AAAAAA
Results:
1-13
|
Results: 13
Authors:
Ohta, T
Cicoira, F
Doppelt, P
Beitone, L
Hofmann, P
Citation: T. Ohta et al., Static vapor pressure measurement of low volatility precursors for molecular vapor deposition below ambient temperature, CHEM VAPOR, 7(1), 2001, pp. 33-37
Authors:
Chen, TY
Vaissermann, J
Ruiz, E
Senateur, JP
Doppelt, P
Citation: Ty. Chen et al., 2-methyl-1-hexen-3-yne Lewis base stabilized, beta-diketonate copper(I) complexes: X-ray structures, theoretical study, and low-temperature chemical vapor deposition of copper metal, CHEM MATER, 13(11), 2001, pp. 3993-4004
Authors:
Chen, TY
Vaissermann, J
Doppelt, P
Citation: Ty. Chen et al., Formation study and X-ray structures of dinuclear beta-diketonate copper(I) complexes with conjugated ene-yne Lewis base. Implications for the use of(hfac)Cu(MHY) as a precursor for copper CVD, INORG CHEM, 40(24), 2001, pp. 6167-6171
Authors:
Utke, I
Hoffmann, P
Dwir, B
Leifer, K
Kapon, E
Doppelt, P
Citation: I. Utke et al., Focused electron beam induced deposition of gold, J VAC SCI B, 18(6), 2000, pp. 3168-3171
Authors:
Marchi, F
Tonneau, D
Dallaporta, H
Safarov, V
Bouchiat, V
Doppelt, P
Even, R
Beitone, L
Citation: F. Marchi et al., Direct patterning of noble metal nanostructures with a scanning tunneling microscope, J VAC SCI B, 18(3), 2000, pp. 1171-1176
Authors:
Utke, T
Dwir, B
Leifer, K
Cicoira, F
Doppelt, P
Hoffmann, P
Kapon, E
Citation: T. Utke et al., Electron beam induced deposition of metallic tips and wires for microelectronics applications, MICROEL ENG, 53(1-4), 2000, pp. 261-264
Authors:
Marchi, F
Tonneau, D
Dallaporta, H
Pierrisnard, R
Bouchiat, V
Safarov, VI
Doppelt, P
Even, R
Citation: F. Marchi et al., Nanometer scale patterning by scanning tunelling microscope assisted chemical vapour deposition, MICROEL ENG, 50(1-4), 2000, pp. 59-65
Authors:
Doppelt, P
Combellas, C
Kanoufi, F
Chen, TY
Richardson, S
Thiebault, A
Citation: P. Doppelt et al., Single-step selective metallization of Mg/NH3 pretreated Teflon (R) by copper chemical vapor deposition, MICROEL ENG, 50(1-4), 2000, pp. 383-390
Authors:
Marchi, F
Tonneau, D
Pierrisnard, R
Bouchiat, V
Safarov, V
Dallaporta, H
Doppelt, P
Even, R
Citation: F. Marchi et al., Deposition of nanoscale rhodium dots by STM assisted CVD, J PHYS IV, 9(P8), 1999, pp. 733-739
Authors:
Vidal, S
Maury, F
Gleizes, A
Chen, TY
Doppelt, P
Citation: S. Vidal et al., Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursor, J PHYS IV, 9(P8), 1999, pp. 791-798
Authors:
Chen, TY
Combellas, C
Doppelt, P
Kanoufi, F
Thiebault, A
Citation: Ty. Chen et al., Selective metallization of Mg/NH3-treated Teflon by copper CVD, CHEM VAPOR, 5(4), 1999, pp. 185-190
Authors:
Marchi, F
Bouchiat, V
Dallaporta, H
Safarov, V
Tonneau, D
Doppelt, P
Citation: F. Marchi et al., Growth of silicon oxide on hydrogenated silicon during lithography with anatomic force microscope, J VAC SCI B, 16(6), 1998, pp. 2952-2956
Authors:
Doppelt, P
Citation: P. Doppelt, Why is coordination chemistry stretching the limits of micro-electronics technology?, COORD CH RE, 180, 1998, pp. 1785-1809
Risultati:
1-13
|