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Results: 1-21 |
Results: 21
Effect of stress on impurity-free quantum well intermixing
Authors: Deenapanray, PNK Jagadish, C
Citation: Pnk. Deenapanray et C. Jagadish, Effect of stress on impurity-free quantum well intermixing, EL SOLID ST, 4(2), 2001, pp. G11-G13
Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping:Effect of nitrous oxide flow rate
Authors: Deenapanray, PNK Jagadish, C
Citation: Pnk. Deenapanray et C. Jagadish, Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping:Effect of nitrous oxide flow rate, J VAC SCI B, 19(5), 2001, pp. 1962-1966
Low energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Low energy O-2(+) and N-2(+) beam-induced profile broadening effects in Si, J VAC SCI A, 19(3), 2001, pp. 893-898
Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers
Authors: Deenapanray, PNK Martin, A Jagadish, C
Citation: Pnk. Deenapanray et al., Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers, APPL PHYS L, 79(16), 2001, pp. 2561-2563
Electrical transients in the ion-beam-induced nitridation of silicon
Authors: Petravic, M Deenapanray, PNK
Citation: M. Petravic et Pnk. Deenapanray, Electrical transients in the ion-beam-induced nitridation of silicon, APPL PHYS L, 78(22), 2001, pp. 3445-3447
Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing
Authors: Deenapanray, PNK Tan, HH Fu, L Jagadish, C
Citation: Pnk. Deenapanray et al., Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing, EL SOLID ST, 3(4), 2000, pp. 196-199
On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment, SURF INT AN, 29(2), 2000, pp. 160-167
Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells
Authors: Deenapanray, PNK Fu, L Petravic, M Jagadish, C Gong, B Lamb, RN
Citation: Pnk. Deenapanray et al., Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells, SURF INT AN, 29(11), 2000, pp. 754-760
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Authors: Petravic, M Deenapanray, PNK Comtet, G Hellner, L Dujardin, G Usher, BF
Citation: M. Petravic et al., Selective photon-stimulated desorption of hydrogen from GaAs surfaces, PHYS REV L, 84(10), 2000, pp. 2255-2258
Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers
Authors: Deenapanray, PNK Tan, HH Jagadish, C Auret, FD
Citation: Pnk. Deenapanray et al., Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers, J APPL PHYS, 88(9), 2000, pp. 5255-5261
Segregation effects of Li, K, and F in Si during depth profiling by oxygenions
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Segregation effects of Li, K, and F in Si during depth profiling by oxygenions, J APPL PHYS, 87(5), 2000, pp. 2178-2184
Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells
Authors: Deenapanray, PNK Tan, HH Cohen, MI Gaff, K Petravic, M Jagadish, C
Citation: Pnk. Deenapanray et al., Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells, J ELCHEM SO, 147(5), 2000, pp. 1950-1956
Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition
Authors: Deenapanray, PNK Tan, HH Jagadish, C Auret, FD
Citation: Pnk. Deenapanray et al., Investigation of deep levels in rapid thermally annealed SiO2-capped n-GaAs grown by metal-organic chemical vapor deposition, APPL PHYS L, 77(5), 2000, pp. 696-698
Quality of silica capping layer and its influence on quantum-well intermixing
Authors: Fu, L Deenapanray, PNK Tan, HH Jagadish, C Dao, LV Gal, M
Citation: L. Fu et al., Quality of silica capping layer and its influence on quantum-well intermixing, APPL PHYS L, 76(7), 2000, pp. 837-839
Electric-field-enhanced emission and annealing behaviour of electron trapsintroduced in n-Si by low-energy He ion bombardment
Authors: Deenapanray, PNK Meyer, WE Auret, FD
Citation: Pnk. Deenapanray et al., Electric-field-enhanced emission and annealing behaviour of electron trapsintroduced in n-Si by low-energy He ion bombardment, SEMIC SCI T, 14(1), 1999, pp. 41-47
Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma
Authors: Deenapanray, PNK Auret, FD Myburg, G
Citation: Pnk. Deenapanray et al., Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma, NUCL INST B, 148(1-4), 1999, pp. 300-305
Deep level properties of erbium implanted epitaxially grown SiGe
Authors: Mamor, M Auret, FD Goodman, SA Brink, J Hayes, M Meyer, F Vantomme, A Langouche, G Deenapanray, PNK
Citation: M. Mamor et al., Deep level properties of erbium implanted epitaxially grown SiGe, NUCL INST B, 148(1-4), 1999, pp. 523-527
The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation
Authors: Li, ZL Wong-Leung, J Deenapanray, PNK Conway, M Chivers, DJ FitzGerald, JD Williams, JS
Citation: Zl. Li et al., The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation, NUCL INST B, 148(1-4), 1999, pp. 534-539
Angular and energy dependence of the ion beam oxidation of Si using oxygenions from a duoplasmatron source
Authors: Deenapanray, PNK Petravic, M
Citation: Pnk. Deenapanray et M. Petravic, Angular and energy dependence of the ion beam oxidation of Si using oxygenions from a duoplasmatron source, SURF INT AN, 27(2), 1999, pp. 92-97
The role of oxygen on the stability of gettering of metals to cavities in silicon
Authors: Williams, JS Conway, MJ Wong-Leung, J Deenapanray, PNK Petravic, M Brown, RA Eaglesham, DJ Jacobson, DC
Citation: Js. Williams et al., The role of oxygen on the stability of gettering of metals to cavities in silicon, APPL PHYS L, 75(16), 1999, pp. 2424-2426
On the nitridation of silicon by low energy nitrogen bombardment
Authors: Petravic, M Williams, JS Conway, M Deenapanray, PNK
Citation: M. Petravic et al., On the nitridation of silicon by low energy nitrogen bombardment, APPL PHYS L, 73(9), 1998, pp. 1287-1289
Risultati: 1-21 |