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Authors: Davis, RF Gehrke, T Linthicum, KJ Rajagopal, P Roskowski, AM Zheleva, T Preble, EA Zorman, CA Mehregany, M Schwarz, U Schuck, J Grober, R
Citation: Rf. Davis et al., Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates, MRS I J N S, 6(14), 2001, pp. 1-16

Authors: Neale, PJ Fritz, JJ Davis, RF
Citation: Pj. Neale et al., Effects of UV on photosynthesis of Antarctic phytoplankton: models and their application to coastal and pelagic assemblages, REV CHIL HN, 74(2), 2001, pp. 283-292

Authors: Ronning, C Carlson, EP Davis, RF
Citation: C. Ronning et al., Ion implantation into gallium nitride, PHYS REPORT, 351(5), 2001, pp. 349-385

Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates, Z METALLKUN, 92(2), 2001, pp. 163-166

Authors: McGinnis, AJ Thomson, D Davis, RF Chen, E Michel, A Lamb, HH
Citation: Aj. Mcginnis et al., Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams, SURF SCI, 494(1), 2001, pp. 28-42

Authors: Pozina, G Edwards, NV Bergman, JP Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155

Authors: Davis, RF Gehrke, T Linthicum, KJ Preble, E Rajagopal, P Ronning, C Zorman, C Mehregany, M
Citation: Rf. Davis et al., Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates, J CRYST GR, 231(3), 2001, pp. 335-341

Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Preble, EA Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization, J CRYST GR, 225(2-4), 2001, pp. 134-140

Authors: Zheleva, TS Nam, OH Ashmawi, WM Griffin, JD Davis, RF
Citation: Ts. Zheleva et al., Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures, J CRYST GR, 222(4), 2001, pp. 706-718

Authors: McGinnis, AJ Thomson, D Davis, RF Chen, E Michel, A Lamb, HH
Citation: Aj. Mcginnis et al., In situ cleaning of GaN/6H-SiC substrates in NH3, J CRYST GR, 222(3), 2001, pp. 452-458

Authors: Platow, W Nemanich, RJ Sayers, DE Hartman, JD Davis, RF
Citation: W. Platow et al., Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si), J APPL PHYS, 90(12), 2001, pp. 5924-5927

Authors: Chang, YC Oberhofer, AE Muth, JF Kolbas, RM Davis, RF
Citation: Yc. Chang et al., Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN, APPL PHYS L, 79(3), 2001, pp. 281-283

Authors: Jia, L Yu, ET Keogh, D Asbeck, PM Miraglia, P Roskowski, A Davis, RF
Citation: L. Jia et al., Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures, APPL PHYS L, 79(18), 2001, pp. 2916-2918

Authors: Pozina, G Edwards, NV Bergman, JP Paskova, T Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064

Authors: Teng, CW Aboelfotoh, MO Davis, RF Muth, JF Kolbas, RM
Citation: Cw. Teng et al., Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers, APPL PHYS L, 78(12), 2001, pp. 1688-1690

Authors: Hanser, AD Banks, AD Davis, RF Jahnen, B Albrecht, M Dorsch, W Christiansen, S Strunk, HP
Citation: Ad. Hanser et al., Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy, MAT SC S PR, 3(3), 2000, pp. 163-171

Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates, MRS I J N S, 5, 2000, pp. NIL_46-NIL_57

Authors: Gehrke, T Linthicum, KJ Rajagopal, P Preble, EA Davis, RF
Citation: T. Gehrke et al., Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition, MRS I J N S, 5, 2000, pp. NIL_64-NIL_69

Authors: Kaminska, E Piotrowska, A Barcz, A Jasinski, J Zielinski, M Golaszewska, K Davis, RF Goldys, E Tomsia, K
Citation: E. Kaminska et al., Zirconium mediated hydrogen outdiffusion from p-GaN, MRS I J N S, 5, 2000, pp. NIL_491-NIL_496

Authors: Michel, A Hanser, D Davis, RF Qiao, D Lau, SS Yu, LS Sun, W Asbeck, P
Citation: A. Michel et al., Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures, MRS I J N S, 5, 2000, pp. NIL_520-NIL_525

Authors: Ronning, C Hofsass, H Stotzler, A Deicher, M Carlson, EP Hartlieb, PJ Gehrke, T Rajagopal, P Davis, RF
Citation: C. Ronning et al., Photoluminescence characterization of Mg implanted GaN, MRS I J N S, 5, 2000, pp. NIL_622-NIL_628

Authors: Ward, BL Hartman, JD Hurt, EH Tracy, KM Davis, RF Nemanich, RJ
Citation: Bl. Ward et al., Schottky barrier height and electron affinity of titanium on AIN, J VAC SCI B, 18(4), 2000, pp. 2082-2087

Authors: Smith, SA Lampert, WV Rajagopal, P Banks, AD Thomson, D Davis, RF
Citation: Sa. Smith et al., Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry, J VAC SCI A, 18(3), 2000, pp. 879-881

Authors: Gehrke, T Linthicum, KJ Preble, E Rajagopal, P Ronning, C Zorman, C Mehregany, M Davis, RF
Citation: T. Gehrke et al., Pendeo-epitaxial growth of gallium nitride on silicon substrates, J ELEC MAT, 29(3), 2000, pp. 306-310

Authors: Browman, HI Rodriguez, CA Beland, F Cullen, JJ Davis, RF Kouwenberg, JHM Kuhn, PS McArthur, B Runge, JA St-Pierre, JF Vetter, RD
Citation: Hi. Browman et al., Impact of ultraviolet radiation on marine crustacean zooplankton and ichthyoplankton: a synthesis of results from the estuary and Gulf of St. Lawrence, Canada, MAR ECOL-PR, 199, 2000, pp. 293-311
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