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Results: 1-11 |
Results: 11
FREQUENCY-DOMAIN IDENTIFICATION WITH GENERALIZED ORTHONORMAL BASIS FUNCTIONS
Authors: DEVRIES DK VANDENHOF PMJ
Citation: Dk. Devries et Pmj. Vandenhof, FREQUENCY-DOMAIN IDENTIFICATION WITH GENERALIZED ORTHONORMAL BASIS FUNCTIONS, IEEE transactions on automatic control, 43(5), 1998, pp. 656-669
A DYNAMICAL-APPROACH TO TIME DILATION AND LENGTH CONTRACTION
Authors: DEVRIES DK DEMUYNCK WM
Citation: Dk. Devries et Wm. Demuynck, A DYNAMICAL-APPROACH TO TIME DILATION AND LENGTH CONTRACTION, Foundations of physics letters, 9(2), 1996, pp. 133-144
LATERAL ELECTRON DEPLETION IN FOCUSED-ION-BEAM IMPLANTED PSEUDOMORPHIC HETEROSTRUCTURES WITH INXGA1-XAS CHANNELS
Authors: DEVRIES DK KUNZEL H HAUSLER K PLOOG KH WIECK AD
Citation: Dk. Devries et al., LATERAL ELECTRON DEPLETION IN FOCUSED-ION-BEAM IMPLANTED PSEUDOMORPHIC HETEROSTRUCTURES WITH INXGA1-XAS CHANNELS, Solid-state electronics, 40(1-8), 1996, pp. 637-640
INTRINSIC AND EXTRINSIC CAPACITANCES OF IN-PLANE-GATED TRANSISTORS
Authors: DEVRIES DK STELMASZYK P WIECK AD
Citation: Dk. Devries et al., INTRINSIC AND EXTRINSIC CAPACITANCES OF IN-PLANE-GATED TRANSISTORS, Journal of applied physics, 79(10), 1996, pp. 8087-8090
SERIES RESISTANCE OF IN-PLANE-GATED TRANSISTORS AND QUANTUM POINT CONTACTS
Authors: DEVRIES DK WIECK AD
Citation: Dk. Devries et Ad. Wieck, SERIES RESISTANCE OF IN-PLANE-GATED TRANSISTORS AND QUANTUM POINT CONTACTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 394-395
ASYMMETRICAL SOURCE-DRAIN CHARACTERISTICS IN IN-PLANE-GATED TRANSISTORS WRITTEN BY FOCUSED ION-BEAM
Authors: DEVRIES DK WIECK AD PLOOG KH
Citation: Dk. Devries et al., ASYMMETRICAL SOURCE-DRAIN CHARACTERISTICS IN IN-PLANE-GATED TRANSISTORS WRITTEN BY FOCUSED ION-BEAM, Journal of applied physics, 77(12), 1995, pp. 6710-6714
QUANTIFICATION OF UNCERTAINTY IN TRANSFER-FUNCTION ESTIMATION - A MIXED PROBABILISTIC - WORST-CASE APPROACH
Authors: DEVRIES DK VANDENHOF PMJ
Citation: Dk. Devries et Pmj. Vandenhof, QUANTIFICATION OF UNCERTAINTY IN TRANSFER-FUNCTION ESTIMATION - A MIXED PROBABILISTIC - WORST-CASE APPROACH, Automatica, 31(4), 1995, pp. 543-557
IN-PLANE-GATE TRANSISTORS FABRICATED FROM SI SIGE HETEROSTRUCTURES BYFOCUSED ION-BEAM IMPLANTATION/
Authors: TOBBEN D DEVRIES DK WIECK AD HOLZMANN M ABSTREITER G SCHAFFLER F
Citation: D. Tobben et al., IN-PLANE-GATE TRANSISTORS FABRICATED FROM SI SIGE HETEROSTRUCTURES BYFOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 67(11), 1995, pp. 1579-1581
POTENTIAL DISTRIBUTION IN THE VAN DER PAUW TECHNIQUE
Authors: DEVRIES DK WIECK AD
Citation: Dk. Devries et Ad. Wieck, POTENTIAL DISTRIBUTION IN THE VAN DER PAUW TECHNIQUE, American journal of physics, 63(12), 1995, pp. 1074-1078
DISCRETIZATION OF CURVED LINES AND ARBITRARY AREAS FOR ION AND ELECTRON-BEAM WRITING ON A NONRECTANGULAR GRID
Authors: DEVRIES DK WIECK AD PLOOG K
Citation: Dk. Devries et al., DISCRETIZATION OF CURVED LINES AND ARBITRARY AREAS FOR ION AND ELECTRON-BEAM WRITING ON A NONRECTANGULAR GRID, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 14-19
QUASI-ONE-DIMENSIONAL BALLISTIC ELECTRON-TRANSPORT IN IN-PLANE-GATED CHANNELS AT LIQUID-NITROGEN TEMPERATURE
Authors: DEVRIES DK PLOOG K WIECK AD
Citation: Dk. Devries et al., QUASI-ONE-DIMENSIONAL BALLISTIC ELECTRON-TRANSPORT IN IN-PLANE-GATED CHANNELS AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 37(4-6), 1994, pp. 701-703
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