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Results:
1-13
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Results: 13
Authors:
KIM S
MOHSENI H
ERDTMANN M
MICHEL E
JELEN C
RAZEGHI M
Citation: S. Kim et al., GROWTH AND CHARACTERIZATION OF INGAAS INGAP QUANTUM DOTS FOR MIDINFRARED PHOTOCONDUCTIVE DETECTOR/, Applied physics letters, 73(7), 1998, pp. 963-965
Authors:
LANE B
WU D
YI HJ
DIAZ J
RYBALTOWSKI A
KIM S
ERDTMANN M
JEON H
RAZEGHI M
Citation: B. Lane et al., STUDY ON THE EFFECTS OF MINORITY-CARRIER LEAKAGE IN INASSB INPASSB DOUBLE-HETEROSTRUCTURE/, Applied physics letters, 70(11), 1997, pp. 1447-1449
Authors:
KIM S
ERDTMANN M
WU D
KASS E
YI H
DIAZ J
RAZEGHI M
Citation: S. Kim et al., PHOTOLUMINESCENCE STUDY OF INASSB INASSBP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 69(11), 1996, pp. 1614-1616
Authors:
RAZEGHI M
ELIASHEVICH I
DIAZ J
YI HJ
KIM S
ERDTMANN M
WU D
WANG LJ
Citation: M. Razeghi et al., HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 34-41
Authors:
ELHAMRI S
AHOUJJA M
HUDGINS R
MAST DB
MITCHEL WC
RAZEGHI M
ERDTMANN M
Citation: S. Elhamri et al., INTERFACE ROUGHNESS SCATTERING IN THIN QUANTUM-WELLS, Superlattices and microstructures, 18(1), 1995, pp. 75-81
Authors:
HOFF J
HE X
ERDTMANN M
BIGAN E
RAZEGHI M
BROWN GJ
Citation: J. Hoff et al., P-DOPED GAAS GA0.51IN0.49P QUANTUM-WELL INTERSUB-BAND PHOTODETECTORS/, Journal of applied physics, 78(3), 1995, pp. 2126-2128
Authors:
HOFF J
KIM S
ERDTMANN M
WILLIAMS R
PIOTROWSKI J
BIGAN E
RAZEGHI M
BROWN GJ
Citation: J. Hoff et al., BACKGROUND LIMITED PERFORMANCE IN P-DOPED GAAS GA0.71IN0.29AS0.39P0.61 QUANTUM-WELL INFRARED PHOTODETECTORS/, Applied physics letters, 67(1), 1995, pp. 22-24
Authors:
YI HJ
DIAZ J
ELIASHEVICH I
STANTON M
ERDTMANN M
HE X
WANG LJ
RAZEGHI M
Citation: Hj. Yi et al., TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT-DENSITY J(TH) AND DIFFERENTIAL EFFICIENCY ETA(D) OF HIGH-POWER INGAASP GAAS (LAMBDA=0.8-MU-M) LASERS/, Applied physics letters, 66(3), 1995, pp. 253-255
Authors:
YI HJ
DIAZ J
WANG LJ
ELIASHEVICH I
KIM S
WILLIAMS R
ERDTMANN M
HE X
KOLEV E
RAZEGHI M
Citation: Hj. Yi et al., OPTIMIZED STRUCTURE FOR INGAASP GAAS 808-NM HIGH-POWER LASERS/, Applied physics letters, 66(24), 1995, pp. 3251-3253
Authors:
ERDTMANN M
KELLER R
BAUMANN H
Citation: M. Erdtmann et al., PHOTOCHEMICAL IMMOBILIZATION OF HEPARIN, DERMATAN SULFATE, DEXTRAN SULFATE AND ENDOTHELIAL-CELL SURFACE HEPARAN-SULFATE ONTO CELLULOSE MEMBRANES FOR THE PREPARATION OF ATHROMBOGENIC AND ANTITHROMBOGENIC POLYMERS, Biomaterials, 15(13), 1994, pp. 1043-1048
Authors:
DIAZ J
YI HJ
ERDTMANN M
HE X
KOLEV E
GARBUZOV D
BIGAN E
RAZEGHI M
Citation: J. Diaz et al., EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 76(2), 1994, pp. 700-704
Authors:
HE XG
ERDTMANN M
WILLIAMS R
KIM S
RAZEGHI M
Citation: Xg. He et al., CORRELATION BETWEEN X-RAY-DIFFRACTION PATTERNS AND STRAIN DISTRIBUTION INSIDE GAINP GAAS SUPERLATTICES/, Applied physics letters, 65(22), 1994, pp. 2812-2814
Authors:
DIAZ J
ELIASHEVICH I
YI H
HE X
STANTON M
ERDTMANN M
WANG L
RAZEGHI M
Citation: J. Diaz et al., THEORETICAL INVESTIGATION OF MINORITY-CARRIER LEAKAGES OF HIGH-POWER 0.8-MU-M INGAASP INGAP/GAAS LASER-DIODES/, Applied physics letters, 65(18), 1994, pp. 2260-2262
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