Citation: Da. Wiss et Bs. Doyle, IRREDUCIBLE OPEN INTERTROCHANTERIC HIP FRACTURE SECONDARY TO ENTRAPMENT OF THE SCIATIC-NERVE IN A CHILD, Journal of orthopaedic trauma, 11(1), 1997, pp. 38-40
Citation: Da. Wiss et Bs. Doyle, IRREDUCIBLE OPEN INTERTROCHANTERIC HIP FRACTURE SECONDARY TO ENTRAPMENT OF THE SCIATIC-NERVE IN A CHILD, Journal of orthopaedic trauma, 11(1), 1997, pp. 38-40
Citation: Bs. Doyle et A. Philipossian, ROLE OF NITRIDATION REOXIDATION OF NH3-NITRIDED GATE DIELECTRICS ON THE HOT-CARRIER RESISTANCE OF CMOS TRANSISTORS/, IEEE electron device letters, 18(6), 1997, pp. 267-269
Citation: Bs. Doyle et al., EXAMINATION OF THE TIME POWER-LAW DEPENDENCIES IN HOT-CARRIER STRESSING OF N-MOS TRANSISTORS, IEEE electron device letters, 18(2), 1997, pp. 51-53
Citation: Bs. Doyle et Kr. Mistry, NEW HOT-CARRIER FAILURE CRITERION FOR P-CHANNEL TRANSISTORS BASED ON TRANSISTOR LEAKAGE CURRENTS, Solid-state electronics, 39(11), 1996, pp. 1681-1682
Citation: S. Rubayi et Bs. Doyle, THE GLUTEUS MAXIMUS MUSCLE-SPLITTING MYOCUTANEOUS FLAP FOR TREATMENT OF SACRAL AND COCCYGEAL PRESSURE ULCERS, Plastic and reconstructive surgery, 96(6), 1995, pp. 1366-1371
Citation: Bs. Doyle et al., ANALYSIS OF GATE OXIDE THICKNESS HOT-CARRIER EFFECTS IN SURFACE CHANNEL P-MOSFETS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 116-122
Citation: Hr. Soleimani et al., FORMATION OF ULTRATHIN NITRIDED SIO2 OXIDES BY DIRECT NITROGEN IMPLANTATION INTO SILICON, Journal of the Electrochemical Society, 142(8), 1995, pp. 132-134
Authors:
SU LT
ANTONIADIS DA
ARORA ND
DOYLE BS
KRAKAUER DB
Citation: Lt. Su et al., SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING, IEEE electron device letters, 15(10), 1994, pp. 374-376
Citation: Bs. Doyle et Kr. Mistry, ANOMALOUS HOT-CARRIER BEHAVIOR FOR LDD P-CHANNEL TRANSISTORS, IEEE electron device letters, 14(11), 1993, pp. 536-538
Authors:
MISTRY KR
FOX TF
PRESTON RP
ARORA ND
DOYLE BS
NELSEN DE
Citation: Kr. Mistry et al., CIRCUIT-DESIGN GUIDELINES FOR N-CHANNEL MOSFET HOT-CARRIER ROBUSTNESS, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1284-1295
Citation: Bs. Doyle et al., EXAMINATION OF OXIDE DAMAGE DURING HIGH-CURRENT STRESS OF N-MOS TRANSISTORS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 980-985