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Davis, RF
Gehrke, T
Linthicum, KJ
Rajagopal, P
Roskowski, AM
Zheleva, T
Preble, EA
Zorman, CA
Mehregany, M
Schwarz, U
Schuck, J
Grober, R
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Citation: Pj. Neale et al., Effects of UV on photosynthesis of Antarctic phytoplankton: models and their application to coastal and pelagic assemblages, REV CHIL HN, 74(2), 2001, pp. 283-292
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates, Z METALLKUN, 92(2), 2001, pp. 163-166
Authors:
McGinnis, AJ
Thomson, D
Davis, RF
Chen, E
Michel, A
Lamb, HH
Citation: Aj. Mcginnis et al., Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams, SURF SCI, 494(1), 2001, pp. 28-42
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Preble, E
Rajagopal, P
Ronning, C
Zorman, C
Mehregany, M
Citation: Rf. Davis et al., Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates, J CRYST GR, 231(3), 2001, pp. 335-341
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Preble, EA
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization, J CRYST GR, 225(2-4), 2001, pp. 134-140
Citation: Ts. Zheleva et al., Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures, J CRYST GR, 222(4), 2001, pp. 706-718
Authors:
Jia, L
Yu, ET
Keogh, D
Asbeck, PM
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Roskowski, A
Davis, RF
Citation: L. Jia et al., Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures, APPL PHYS L, 79(18), 2001, pp. 2916-2918
Authors:
Pozina, G
Edwards, NV
Bergman, JP
Paskova, T
Monemar, B
Bremser, MD
Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Citation: Cw. Teng et al., Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers, APPL PHYS L, 78(12), 2001, pp. 1688-1690
Authors:
Hanser, AD
Banks, AD
Davis, RF
Jahnen, B
Albrecht, M
Dorsch, W
Christiansen, S
Strunk, HP
Citation: Ad. Hanser et al., Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy, MAT SC S PR, 3(3), 2000, pp. 163-171
Authors:
Davis, RF
Gehrke, T
Linthicum, KJ
Zheleva, TS
Rajagopal, P
Zorman, CA
Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates, MRS I J N S, 5, 2000, pp. NIL_46-NIL_57
Authors:
Gehrke, T
Linthicum, KJ
Rajagopal, P
Preble, EA
Davis, RF
Citation: T. Gehrke et al., Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition, MRS I J N S, 5, 2000, pp. NIL_64-NIL_69
Authors:
Michel, A
Hanser, D
Davis, RF
Qiao, D
Lau, SS
Yu, LS
Sun, W
Asbeck, P
Citation: A. Michel et al., Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures, MRS I J N S, 5, 2000, pp. NIL_520-NIL_525
Authors:
Smith, SA
Lampert, WV
Rajagopal, P
Banks, AD
Thomson, D
Davis, RF
Citation: Sa. Smith et al., Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry, J VAC SCI A, 18(3), 2000, pp. 879-881
Authors:
Browman, HI
Rodriguez, CA
Beland, F
Cullen, JJ
Davis, RF
Kouwenberg, JHM
Kuhn, PS
McArthur, B
Runge, JA
St-Pierre, JF
Vetter, RD
Citation: Hi. Browman et al., Impact of ultraviolet radiation on marine crustacean zooplankton and ichthyoplankton: a synthesis of results from the estuary and Gulf of St. Lawrence, Canada, MAR ECOL-PR, 199, 2000, pp. 293-311