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Results: 1-11 |
Results: 11

Authors: Dugaev, VK Barnas, J
Citation: Vk. Dugaev et J. Barnas, Electron-electron interaction effects in magnetic layered structures, EUROPH LETT, 54(1), 2001, pp. 105-111

Authors: Dugaev, VK Bruno, P Barnas, J
Citation: Vk. Dugaev et al., Weak localization in ferromagnets with spin-orbit interaction - art. no. 144423, PHYS REV B, 6414(14), 2001, pp. 4423

Authors: Dugaev, VK Crepieux, A Bruno, P
Citation: Vk. Dugaev et al., Localization corrections to the anomalous Hall effect in a ferromagnet - art. no. 104411, PHYS REV B, 6410(10), 2001, pp. 4411

Authors: Litvinov, VI Dugaev, VK
Citation: Vi. Litvinov et Vk. Dugaev, Ferromagnetism in magnetically doped III-V semiconductors, PHYS REV L, 86(24), 2001, pp. 5593-5596

Authors: Dugaev, VK Litvinov, VI Dobrowolski, W Story, T
Citation: Vk. Dugaev et al., Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors, ACT PHY P A, 97(3), 2000, pp. 455-458

Authors: Dugaev, VK
Citation: Vk. Dugaev, Mechanism of bipolar diffusion of intercalated ions in layered crystals, PHYS ST S-B, 219(1), 2000, pp. 31-37

Authors: Dugaev, VK Litvinov, VI Dobrowolski, W
Citation: Vk. Dugaev et al., Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field, PHYS REV B, 62(3), 2000, pp. 1905-1911

Authors: Stolpe, I Puhlmann, N Portugall, O von Ortenberg, M Dobrowolski, W Sipatov, AY Dugaev, VK
Citation: I. Stolpe et al., Megagauss magnetospectroscopy of EuS/PbS multi-quantum wells, PHYS REV B, 62(24), 2000, pp. 16798-16801

Authors: Dugaev, VK
Citation: Vk. Dugaev, Mixed-valent states of rare-earth dopants in IV-VI semiconductors, INORG MATER, 36(5), 2000, pp. 524-526

Authors: Dugaev, VK Lityinov, VI Lusakowski, A
Citation: Vk. Dugaev et al., Mixed-valence states in narrow-gap IV-VI semiconductors with rare-earth ions, PHYS REV B, 59(23), 1999, pp. 15190-15196

Authors: Dugaev, VK Litvinov, VI Dobrowolski, W Story, T
Citation: Vk. Dugaev et al., Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors, SOL ST COMM, 110(6), 1999, pp. 351-355
Risultati: 1-11 |