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Results: 1-19 |
Results: 19
OXYGEN PROCESSING OF HG AND TL BASED CUPRATE SUPERCONDUCTORS
Authors: TIDROW SC PIERCE DM TAUBER A WILBER WD FINNEGAN RD ECKART DW
Citation: Sc. Tidrow et al., OXYGEN PROCESSING OF HG AND TL BASED CUPRATE SUPERCONDUCTORS, Journal of superconductivity, 11(1), 1998, pp. 29-33
AIN AS AN ENCAPSULATE FOR ANNEALING SIC
Authors: JONES KA XIE K ECKART DW WOOD MC TALYANSKY V VISPUTE RD VENKATESAN T WONGCHOTIGUL K SPENCER M
Citation: Ka. Jones et al., AIN AS AN ENCAPSULATE FOR ANNEALING SIC, Journal of applied physics, 83(12), 1998, pp. 8010-8015
DIELECTRIC-PROPERTIES OF PEROVSKITE ANTIMONATES
Authors: TIDROW SC TAUBER A WILBER WD FINNEGAN RD ECKART DW DRACH WC
Citation: Sc. Tidrow et al., DIELECTRIC-PROPERTIES OF PEROVSKITE ANTIMONATES, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 1769-1771
DRY-ETCHING OF INGAP IN MAGNETRON ENHANCED BCL3 PLASMAS
Authors: MCLANE GF WOOD MC ECKART DW LEE JW LEE KN PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., DRY-ETCHING OF INGAP IN MAGNETRON ENHANCED BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 622-625
COMPARISON OF PDGETIPT AND NIGEAU OHMIC CONTACTS TO N-GAAS AND PDGETIPT AND TIPD CONTACTS TO P(-GAAS())
Authors: JONES KA COLE MW HAN WY ECKART DW HILTON KP CROUCH MA HUGHES BH
Citation: Ka. Jones et al., COMPARISON OF PDGETIPT AND NIGEAU OHMIC CONTACTS TO N-GAAS AND PDGETIPT AND TIPD CONTACTS TO P(-GAAS()), Journal of applied physics, 82(4), 1997, pp. 1723-1729
MICROSTRUCTURES OF MERCURY-BASED CUPRATE THIN-FILMS
Authors: WU JZ YUN SH TIDROW SC ECKART DW
Citation: Jz. Wu et al., MICROSTRUCTURES OF MERCURY-BASED CUPRATE THIN-FILMS, Physica. C, Superconductivity, 271(1-2), 1996, pp. 1-5
MAGNETRON REACTIVE ION ETCHING OF GROUP III-NITRIDE TERNARY ALLOYS
Authors: MCLANE GF MONAHAN T ECKART DW PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GROUP III-NITRIDE TERNARY ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1046-1049
THE MECHANISMS OF FORMATION OF OHMIC CONTACTS TO ALGAAS - A MICROSTRUCTURAL, ELEMENTAL DIFFUSION AND ELECTRICAL INVESTIGATION
Authors: COLE MW HAN WY CASAS LM ECKART DW MONAHAN T JONES KA
Citation: Mw. Cole et al., THE MECHANISMS OF FORMATION OF OHMIC CONTACTS TO ALGAAS - A MICROSTRUCTURAL, ELEMENTAL DIFFUSION AND ELECTRICAL INVESTIGATION, Scanning, 18(5), 1996, pp. 379-384
THERMAL-STABILITY OF W OHMIC CONTACTS TO N-TYPE GAN
Authors: COLE MW ECKART DW HAN WY PFEFFER RL MONAHAN T REN F YUAN C STALL RA PEARTON SJ LI Y LU Y
Citation: Mw. Cole et al., THERMAL-STABILITY OF W OHMIC CONTACTS TO N-TYPE GAN, Journal of applied physics, 80(1), 1996, pp. 278-281
A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS
Authors: COLE MW HAN WY PFEFFER RL ECKART DW REN F HOBSON WS LOTHIAN JR LOPATA J CABALLERO JA PEARTON SJ
