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Results:
1-18
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Results: 18
Authors:
GAMEZCUATZIN H
DEBARROS O
BREMOND G
WARREN P
DUTARTRE D
Citation: H. Gamezcuatzin et al., RECOMBINATION MECHANISMS VIA DEEP LEVELS IN RTCVD SI SI0.85GE0.15/SI DOUBLE HETEROSTRUCTURES/, Thin solid films, 294(1-2), 1997, pp. 194-197
Authors:
DUFOURGERGAM E
MEYER F
DELMOTTE F
HUGON MC
AGIUS B
WARREN P
DUTARTRE D
Citation: E. Dufourgergam et al., ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS GROWN ON A SIGE LAYER BY DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 214-216
Authors:
BREMOND G
SOUIFI A
DEBARROS O
BENMANSOUR A
DUCROQUET F
WARREN P
DUTARTRE D
Citation: G. Bremond et al., CHARACTERIZATION OF HIGH-QUALITY RTCVD RELAXED SI1-XGEX GROWN ON GE GRADED BUFFER LAYERS ON SI BY PHOTOLUMINESCENCE SPECTROSCOPY, Journal of electronic materials, 25(7), 1996, pp. 1023-1027
Authors:
MEYER F
MAMOR M
AUBRYFORTUNA V
WARREN P
BODNAR S
DUTARTRE D
REGOLINI JL
Citation: F. Meyer et al., SCHOTTKY-BARRIER HEIGHTS ON IV-IV COMPOUND SEMICONDUCTORS, Journal of electronic materials, 25(11), 1996, pp. 1748-1753
Authors:
BREMOND G
SOUIFI A
DEBARROS O
BENMANSOUR A
WARREN P
DUTARTRE D
Citation: G. Bremond et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SI1-XGEX RELAXED PSEUDO-SUBSTRATES GROWN ON SI, Journal of crystal growth, 157(1-4), 1995, pp. 116-120
Authors:
SOUIFI A
BENYATTOU T
GUILLOT G
BREMOND G
DUTARTRE D
WARREN P
Citation: A. Souifi et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/, Journal of applied physics, 78(6), 1995, pp. 4039-4045
Authors:
CHOLLET F
WARREN P
DUTARTRE D
ANDRE E
Citation: F. Chollet et al., ATOMIC-FORCE MICROSCOPY INVESTIGATION OF TENSILE-STRESSED SILICON GROWN BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION ON SI0.68GE0.32 RELAXED PSEUDO-SUBSTRATES, JPN J A P 1, 33(12A), 1994, pp. 6437-6442
Authors:
GIROULTMATLAKOWSKI G
BOUSSETA H
LETRON B
DUTARTRE D
WARREN P
BOUZID MJ
NOUAILHAT A
ASHBURN P
CHANTRE A
Citation: G. Giroultmatlakowski et al., LOW-TEMPERATURE PERFORMANCE OF SELF-ALIGNED ETCHED POLYSILICON EMITTER PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTORS, Journal de physique. IV, 4(C6), 1994, pp. 111-115
Authors:
DUTARTRE D
WARREN P
PROVENIER F
CHOLLET F
PERIO A
Citation: D. Dutartre et al., FABRICATION OF RELAXED SI1-XGEX LAYERS ON SI SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1009-1014
Authors:
DUPUY JC
PRUDON G
DUBOIS C
WARREN P
DUTARTRE D
Citation: Jc. Dupuy et al., DEPTH RESOLUTION IN SIMS STUDY OF BORON DELTA-DOPING IN EPITAXIAL SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 379-382
Authors:
WARREN P
SAGNES I
DUTARTRE D
BADOZ PA
BERROIR JM
GULDNER Y
VIEREN JP
VOOS M
Citation: P. Warren et al., CHARGE-TRANSFER IN P(-SI SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES GROWN BY RTCVD()), Microelectronic engineering, 25(2-4), 1994, pp. 171-176
Authors:
GULDNER Y
BERROIR JM
VIEREN JP
VOOS M
SAGNES I
BADOZ PA
WARREN P
DUTARTRE D
Citation: Y. Guldner et al., MAGNETOTRANSPORT AND MICROWAVE PHOTORESISTIVITY OF 2-DIMENSIONAL HOLEGASES IN SI-SI(1-X)GE(X) HETEROSTRUCTURES, Solid-state electronics, 37(4-6), 1994, pp. 953-956
Authors:
DUTARTRE D
WARREN P
CHOLLET F
GISBERT F
BERENGUER M
BERBEZIER I
Citation: D. Dutartre et al., DEFECT-FREE STRANSKI-KRASTANOV GROWTH OF STRAINED SI1-XGEX LAYERS ON SI, Journal of crystal growth, 142(1-2), 1994, pp. 78-86
Authors:
JEANJEAN P
SICART J
ROBERT JL
DUTARTRE D
CONEDERA V
Citation: P. Jeanjean et al., ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF BORON-IMPLANTED ZMR-SOI FILMS, Sensors and actuators. A, Physical, 36(3), 1993, pp. 241-245
Authors:
AUBRY V
MEYER F
LAVAL R
CLERC C
WARREN P
DUTARTRE D
Citation: V. Aubry et al., THERMAL-STABILITY OF W ON RTCVD SI1-XGEX FILMS, Applied surface science, 73, 1993, pp. 285-289
Authors:
GULDNER Y
BERROIR JM
VIEREN JP
VOOS M
SAGNES I
BADOZ PA
WARREN P
DUTARTRE D
Citation: Y. Guldner et al., INVESTIGATION OF 2-DIMENSIONAL HOLE GASES IN SI SIGE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 48(16), 1993, pp. 12312-12315
Authors:
AUBRY V
MEYER F
WARREN P
DUTARTRE D
Citation: V. Aubry et al., SCHOTTKY-BARRIER HEIGHTS OF W ON SI1-XGEX ALLOYS, Applied physics letters, 63(18), 1993, pp. 2520-2522
Authors:
SOUIFI A
BREMOND G
BENYATTOU T
GUILLOT G
DUTARTRE D
WARREN P
Citation: A. Souifi et al., BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI, Applied physics letters, 62(23), 1993, pp. 2986-2988
Risultati:
1-18
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