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Results: 1-25/34
Authors:
Damilano, B
Grandjean, N
Pernot, C
Massies, J
Citation: B. Damilano et al., Monolithic white light emitting diodes based on InGaN/GaN multiple-quantumwells, JPN J A P 2, 40(9AB), 2001, pp. L918-L920
Authors:
Grandjean, N
Damilano, B
Massies, J
Citation: N. Grandjean et al., Group-III nitride quantum heterostructures grown by molecular beam epitaxy, J PHYS-COND, 13(32), 2001, pp. 6945-6960
Authors:
Reverchon, JL
Huet, F
Poisson, MA
Duboz, JY
Damilano, B
Grandjean, N
Massies, J
Citation: Jl. Reverchon et al., Photoconductance measurements and Stokes shift in InGaN alloys, MAT SCI E B, 82(1-3), 2001, pp. 197-199
Authors:
Damilano, B
Grandjean, N
Massies, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum, MAT SCI E B, 82(1-3), 2001, pp. 224-226
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE, MAT SCI E B, 82(1-3), 2001, pp. 256-258
Authors:
Lefebvre, P
Taliercio, T
Kalliakos, S
Morel, A
Zhang, XB
Gallart, M
Bretagnon, T
Gil, B
Grandjean, N
Damilano, B
Massies, J
Citation: P. Lefebvre et al., Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect, PHYS ST S-B, 228(1), 2001, pp. 65-72
Authors:
White, ME
O'Donnell, KP
Martin, RW
Deatcher, CJ
Damilano, B
Grandjean, N
Massies, J
Citation: Me. White et al., Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wellsand quantum boxes, PHYS ST S-B, 228(1), 2001, pp. 129-132
Authors:
Gucciardi, PG
Vinattieri, A
Colocci, M
Damilano, B
Grandjean, N
Semond, F
Massies, J
Citation: Pg. Gucciardi et al., Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots, PHYS ST S-B, 224(1), 2001, pp. 53-56
Authors:
Perlin, P
Gorczyca, I
Suski, T
Wisniewski, P
Lepkowski, S
Christensen, NE
Svane, A
Hansen, M
DenBaars, SP
Damilano, B
Grandjean, N
Massies, J
Citation: P. Perlin et al., Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319, PHYS REV B, 6411(11), 2001, pp. 5319
Authors:
Gallart, M
Lefebvre, P
Morel, A
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: M. Gallart et al., Reduction of carrier in-plane mobility in group-III nitride based quantum wells: The role of internal electric fields, PHYS ST S-A, 183(1), 2001, pp. 61-66
Authors:
Siozade, L
Disseix, P
Vasson, A
Leymarie, J
Damilano, B
Grandjean, N
Massies, J
Citation: L. Siozade et al., Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy, PHYS ST S-A, 183(1), 2001, pp. 139-143
Authors:
Gucciardi, PG
Vinattieri, A
Colocci, M
Damilano, B
Grandjean, N
Semond, F
Massies, I
Citation: Pg. Gucciardi et al., Photoluminescence properties of multiple stacked planes of GaN/AlN quantumdots studied by near-field optical microscopy, J MICROSC O, 202, 2001, pp. 212-217
Authors:
Damilano, B
Grandjean, N
Vezian, S
Massies, J
Citation: B. Damilano et al., InGaN heterostructures grown by molecular beam epitaxy: from growth mechanism to optical properties, J CRYST GR, 227, 2001, pp. 466-470
Authors:
Gleize, J
Demangeot, F
Frandon, J
Renucci, MA
Kuball, M
Damilano, B
Grandjean, N
Massies, J
Citation: J. Gleize et al., Direct signature of strained GaN quantum dots by Raman scattering, APPL PHYS L, 79(5), 2001, pp. 686-688
Authors:
Lefebvre, P
Morel, A
Gallart, M
Taliercio, T
Allegre, J
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy, APPL PHYS L, 78(9), 2001, pp. 1252-1254
Authors:
Lefebvre, P
Taliercio, T
Morel, A
Allegre, J
Gallart, M
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes, APPL PHYS L, 78(11), 2001, pp. 1538-1540
Authors:
Damilano, B
Grandjean, N
Massies, J
Semond, F
Citation: B. Damilano et al., GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range, APPL SURF S, 164, 2000, pp. 241-245
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization, THIN SOL FI, 380(1-2), 2000, pp. 195-197
Authors:
Karpov, SY
Talalaev, RA
Makarov, YN
Grandjean, N
Massies, J
Damilano, B
Citation: Sy. Karpov et al., Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy, SURF SCI, 450(3), 2000, pp. 191-203
Authors:
Grandjean, N
Damilano, B
Massies, J
Dalmasso, S
Citation: N. Grandjean et al., Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots, SOL ST COMM, 113(9), 2000, pp. 495-498
Authors:
Damilano, B
Grandjean, N
Massies, J
Dalmasso, S
Reverchon, JL
Calligaro, M
Duboz, JY
Siozade, L
Leymarie, J
Citation: B. Damilano et al., Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 363-368
Authors:
Morel, A
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: A. Morel et al., Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots, PHYS ST S-A, 180(1), 2000, pp. 375-380
Authors:
Grandjean, N
Damilano, B
Massies, J
Neu, G
Teissere, M
Grzegory, I
Porowski, S
Gallart, M
Lefebvre, P
Gil, B
Albrecht, M
Citation: N. Grandjean et al., Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate, J APPL PHYS, 88(1), 2000, pp. 183-187
Authors:
Damilano, B
Grandjean, N
Massies, J
Siozade, L
Leymarie, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blueto red at 300 K, APPL PHYS L, 77(9), 2000, pp. 1268-1270
Authors:
Gleize, J
Frandon, J
Demangeot, F
Renucci, MA
Adelmann, C
Daudin, B
Feuillet, G
Damilano, B
Grandjean, N
Massies, J
Citation: J. Gleize et al., Signature of GaN-AlN quantum dots by nonresonant Raman scattering, APPL PHYS L, 77(14), 2000, pp. 2174-2176