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Results: 1-11 |
Results: 11
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES
Authors: NIKISHIN SA TEMKIN H ANTIPOV VG GURIEV AI ZUBRILOV AS ELYUKHIN VA FALEEV NN KYUTT RN CHIN AK
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES, Applied physics letters, 72(19), 1998, pp. 2361-2363
DECOMPOSITION AND STABILITY OF GROUP-III NITRIDE TERNARY CUBIC SPONTANEOUSLY ORDERED ALLOYS
Authors: ELYUKHIN VA AVRUTIN EA MARSH JH PORTNOI EL
Citation: Va. Elyukhin et al., DECOMPOSITION AND STABILITY OF GROUP-III NITRIDE TERNARY CUBIC SPONTANEOUSLY ORDERED ALLOYS, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 531-536
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation: Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
LOW-TEMPERATURE PHOTOLUMINESCENCE OF HEAVY-ION-IMPLANTED INGAP SOLID-SOLUTIONS
Authors: BHATTACHARYYA D VINOKUROV DA GUSINSKII GM ELYUKHIN VA KOVALENKOV OV KYUTT RN MARSH JH NAIDENOV VO PORTNOI EL
Citation: D. Bhattacharyya et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF HEAVY-ION-IMPLANTED INGAP SOLID-SOLUTIONS, Technical physics letters, 24(9), 1998, pp. 690-691
MISCIBILITY GAP OF TERNARY ALLOYS OF BINARY COMPOUNDS WITH ZINCBLENDEAND WURTZITE STRUCTURES USING THE CLUSTER VARIATION METHOD
Authors: ELYUKHIN VA PORTNOI EL AVRUTIN EA MARSH JH
Citation: Va. Elyukhin et al., MISCIBILITY GAP OF TERNARY ALLOYS OF BINARY COMPOUNDS WITH ZINCBLENDEAND WURTZITE STRUCTURES USING THE CLUSTER VARIATION METHOD, Journal of crystal growth, 173(1-2), 1997, pp. 69-72
THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS
Authors: QIU Y NIKISHIN SA TEMKIN H ELYUKHIN VA KUDRIAVTSEV YA
Citation: Y. Qiu et al., THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS, Applied physics letters, 70(21), 1997, pp. 2831-2833
IMMISCIBILITY ZONE OF TRIPLE SOLID-SOLUTI ONS OF A(3)B(5) COMPOUNDS
Authors: ELYUKHIN VA PORTNOI EL
Citation: Va. Elyukhin et El. Portnoi, IMMISCIBILITY ZONE OF TRIPLE SOLID-SOLUTI ONS OF A(3)B(5) COMPOUNDS, Zurnal tehniceskoj fiziki, 66(6), 1996, pp. 142-146
THERMODYNAMIC STABILITY AND STRAIN-ENERGY OF IN0.75GA0.25 AND GASB0.75P0.25 ALLOYS
Authors: ASOMOZA R ELYUKHIN VA KONNIKOV SG
Citation: R. Asomoza et al., THERMODYNAMIC STABILITY AND STRAIN-ENERGY OF IN0.75GA0.25 AND GASB0.75P0.25 ALLOYS, Semiconductor science and technology, 10(8), 1995, pp. 1122-1125
IMMISCIBILITY ZONE OF A(X)(3)B(1-X)(3)C(Y )(5)D(1-Y)(5) SOLID-SOLUTIONS IN QUASI-CHEMICAL APPROXIMATION
Authors: ELYUKHIN VA
Citation: Va. Elyukhin, IMMISCIBILITY ZONE OF A(X)(3)B(1-X)(3)C(Y )(5)D(1-Y)(5) SOLID-SOLUTIONS IN QUASI-CHEMICAL APPROXIMATION, Zurnal fiziceskoj himii, 69(2), 1995, pp. 242-244
CRYSTALLIZATION OF OVERCOOLED A(3)B(5) CO MPOUNDS
Authors: ELYUKHIN VA SOROKINA LP KHAPACHEV YP
Citation: Va. Elyukhin et al., CRYSTALLIZATION OF OVERCOOLED A(3)B(5) CO MPOUNDS, Zurnal fiziceskoj himii, 67(11), 1993, pp. 2297-2298
Risultati: 1-11 |