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Results: 1-13 |
Results: 13
SPACE-VARIANT NONORTHOGONAL STRUCTURE CMOS IMAGE SENSOR DESIGN
Authors: PARDO F DIERICKX B SCHEFFER D
Citation: F. Pardo et al., SPACE-VARIANT NONORTHOGONAL STRUCTURE CMOS IMAGE SENSOR DESIGN, IEEE journal of solid-state circuits, 33(6), 1998, pp. 842-849
RANDOM ADDRESSABLE 2048X2048 ACTIVE PIXEL IMAGE SENSOR
Authors: SCHEFFER D DIERICKX B MEYNANTS G
Citation: D. Scheffer et al., RANDOM ADDRESSABLE 2048X2048 ACTIVE PIXEL IMAGE SENSOR, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1716-1720
CMOS FOVEATED IMAGE SENSOR - SIGNAL SCALING AND SMALL GEOMETRY-EFFECTS
Authors: PARDO F DIERICKX B SCHEFFER D
Citation: F. Pardo et al., CMOS FOVEATED IMAGE SENSOR - SIGNAL SCALING AND SMALL GEOMETRY-EFFECTS, I.E.E.E. transactions on electron devices, 44(10), 1997, pp. 1731-1737
CRYOGENIC READOUT ELECTRONICS AND TECHNOLOGY FOR FIRSTS STRESSED ARRAY
Authors: SEIJNAEVE J DIERICKX B SCHEFFER D HERMANS L HASPESLAGH L
Citation: J. Seijnaeve et al., CRYOGENIC READOUT ELECTRONICS AND TECHNOLOGY FOR FIRSTS STRESSED ARRAY, Journal de physique. IV, 6(C3), 1996, pp. 187-191
ACCESSIBLE IMAGER
Authors: DIERICKX B
Citation: B. Dierickx, ACCESSIBLE IMAGER, Photonics spectra, 29(11), 1995, pp. 76-76
RANDOM ADDRESSABLE CMOS IMAGE SENSOR FOR INDUSTRIAL APPLICATIONS
Authors: RICQUIER N DIERICKX B
Citation: N. Ricquier et B. Dierickx, RANDOM ADDRESSABLE CMOS IMAGE SENSOR FOR INDUSTRIAL APPLICATIONS, Sensors and actuators. A, Physical, 44(1), 1994, pp. 29-35
ON THE GATE-VOLTAGE AND DRAIN-VOLTAGE DEPENDENCE OF THE RTS AMPLITUDEIN SUBMICRON MOSTS
Authors: SIMOEN E DIERICKX B DECANNE B THOMA F CLAEYS C
Citation: E. Simoen et al., ON THE GATE-VOLTAGE AND DRAIN-VOLTAGE DEPENDENCE OF THE RTS AMPLITUDEIN SUBMICRON MOSTS, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 353-358
DEVELOPMENT OF SILICON MICROPATTERN PIXEL DETECTORS
Authors: HEIJNE EHM ANTINORI F BEKER H BATIGNANI G BEUSCH W BONVICINI V BOSISIO L BOUTONNET C BURGER P CAMPBELL M CANTONI P CATANESI MG CHESI E CLAEYS C CLEMENS JC SOLAL MC DARBO G DAVIA C DEBUSSCHERE I DELPIERRE P DIBARI D DILIBERTO S DIERICKX B ENZ CC FOCARDI E FORTI F GALLY Y GLASER M GYS T HABRARD MC HALLEWELL G HERMANS L HEUSER J HURST R INZANI P JAEGER JJ JARRON P KARTTAAVI T KERSTEN S KRUMMENACHER F LEITNER R LEMEILLEUR F LENTI V LETHEREN M LOKAJICEK M LOUKAS D MACDERMOTT M MAGGI G MANZARI V MARTINENGO P MEDDELER G MEDDI F MEKKAOUI A MENTREY A MIDDELKAMP P MORANDO M MUNNS A MUSICO P NAVA P NAVACH F NEYER C PELLEGRINI F PENGG F PEREGO R PINDO M POSPISIL S POTHEAU R QUERCIGH E REDAELLI N RIDKY J ROSSI L SAUVAGE D SEGATO G SIMONE S SOPKO B STEFANINI G STRAKOS V TEMPESTA P TONELLI G VEGNI G VERWEIJ H VIERTEL GM VRBA V WAISBARD J
Citation: Ehm. Heijne et al., DEVELOPMENT OF SILICON MICROPATTERN PIXEL DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 399-408
HOT-CARRIER DEGRADATION OF THE RANDOM TELEGRAPH SIGNAL AMPLITUDE IN SUBMICROMETER SI MOSTS
Authors: SIMOEN E DIERICKX B CLAEYS C
Citation: E. Simoen et al., HOT-CARRIER DEGRADATION OF THE RANDOM TELEGRAPH SIGNAL AMPLITUDE IN SUBMICROMETER SI MOSTS, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 283-289
INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS
Authors: DIERICKX B WOUTERS D WILLEMS G ALAERTS A DEBUSSCHERE I SIMOEN E VLUMMENS J AKIMOTO H CLAEYS C MAES H HERMANS L HEIJNE EHM JARRON P ANGHINOLFI F CAMPBELL M PENGG FX ASPELL P BOSISIO L FOCARDI E FORTI F KASHIGIN S MEKKAOUI A HABRARD MC SAUVAGE D DELPIERRE P
Citation: B. Dierickx et al., INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS, IEEE transactions on nuclear science, 40(4), 1993, pp. 753-758
LOW-FREQUENCY NOISE BEHAVIOR OF SI NMOSTS STRESSED AT 4.2 K
Authors: SIMOEN E DIERICKX B CLAEYS CL
Citation: E. Simoen et al., LOW-FREQUENCY NOISE BEHAVIOR OF SI NMOSTS STRESSED AT 4.2 K, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1296-1299
TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .1. THEORY
Authors: DIERICKX B SIMOEN E DECLERCK G
Citation: B. Dierickx et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .1. THEORY, Semiconductor science and technology, 6(9), 1991, pp. 896-904
TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR
Authors: SIMOEN E DIERICKX B CLAEYS C DECLERCK G
Citation: E. Simoen et al., TRANSIENT-RESPONSE OF SILICON DEVICES AT 4.2-K .2. APPLICATION TO THECASE OF A METAL-OXIDE SEMICONDUCTOR TRANSISTOR, Semiconductor science and technology, 6(9), 1991, pp. 905-911
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