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Results: 1-13 |
Results: 13
DESIGN AND OPTIMIZATION OF ALXGA1-XAS ALYGA1-YAS MULTILAYER STRUCTURES FOR VISIBLE WAVELENGTH APPLICATIONS/
Authors: CLARK A EGAN RJ JAGADISH C
Citation: A. Clark et al., DESIGN AND OPTIMIZATION OF ALXGA1-XAS ALYGA1-YAS MULTILAYER STRUCTURES FOR VISIBLE WAVELENGTH APPLICATIONS/, Journal of crystal growth, 170(1-4), 1997, pp. 424-427
SULFUR CONTAMINATION OF (100)GAAS RESULTING FROM SAMPLE PREPARATION PROCEDURES AND ATMOSPHERIC EXPOSURE
Authors: BUTCHER KSA EGAN RJ TANSLEY TL ALEXIEV D
Citation: Ksa. Butcher et al., SULFUR CONTAMINATION OF (100)GAAS RESULTING FROM SAMPLE PREPARATION PROCEDURES AND ATMOSPHERIC EXPOSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 152-158
BACTERIURIA AND URINARY INFECTIONS IN THE ELDERLY
Authors: CHILDS SJ EGAN RJ
Citation: Sj. Childs et Rj. Egan, BACTERIURIA AND URINARY INFECTIONS IN THE ELDERLY, Urologic clinics of North America, 23(1), 1996, pp. 43
HYDROGENATION PASSIVATION OF ACCEPTORS IN MOCVD GROWN P-INSB
Authors: EGAN RJ CHIN VWL BUTCHER KSA TANSLEY TL
Citation: Rj. Egan et al., HYDROGENATION PASSIVATION OF ACCEPTORS IN MOCVD GROWN P-INSB, Solid state communications, 98(8), 1996, pp. 751-754
PHOTOREFLECTANCE OF ALXGA1-XAS GAAS AND GAAS/GAAS INTERFACES AT HIGH LIGHT INTENSITIES/
Authors: GOLDYS EM MITCHELL A TANSLEY TL EGAN RJ CLARK A
Citation: Em. Goldys et al., PHOTOREFLECTANCE OF ALXGA1-XAS GAAS AND GAAS/GAAS INTERFACES AT HIGH LIGHT INTENSITIES/, Optics communications, 124(3-4), 1996, pp. 392-399
NONCONTACT THICKNESS AND COMPOSITION ASSESSMENT OF A STRAINED ALGAAS ALAS/INGAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL STRUCTURE/
Authors: CHIN VWL EGAN RJ OSOTCHAN T VAUGHAN MR ANDERSON SC
Citation: Vwl. Chin et al., NONCONTACT THICKNESS AND COMPOSITION ASSESSMENT OF A STRAINED ALGAAS ALAS/INGAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL STRUCTURE/, Journal of applied physics, 80(4), 1996, pp. 2521-2523
HOLE TRANSPORT IN THE INSB-INAS MATERIAL SYSTEM
Authors: EGAN RJ CHIN VWL TANSLEY TL
Citation: Rj. Egan et al., HOLE TRANSPORT IN THE INSB-INAS MATERIAL SYSTEM, Solid state communications, 93(7), 1995, pp. 553-556
GROWTH OF INAS FROM MONOETHYL ARSINE
Authors: EGAN RJ TANSLEY TL CHIN VWL
Citation: Rj. Egan et al., GROWTH OF INAS FROM MONOETHYL ARSINE, Journal of crystal growth, 147(1-2), 1995, pp. 19-26
ALAS ALGAAS REFLECTION MODULATOR FOR VISIBLE WAVELENGTHS/
Authors: EGAN RJ CLARK A JAGADISH C WILLIAMS JS
Citation: Rj. Egan et al., ALAS ALGAAS REFLECTION MODULATOR FOR VISIBLE WAVELENGTHS/, Electronics Letters, 31(15), 1995, pp. 1270-1271
GROWTH, MORPHOLOGY AND ELECTRICAL-TRANSPORT PROPERTIES OF MOCVD-GROWNP-INSB
Authors: EGAN RJ CHIN VWL TANSLEY TL
Citation: Rj. Egan et al., GROWTH, MORPHOLOGY AND ELECTRICAL-TRANSPORT PROPERTIES OF MOCVD-GROWNP-INSB, Semiconductor science and technology, 9(9), 1994, pp. 1591-1597
DISLOCATION SCATTERING EFFECTS ON ELECTRON-MOBILITY IN INASSB
Authors: EGAN RJ CHIN VWL TANSLEY TL
Citation: Rj. Egan et al., DISLOCATION SCATTERING EFFECTS ON ELECTRON-MOBILITY IN INASSB, Journal of applied physics, 75(5), 1994, pp. 2473-2476
DEFECTS, OPTICAL-ABSORPTION AND ELECTRON-MOBILITY IN INDIUM AND GALLIUM NITRIDES
Authors: TANSLEY TL EGAN RJ
Citation: Tl. Tansley et Rj. Egan, DEFECTS, OPTICAL-ABSORPTION AND ELECTRON-MOBILITY IN INDIUM AND GALLIUM NITRIDES, Physica. B, Condensed matter, 185(1-4), 1993, pp. 190-198
SCHOTTKY-BARRIER HEIGHT MODIFICATION ON HIGH-PURITY LPE GAAS FOLLOWING A SULFUR-BASED ETCH
Authors: BUTCHER KSA ALEXIEV D CHIN VWL TANSLEY TL EGAN RJ KEANE M
Citation: Ksa. Butcher et al., SCHOTTKY-BARRIER HEIGHT MODIFICATION ON HIGH-PURITY LPE GAAS FOLLOWING A SULFUR-BASED ETCH, Semiconductor science and technology, 8(7), 1993, pp. 1451-1458
Risultati: 1-13 |