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Results: 51-75/113
Heavy doping effects in Mg-doped GaN
Authors: Kozodoy, P Xing, HL DenBaars, SP Mishra, UK Saxler, A Perrin, R Elhamri, S Mitchel, WC
Citation: P. Kozodoy et al., Heavy doping effects in Mg-doped GaN, J APPL PHYS, 87(4), 2000, pp. 1832-1835
Depletion region effects in Mg-doped GaN
Authors: Kozodoy, P DenBaars, SP Mishra, UK
Citation: P. Kozodoy et al., Depletion region effects in Mg-doped GaN, J APPL PHYS, 87(2), 2000, pp. 770-775
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS
Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Authors: Ibbetson, JP Fini, PT Ness, KD DenBaars, SP Speck, JS Mishra, UK
Citation: Jp. Ibbetson et al., Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, APPL PHYS L, 77(2), 2000, pp. 250-252
Dislocation reduction in GaN films through selective island growth of InGaN
Authors: Keller, S Parish, G Speck, JS DenBaars, SP Mishra, UK
Citation: S. Keller et al., Dislocation reduction in GaN films through selective island growth of InGaN, APPL PHYS L, 77(17), 2000, pp. 2665-2667
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Authors: Stonas, AR Kozodoy, P Marchand, H Fini, P DenBaars, SP Mishra, UK Hu, EL
Citation: Ar. Stonas et al., Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures, APPL PHYS L, 77(16), 2000, pp. 2610-2612
Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride
Authors: Sun, CK Chu, SW Tai, SP Keller, S Mishra, UK DenBaars, SP
Citation: Ck. Sun et al., Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride, APPL PHYS L, 77(15), 2000, pp. 2331-2333
Layer-by-layer growth of GaN induced by silicon
Authors: Munkholm, A Thompson, C Murty, MVR Eastman, JA Auciello, O Stephenson, GB Fini, P DenBaars, SP Speck, JS
Citation: A. Munkholm et al., Layer-by-layer growth of GaN induced by silicon, APPL PHYS L, 77(11), 2000, pp. 1626-1628
Hydrogen passivation of deep levels in n-GaN
Authors: Hierro, A Ringel, SA Hansen, M Speck, JS Mishra, UK DenBaars, SP
Citation: A. Hierro et al., Hydrogen passivation of deep levels in n-GaN, APPL PHYS L, 77(10), 2000, pp. 1499-1501
Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells
Authors: Ozgur, U Bergmann, MJ Casey, HC Everitt, HO Abare, AC Keller, S DenBaars, SP
Citation: U. Ozgur et al., Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells, APPL PHYS L, 77(1), 2000, pp. 109-111
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Improved characteristics of InGaN multiple-quantum-well laser diodes grownon laterally epitaxially overgrown GaN on sapphire
Authors: Hansen, M Fini, P Zhao, L Abare, AC Coldren, LA Speck, JS DenBaars, SP
Citation: M. Hansen et al., Improved characteristics of InGaN multiple-quantum-well laser diodes grownon laterally epitaxially overgrown GaN on sapphire, APPL PHYS L, 76(5), 2000, pp. 529-531
Two-photon absorption study of GaN
Authors: Sun, CK Liang, JC Wang, JC Kao, FJ Keller, S Mack, MP Mishra, U DenBaars, SP
Citation: Ck. Sun et al., Two-photon absorption study of GaN, APPL PHYS L, 76(4), 2000, pp. 439-441
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
Authors: Fini, P Munkholm, A Thompson, C Stephenson, GB Eastman, JA Murty, MVR Auciello, O Zhao, L DenBaars, SP Speck, JS
Citation: P. Fini et al., In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN, APPL PHYS L, 76(26), 2000, pp. 3893-3895
Optically and thermally detected deep levels in n-type Schottky and p(+)-nGaN diodes
Authors: Hierro, A Kwon, D Ringel, SA Hansen, M Speck, JS Mishra, UK DenBaars, SP
Citation: A. Hierro et al., Optically and thermally detected deep levels in n-type Schottky and p(+)-nGaN diodes, APPL PHYS L, 76(21), 2000, pp. 3064-3066
High voltage operation (> 80 V) of GaN bipolar junction transistors with low leakage
Authors: Limb, JB Xing, H Moran, B McCarthy, L DenBaars, SP Mishra, UK
Citation: Jb. Limb et al., High voltage operation (> 80 V) of GaN bipolar junction transistors with low leakage, APPL PHYS L, 76(17), 2000, pp. 2457-2459
Basics physics & materials technology of GaN LEDs and LDs
Authors: DenBaars, SP
Citation: Sp. Denbaars, Basics physics & materials technology of GaN LEDs and LDs, INTRODUCTION TO NITRIDE SEMICONDUCTOR BLUE LASERS AND LIGHT EMITTING DIODES, 2000, pp. 1-27
Improvement of internal quantum efficiency in 1.55 mu m laser diodes with InGaP electron stopper layer
Authors: Abraham, P Piprek, J DenBaars, SP Bowers, JE
Citation: P. Abraham et al., Improvement of internal quantum efficiency in 1.55 mu m laser diodes with InGaP electron stopper layer, JPN J A P 1, 38(2B), 1999, pp. 1239-1242
Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
Authors: Chen, CH Keller, S Haberer, ED Zhang, LD DenBaars, SP Hu, EL Mishra, UK Wu, YF
Citation: Ch. Chen et al., Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors, J VAC SCI B, 17(6), 1999, pp. 2755-2758
Scanning tunneling microscope-induced luminescence of GaN at threading dislocations
Authors: Evoy, S Craighead, HG Keller, S Mishra, UK DenBaars, SP
Citation: S. Evoy et al., Scanning tunneling microscope-induced luminescence of GaN at threading dislocations, J VAC SCI B, 17(1), 1999, pp. 29-32
Widely tunable sampled grating DBR laser with integrated electroabsorptionmodulator
Authors: Mason, B Fish, GA DenBaars, SP Coldren, LA
Citation: B. Mason et al., Widely tunable sampled grating DBR laser with integrated electroabsorptionmodulator, IEEE PHOTON, 11(6), 1999, pp. 638-640
Optical properties of InGaN quantum wells
Authors: Chichibu, SF Abare, AC Mack, MP Minsky, MS Deguchi, T Cohen, D Kozodoy, P Fleischer, SB Keller, S Speck, JS Bowers, JE Hu, E Mishra, UK Coldren, LA DenBaars, SP Wada, K Sota, T Nakamura, S
Citation: Sf. Chichibu et al., Optical properties of InGaN quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 298-306
Real-time X-ray scattering studies of surface structure during metalorganic: Chemical vapor deposition of GaN
Authors: Stephenson, GB Eastman, JA Auciello, O Munkholm, A Thompson, C Fuoss, PH Fini, P DenBaars, SP Speck, JS
Citation: Gb. Stephenson et al., Real-time X-ray scattering studies of surface structure during metalorganic: Chemical vapor deposition of GaN, MRS BULL, 24(1), 1999, pp. 21-25
AlGaN GaN heterojunction bipolar transistor
Authors: McCarthy, LS Kozodoy, P Rodwell, MJW DenBaars, SP Mishra, UK
Citation: Ls. Mccarthy et al., AlGaN GaN heterojunction bipolar transistor, IEEE ELEC D, 20(6), 1999, pp. 277-279
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