AAAAAA

   
Results: 1-8 |
Results: 8
APPROACHES TO EXTRA LOW-VOLTAGE DRAM OPERATION BY SOI-DRAM
Authors: EIMORI T OASHI T MORISHITA F IWAMATSU T YAMAGUCHI Y OKUDA F SHIMOMURA K SHIMANO H SAKASHITA N ARIMOTO K INOUE Y KOMORI S INUISHI M NISHIMURA T MIYOSHI H
Citation: T. Eimori et al., APPROACHES TO EXTRA LOW-VOLTAGE DRAM OPERATION BY SOI-DRAM, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1000-1009
A 1-V 46-NS 16-MB SOI-DRAM WITH BODY CONTROL TECHNIQUE
Authors: SHIMOMURA K SHIMANO H SAKASHITA N OKUDA F OASHI T YAMAGUCHI Y EIMORI T INUISHI M ARIMOTO K MAEGAWA S INOUE Y KOMORI S KYUMA K
Citation: K. Shimomura et al., A 1-V 46-NS 16-MB SOI-DRAM WITH BODY CONTROL TECHNIQUE, IEEE journal of solid-state circuits, 32(11), 1997, pp. 1712-1720
FEATURES OF SOI DRAMS AND THEIR POTENTIAL FOR LOW-VOLTAGE AND OR GIGA-BIT SCALE DRAMS/
Authors: YAMAGUCHI Y OASHI T EIMORI T IWAMATSU T MIYAMOTO S SUMA K TSURUDA T MORISHITA F HIROSE M HIDAKA H ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T MIYOSHI H
Citation: Y. Yamaguchi et al., FEATURES OF SOI DRAMS AND THEIR POTENTIAL FOR LOW-VOLTAGE AND OR GIGA-BIT SCALE DRAMS/, IEICE transactions on electronics, E79C(6), 1996, pp. 772-780
DISK-SHAPED STACKED CAPACITOR CELL FOR 256-MB DYNAMIC RANDOM-ACCESS MEMORY
Authors: MORIHARA T OHNO Y EIMORI T KATAYAMA T SATOH S NISHIMURA T MIYOSHI H
Citation: T. Morihara et al., DISK-SHAPED STACKED CAPACITOR CELL FOR 256-MB DYNAMIC RANDOM-ACCESS MEMORY, JPN J A P 1, 33(8), 1994, pp. 4570-4575
AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME
Authors: ASAKURA M OOISHI T TSUKUDE M TOMISHIMA S EIMORI T HIDAKA H OHNO Y ARIMOTO K FUJISHIMA K NISHIMURA T YOSHIHARA T
Citation: M. Asakura et al., AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1303-1309
AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME
Authors: ASAKURA M OOISHI T TSUKUDE M TOMISHIMA S EIMORI T HIDAKA H OHNO Y ARIMOTO K FUJISHIMA K NISHIMURA T YOSHIHARA T
Citation: M. Asakura et al., AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1303-1309
AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/
Authors: SUMA K TSURUDA T HIDAKA H EIMORI T OASHI T YAMAGUCHI Y IWAMATSU T HIROSE M MORISHITA F ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T YOSHIHARA T
Citation: K. Suma et al., AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1323-1329
AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/
Authors: SUMA K TSURUDA T HIDAKA H EIMORI T OASHI T YAMAGUCHI Y IWAMATSU T HIROSE M MORISHITA F ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T YOSHIHARA T
Citation: K. Suma et al., AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1323-1329
Risultati: 1-8 |