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Citation: Kl. Enisherlova et al., SOI-STRUCTURES PRODUCED BY THE SILICON DIRECT BONDING METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 33-37

Authors: ENISHERLOVA KL KONTSEVOI YA CHERVYAKOVA EN MITROFANOV EA MAISHEV YP

Citation: Kl. Enisherlova et al., INVESTIGATIONS OF DIAMOND-LIKE CARBON-FILMS PRODUCED DIRECTLY FROM ANION-BEAM OF INDUSTRIAL ION-SOURCE WITH A COLD-CATHODE, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 137-140

Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG CHERVYAKOVA EN

Citation: Av. Govorkov et al., SCANNING ELECTRON-MICROSCOPY STUDIES OF DOUBLE-LAYER SILICON STRUCTURES PREPARED BY EPITAXY AND DIRECT BONDING, Scanning, 19(1), 1997, pp. 55-59

Authors: ENISHERLOVA KL RUSAK TF MILVIDSKII MG REZNICK VJ

Citation: Kl. Enisherlova et al., EFFECT OF NATIVE POINT-DEFECTS ON MORPHOLOGY OF GETTERING CENTERS IN CZ-SILICON WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 120-124

Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG

Citation: Av. Govorkov et al., SEM STUDIES DOUBLE-LAYER SILICON STRUCTUR ES PREPARED BY EPITAXY AND DIRECT BONDING, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 8-13

Authors: ALESHIN AN ENISHERLOVA KL KALININ AA MORDKOVICH VN

Citation: An. Aleshin et al., THE CHEMICAL FACTOR AND ITS INFLUENCE ON THE FORMATION OF DEFECT STRUCTURES AND THEIR GETTERING PROPERTIES IN LAYERS OF SILICON IMPLANTED WITH CHEMICAL-ACTIVE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 184-187