COUDERC JP
DESPAX B
Citation: A. Dollet et al., ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .1. BIDIMENSIONAL MODELING, Plasma sources science & technology, 4(1), 1995, pp. 94-106
Authors:
DOLLET A
COUDERC JP
DESPAX B
Citation: A. Dollet et al., ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .2. SIMPLIFIED MODELING, SYSTEMATIC ANALYSIS AND COMPARISON WITH EXPERIMENTAL MEASUREMENTS, Plasma sources science & technology, 4(1), 1995, pp. 107-116
Authors:
LAYEILLON L
DOLLET A
DESPAX B
Citation: L. Layeillon et al., PLASMA-ENHANCED DEPOSITION OF A-SI-H - COMPARISON OF 2 REACTOR ARRANGEMENTS, Chemical engineering journal and the biochemical engineering journal, 58(1), 1995, pp. 1-5
Authors:
LORETZ JC
DESPAX B
MARTI P
MAZEL A
Citation: Jc. Loretz et al., HYDROGENATED ALUMINUM NITRIDE THIN-FILMS PREPARED BY RF REACTIVE SPUTTERING - INFRARED AND STRUCTURAL-PROPERTIES, Thin solid films, 265(1-2), 1995, pp. 15-21
Authors:
ELALLAM T
AKINNIFESI J
DESPAX B
THEGIAM H
SAIDI M
BENDAOUD M
Citation: T. Elallam et al., HYDROSTATIC-PRESSURE EFFECT ON SWITCHING PHENOMENA IN COPPER-CONTAINING PLASMA THIN-FILMS, Journal of applied physics, 76(6), 1994, pp. 3869-3874
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