Citation: Mw. Cole et al., A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS, Journal of applied physics, 79(6), 1996, pp. 3286-3289
GROWTH OF HGBA2CA2CU3O8-FILMS ON LAALO3 SUBSTRATES USING FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING(DELTA THIN)
Authors: YUN SH WU JZ TIDROW SC ECKART DW
Citation: Sh. Yun et al., GROWTH OF HGBA2CA2CU3O8-FILMS ON LAALO3 SUBSTRATES USING FAST TEMPERATURE RAMPING HG-VAPOR ANNEALING(DELTA THIN), Applied physics letters, 68(18), 1996, pp. 2565-2567
OXYGEN DIFFUSION THROUGH DIELECTRICS - A CRITICAL PARAMETER IN HIGH CRITICAL-TEMPERATURE SUPERCONDUCTORS MULTILAYER TECHNOLOGY
Authors: TIDROW SC WILBER WD TAUBER A SCHAUER SN ECKART DW FINNEGAN RD PFEFFER RL
Citation: Sc. Tidrow et al., OXYGEN DIFFUSION THROUGH DIELECTRICS - A CRITICAL PARAMETER IN HIGH CRITICAL-TEMPERATURE SUPERCONDUCTORS MULTILAYER TECHNOLOGY, Journal of materials research, 10(7), 1995, pp. 1622-1634
MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS
Authors: MCLANE GF CASAS L LAREAU RT ECKART DW VARTULI CB PEARTON SJ ABERNATHY CR
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF ALN AND INN IN BCL3 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 724-726
METALLURGICAL INTERACTIONS AT THE CONTACTS GAAS INTERFACE
Authors: COLE MW HAN WY CASAS LM ECKART DW JONES KA
Citation: Mw. Cole et al., METALLURGICAL INTERACTIONS AT THE CONTACTS GAAS INTERFACE, Scanning, 17(1), 1995, pp. 51-56
PT TI/GE/PD OHMIC CONTACTS TO GAAS - A STRUCTURAL, CHEMICAL, AND ELECTRICAL INVESTIGATION/
Authors: COLE MW HAN WY CASAS LM ECKART DW JONES KA
Citation: Mw. Cole et al., PT TI/GE/PD OHMIC CONTACTS TO GAAS - A STRUCTURAL, CHEMICAL, AND ELECTRICAL INVESTIGATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1904-1909
GROWTH OF SINGLE-CRYSTAL GE FILMS ON GAAS AND INGAP AND HIGHLY ORIENTED AU FILMS ON GE
Authors: DUBEY M JONES KA ECKART DW CASAS LM PFEFFER RL
Citation: M. Dubey et al., GROWTH OF SINGLE-CRYSTAL GE FILMS ON GAAS AND INGAP AND HIGHLY ORIENTED AU FILMS ON GE, Applied physics letters, 64(20), 1994, pp. 2697-2699
MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE
Authors: MCLANE GF MEYYAPPAN M LEE HS COLE MW ECKART DW LAREAU RT NAMAROFF M SASSERATH J
Citation: Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 333-336
A COMPARATIVE MATERIALS STUDY OF MAGNETRON ION ETCHED GAAS USING FREON-12, SICL4 AND BCL3
Authors: COLE MW MCLANE GF ECKART DW MEYYAPPAN M
Citation: Mw. Cole et al., A COMPARATIVE MATERIALS STUDY OF MAGNETRON ION ETCHED GAAS USING FREON-12, SICL4 AND BCL3, Scanning, 15(4), 1993, pp. 225-231
SHALLOW ANGLE LAPPING OF III-V SEMICONDUCTOR THIN-LAYER STRUCTURES BYAN ION-BEAM CHEMICAL ETCHING TECHNIQUE
Authors: ECKART DW CASAS LM
Citation: Dw. Eckart et Lm. Casas, SHALLOW ANGLE LAPPING OF III-V SEMICONDUCTOR THIN-LAYER STRUCTURES BYAN ION-BEAM CHEMICAL ETCHING TECHNIQUE, Applied physics letters, 63(8), 1993, pp. 1041-1043
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