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Results: 1-13 |
Results: 13
SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY
Authors: DETCHEVERRY C ECOFFET R DUZELLIER S LORFEVRE E BRUGUIER G BARAK J LIFSHITZ Y PALAU JM GASIOT J
Citation: C. Detcheverry et al., SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1612-1616
LOW LET CROSS-SECTION MEASUREMENTS USING HIGH-ENERGY CARBON BEAM
Authors: ECOFFET R DUZELLIER S FALGUERE D GUIBERT L INGUIMBERT C
Citation: R. Ecoffet et al., LOW LET CROSS-SECTION MEASUREMENTS USING HIGH-ENERGY CARBON BEAM, IEEE transactions on nuclear science, 44(6), 1997, pp. 2230-2236
PROTON UPSET RATE SIMULATION BY A MONTE-CARLO METHOD - IMPORTANCE OF THE ELASTIC-SCATTERING MECHANISM
Authors: INGUIMBERT C DUZELLIER S ECOFFET R BOURRIEAU J
Citation: C. Inguimbert et al., PROTON UPSET RATE SIMULATION BY A MONTE-CARLO METHOD - IMPORTANCE OF THE ELASTIC-SCATTERING MECHANISM, IEEE transactions on nuclear science, 44(6), 1997, pp. 2243-2249
LOW-ENERGY PROTON-INDUCED SEE IN MEMORIES
Authors: DUZELLIER S ECOFFET R FALGUERE D NUNS T GUIBERT L HAJDAS W CALVET MC
Citation: S. Duzellier et al., LOW-ENERGY PROTON-INDUCED SEE IN MEMORIES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2306-2310
ESTIMATION OF LATCH-UP SENSITIVE THICKNESS AND CRITICAL ENERGY USING LARGE INCLINATION HEAVY-ION BEAMS
Authors: ECOFFET R DUZELLIER S
Citation: R. Ecoffet et S. Duzellier, ESTIMATION OF LATCH-UP SENSITIVE THICKNESS AND CRITICAL ENERGY USING LARGE INCLINATION HEAVY-ION BEAMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2378-2385
AN EMPIRICAL-MODEL FOR PREDICTING PROTON-INDUCED UPSET
Authors: CALVEL P BARILLOT C LAMOTHE P ECOFFET R DUZELLIER S FALGUERE D
Citation: P. Calvel et al., AN EMPIRICAL-MODEL FOR PREDICTING PROTON-INDUCED UPSET, IEEE transactions on nuclear science, 43(6), 1996, pp. 2827-2832
RECENT TRENDS IN SINGLE-EVENT EFFECT GROUND TESTING
Authors: DUZELLIER S ECOFFET R
Citation: S. Duzellier et R. Ecoffet, RECENT TRENDS IN SINGLE-EVENT EFFECT GROUND TESTING, IEEE transactions on nuclear science, 43(2), 1996, pp. 671-677
EVALUATION OF THE UPSET RISK IN CMOS SRAM THROUGH FULL 3-DIMENSIONAL SIMULATION
Authors: MOREAU Y DUZELLIER S GASIOT J
Citation: Y. Moreau et al., EVALUATION OF THE UPSET RISK IN CMOS SRAM THROUGH FULL 3-DIMENSIONAL SIMULATION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1789-1796
SEE RESULTS USING HIGH-ENERGY IONS
Authors: DUZELLIER S FALGUERE D MOULIERE L ECOFFET R BUISSON J
Citation: S. Duzellier et al., SEE RESULTS USING HIGH-ENERGY IONS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1797-1802
INFLUENCE OF SOLAR-CYCLE ON SPOT-1,-2,-3 UPSET RATES
Authors: ECOFFET R PRIEUR M DELCASTILLO MF DUZELLIER S FALGUERE D
Citation: R. Ecoffet et al., INFLUENCE OF SOLAR-CYCLE ON SPOT-1,-2,-3 UPSET RATES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1983-1987
2 CMOS MEMORY CELLS SUITABLE FOR THE DESIGN OF SEU-TOLERANT VLSI CIRCUITS
Authors: VELAZCO R BESSOT D DUZELLIER S ECOFFET R KOGA R
Citation: R. Velazco et al., 2 CMOS MEMORY CELLS SUITABLE FOR THE DESIGN OF SEU-TOLERANT VLSI CIRCUITS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2229-2234
SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS
Authors: CALVEL P LAMOTHE P BARILLOT C ECOFFET R DUZELLIER S STASSINOPOULOS EG
Citation: P. Calvel et al., SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2267-2271
SEE IN-FLIGHT MEASUREMENT AN THE MIR ORBITAL STATION
Authors: FALGUERE D DUZELLIER S ECOFFET R
Citation: D. Falguere et al., SEE IN-FLIGHT MEASUREMENT AN THE MIR ORBITAL STATION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2346-2352
Risultati: 1-13 |