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Results: 1-25 | 26-27
Results: 1-25/27
Relation between hole traps and non-reactive hydrogen-induced positive charges
Authors: Zhang, JF Zhao, CZ Groeseneken, G Degraeve, R Ellis, JN Beech, CD
Citation: Jf. Zhang et al., Relation between hole traps and non-reactive hydrogen-induced positive charges, MICROEL ENG, 59(1-4), 2001, pp. 67-72
On the mechanism of electron trap generation in gate oxides
Authors: Zhang, WD Zhang, JF Lalor, M Burton, D Groeseneken, G Degraeve, R
Citation: Wd. Zhang et al., On the mechanism of electron trap generation in gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 89-94
Dependence of energy distributions of interface states on stress conditions
Authors: Zhang, WD Zhang, JF Uren, MJ Groeseneken, G Degraeve, R Lalor, M Burton, D
Citation: Wd. Zhang et al., Dependence of energy distributions of interface states on stress conditions, MICROEL ENG, 59(1-4), 2001, pp. 95-99
Explanation of nMOSFET substrate current after hard gate oxide breakdown
Authors: Kaczer, B Degraeve, R De Keersgieter, A Rasras, M Groeseneken, G
Citation: B. Kaczer et al., Explanation of nMOSFET substrate current after hard gate oxide breakdown, MICROEL ENG, 59(1-4), 2001, pp. 155-160
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
Authors: Green, ML Gusev, EP Degraeve, R Garfunkel, EL
Citation: Ml. Green et al., Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits, J APPL PHYS, 90(5), 2001, pp. 2057-2121
Hydrogen induced positive charge generation in gate oxides
Authors: Zhang, JF Zhao, CZ Groeseneken, G Degraeve, R Ellis, JN Beech, CD
Citation: Jf. Zhang et al., Hydrogen induced positive charge generation in gate oxides, J APPL PHYS, 90(4), 2001, pp. 1911-1919
Interface state generation after hole injection
Authors: Zhao, CZ Zhang, JF Groeseneken, G Degraeve, R Ellis, JN Beech, CD
Citation: Cz. Zhao et al., Interface state generation after hole injection, J APPL PHYS, 90(1), 2001, pp. 328-336
Degradation and time dependent breakdown of stressed ferromagnetic tunnel junctions
Authors: Das, J Degraeve, R Boeve, H Duchamps, P Lagae, L Groeseneken, G Borghs, G De Boeck, J
Citation: J. Das et al., Degradation and time dependent breakdown of stressed ferromagnetic tunnel junctions, J APPL PHYS, 89(11), 2001, pp. 7350-7352
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
Authors: Crupi, F Iannaccone, G Crupi, I Degraeve, R Groeseneken, G Maes, HE
Citation: F. Crupi et al., Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current, IEEE DEVICE, 48(6), 2001, pp. 1109-1113
Hole trapping and trap generation in the gate silicon dioxide
Authors: Zhang, JF Sii, HK Groeseneken, G Degraeve, R
Citation: Jf. Zhang et al., Hole trapping and trap generation in the gate silicon dioxide, IEEE DEVICE, 48(6), 2001, pp. 1127-1135
Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides
Authors: Rasras, M De Wolf, I Groeseneken, G Kaczer, B Degraeve, R Maes, HE
Citation: M. Rasras et al., Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides, IEEE DEVICE, 48(2), 2001, pp. 231-238
Tunnel barrier properties of stressed ferromagnetic tunnel junctions
Authors: Das, J Degraeve, R Boeve, H Duchamps, P Lagae, L Groeseneken, G Borghs, G De Boeck, J
Citation: J. Das et al., Tunnel barrier properties of stressed ferromagnetic tunnel junctions, ELECTR LETT, 37(6), 2001, pp. 356-358
Generation of mobile hydrogenous ions in gate oxide and their potential applications
Authors: Zhao, CZ Zhang, JF Groeseneken, G Degraeve, R Ellis, JN Beech, CD
Citation: Cz. Zhao et al., Generation of mobile hydrogenous ions in gate oxide and their potential applications, ELECTR LETT, 37(11), 2001, pp. 716-717
On the interface states generated under different stress conditions
Authors: Zhang, WD Zhang, JF Uren, MJ Groeseneken, G Degraeve, R Lalor, M Burton, D
Citation: Wd. Zhang et al., On the interface states generated under different stress conditions, APPL PHYS L, 79(19), 2001, pp. 3092-3094
Special issue on scaling limits of gate oxides - Foreword
Authors: Degraeve, R
Citation: R. Degraeve, Special issue on scaling limits of gate oxides - Foreword, SEMIC SCI T, 15(5), 2000, pp. NIL_3-NIL_3
Reliability: a possible showstopper for oxide thickness scaling?
Authors: Degraeve, R Kaczer, B Groeseneken, G
Citation: R. Degraeve et al., Reliability: a possible showstopper for oxide thickness scaling?, SEMIC SCI T, 15(5), 2000, pp. 436-444
Ultra-thin oxide reliability: searching for the thickness scaling limit
Authors: Degraeve, R Kaczer, B Groeseneken, G
Citation: R. Degraeve et al., Ultra-thin oxide reliability: searching for the thickness scaling limit, MICROEL REL, 40(4-5), 2000, pp. 697-701
Mechanism for the generation of interface state precursors
Authors: Zhang, JF Sii, HK Degraeve, R Groeseneken, G
Citation: Jf. Zhang et al., Mechanism for the generation of interface state precursors, J APPL PHYS, 87(6), 2000, pp. 2967-2977
The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films
Authors: Kaczer, B Degraeve, R Pangon, N Groeseneken, G
Citation: B. Kaczer et al., The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films, IEEE DEVICE, 47(7), 2000, pp. 1514-1521
Degradation of oxides and oxynitrides under hot hole stress
Authors: Zhang, JF Sii, HK Groeseneken, G Degraeve, R
Citation: Jf. Zhang et al., Degradation of oxides and oxynitrides under hot hole stress, IEEE DEVICE, 47(2), 2000, pp. 378-386
Investigation and comparison of the noise in the gate and substrate current after soft-breakdown
Authors: Crupi, F Degraeve, R Groeseneken, G Nigam, T Maes, H
Citation: F. Crupi et al., Investigation and comparison of the noise in the gate and substrate current after soft-breakdown, JPN J A P 1, 38(4B), 1999, pp. 2219-2222
Hot carrier degradation and time-dependent dielectric breakdown in oxides
Authors: Groeseneken, G Degraeve, R Nigam, T Van den Bosch, G Maes, HE
Citation: G. Groeseneken et al., Hot carrier degradation and time-dependent dielectric breakdown in oxides, MICROEL ENG, 49(1-2), 1999, pp. 27-40
Investigation of temperature acceleration of thin oxide time-to-breakdown
Authors: Kaczer, B Degraeve, R Pangon, N Nigam, T Groeseneken, G
Citation: B. Kaczer et al., Investigation of temperature acceleration of thin oxide time-to-breakdown, MICROEL ENG, 48(1-4), 1999, pp. 47-50
Relation between hydrogen and the generation of interface state precursors
Authors: Sii, HK Zhang, JF Degraeve, R Groeseneken, G
Citation: Hk. Sii et al., Relation between hydrogen and the generation of interface state precursors, MICROEL ENG, 48(1-4), 1999, pp. 135-138
Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
Authors: Degraeve, R Kaczer, B Groeseneken, G
Citation: R. Degraeve et al., Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction, MICROEL REL, 39(10), 1999, pp. 1445-1460
Risultati: 1-25 | 26-27