Authors: POLYAKOV AY MILNES AG GOVORKOV AV DRUZHININA LV TUNITSKAYA IV SMIRNOV NB

Citation: Ay. Polyakov et al., BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/, Solid-state electronics, 38(2), 1995, pp. 525-529

Authors: POLYAKOV AY TUNITSKAYA IV DRUZHININA LV GOVORKOV AV SMIRNOV NB KOZHUKHOVA EA BORODINA OM MILNES AG LI XL PEARTON SJ BALMASHNOV AA

Citation: Ay. Polyakov et al., HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 137-141

Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG

Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150

Authors: POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV

Citation: Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694

Authors: POLYAKOV AY MILNES AG SMIRNOV NB DRUZHININA LV TUNITSKAYA IV

Citation: Ay. Polyakov et al., MECHANISMS OF FERMI-LEVEL PINNING IN SCHOTTKY BARRIERS ON INGAASSB AND ALGAASSB, Solid-state electronics, 36(10), 1993, pp. 1371-1373