ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures

Authors: De Salvo, B Ghibaudo, G Luthereau, P Baron, T Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures, SOL ST ELEC, 45(8), 2001, pp. 1513-1519

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Masson, P Baron, T Buffet, N Fernandes, A Guillaumot, B

Citation: B. De Salvo et al., Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices, IEEE DEVICE, 48(8), 2001, pp. 1789-1799

Investigation of charging/discharging phenomena in nano-crystal memories

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Baron, T

Citation: B. De Salvo et al., Investigation of charging/discharging phenomena in nano-crystal memories, SUPERLATT M, 28(5-6), 2000, pp. 339-344

A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current, SOL ST ELEC, 44(6), 2000, pp. 895-903

Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals

Authors: De Salvo, B Luthereau, P Baron, T Ghibaudo, G Martin, F Fraboulet, D Reimbold, G Gautier, J

Citation: B. De Salvo et al., Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals, MICROEL REL, 40(4-5), 2000, pp. 863-866

A new extrapolation law for data-retention time-to-failure of nonvolatile memories

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Candelier, P Reimbold, G

Citation: B. De Salvo et al., A new extrapolation law for data-retention time-to-failure of nonvolatile memories, IEEE ELEC D, 20(5), 1999, pp. 197-199

Study of Stress Induced Leakage Current by using high resolution measurements

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., Study of Stress Induced Leakage Current by using high resolution measurements, MICROEL REL, 39(6-7), 1999, pp. 797-802

On the correlation between SILC and hole fluence throughout the oxide

Authors: Scarpa, A De Salvo, B Ghibaudo, G Pananakakis, G Paccagnella, A Ghidini, G

Citation: A. Scarpa et al., On the correlation between SILC and hole fluence throughout the oxide, MICROEL REL, 39(2), 1999, pp. 197-201

ONO and NO interpoly dielectric conduction mechanisms

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G

Citation: B. De Salvo et al., ONO and NO interpoly dielectric conduction mechanisms, MICROEL REL, 39(2), 1999, pp. 235-239

Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique

Authors: De Salvo, B Ghibaudo, C Pananakakis, G Guillaumot, B

Citation: B. De Salvo et al., Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique, J NON-CRYST, 245, 1999, pp. 104-109

Charge transport in thin interpoly nitride/oxide stacked films

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., Charge transport in thin interpoly nitride/oxide stacked films, J APPL PHYS, 86(5), 1999, pp. 2751-2758

Experimental and theoretical investigation of nonvolatile memory data-retention

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G Mondond, F Guillaumot, B Candelier, P

Citation: B. De Salvo et al., Experimental and theoretical investigation of nonvolatile memory data-retention, IEEE DEVICE, 46(7), 1999, pp. 1518-1524

Risultati: 1-12 |