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Results:
1-21
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Results: 21
Authors:
LI Z
ANDERSON D
BARNETT B
BEUTTENMULLER R
CHEN W
CHIEN CY
EREMIN V
FRAUTSCHI M
GRIM G
HU G
KWAN S
LANDER D
MANI S
PANDEY SU
WANG Q
WILLARD S
XIE X
Citation: Z. Li et al., SIMULATION AND DESIGN OF VARIOUS CONFIGURATIONS OF SILICON DETECTORS FOR HIGH IRRADIATION TOLERANCE UP TO 6 X 10(14) N CM(2) IN LHC APPLICATION/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 180-183
Authors:
CHEN W
EREMIN V
LI Z
MENICHELLI D
WANG Q
ZHAO L
CHIEN CY
XIE X
ANDERSON D
KWAN S
Citation: W. Chen et al., DESIGN AND PROCESSING OF VARIOUS CONFIGURATIONS OF SILICON PIXEL DETECTORS FOR HIGH IRRADIATION TOLERANCE UP TO 6X10(14) N CM(2) IN LHC APPLICATION/, IEEE transactions on nuclear science, 45(3), 1998, pp. 348-353
Authors:
LI Z
EREMIN V
ILYASHENKO I
IVANOV A
VERBITSKAYA E
Citation: Z. Li et al., INVESTIGATION OF EPITAXIAL SILICON LAYERS AS A MATERIAL FOR RADIATION-HARDENED SILICON DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 585-590
Authors:
BIGGERI U
BORCHI E
BRUZZI M
EREMIN V
LEROY C
LI Z
MENICHELLI D
PIROLLO S
SCIORTINO S
VERBITSKAYA E
Citation: U. Biggeri et al., A COMPARATIVE-STUDY OF HEAVILY IRRADIATED SILICON AND NON IRRADIATED SI LEC GAAS DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 597-601
Authors:
LI Z
LI CJ
EREMIN V
VERBITSKAYA E
Citation: Z. Li et al., DIRECT OBSERVATION AND MEASUREMENTS OF NEUTRON-INDUCED DEEP LEVELS RESPONSIBLE FOR N-EFF CHANGES IN HIGH-RESISTIVITY SILICON DETECTORS USING TCT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 297-307
Authors:
EREMIN V
VERBITSKAYA E
LI Z
SIDOROV A
FRETWURST E
LINDSTROM G
Citation: V. Eremin et al., SCANNING TRANSIENT CURRENT STUDY OF THE I-V STABILIZATION PHENOMENA IN SILICON DETECTORS IRRADIATED BY FAST-NEUTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 350-355
Authors:
FRETWURST E
EREMIN V
FEICK H
GERHARDT J
LI Z
LINDSTROM G
Citation: E. Fretwurst et al., INVESTIGATION OF DAMAGE-INDUCED DEFECTS IN SILICON BY TCT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 356-360
Authors:
LI Z
LI CJ
VERBITSKAYA E
EREMIN V
Citation: Z. Li et al., TEMPERATURE-STIMULATED ABNORMAL ANNEALING OF NEUTRON-INDUCED DAMAGE IN HIGH-RESISTIVITY SILICON DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(2), 1997, pp. 321-329
Authors:
EREMIN V
IVANOV A
VERBITSKAYA E
LI Z
SCHMIDT B
Citation: V. Eremin et al., LONG-TERM INSTABILITIES IN THE DEFECT ASSEMBLY IN IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 44(3), 1997, pp. 819-824
Authors:
EREMIN V
LI Z
Citation: V. Eremin et Z. Li, EFFECT OF DEEP-LEVEL TRAPPING OF FREE-CARRIERS ON THE STABILIZATION OF CURRENT-VOLTAGE CHARACTERISTICS OF HIGH-RESISTIVITY SILICON DETECTORS IRRADIATED BY HIGH FLUENCE OF NEUTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 383(2-3), 1996, pp. 528-536
Authors:
LI Z
LI CJ
EREMIN V
VERBITSKAYA E
Citation: Z. Li et al., INVESTIGATION ON THE N-EFF REVERSE ANNEALING EFFECT USING TSC I-DLTS - RELATIONSHIP BETWEEN NEUTRON-INDUCED MICROSCOPIC DEFECTS AND SILICONDETECTOR ELECTRICAL DEGRADATIONS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 265-275
Authors:
EREMIN V
STROKAN N
VERBITSKAYA E
LI Z
Citation: V. Eremin et al., DEVELOPMENT OF TRANSIENT CURRENT AND CHARGE TECHNIQUES FOR THE MEASUREMENT OF EFFECTIVE NET CONCENTRATION OF IONIZED CHARGES (N-EFF) IN THESPACE-CHARGE REGION OF P-N-JUNCTION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 372(3), 1996, pp. 388-398
Authors:
EREMIN V
LI Z
Citation: V. Eremin et Z. Li, CARRIER DRIFT MOBILITY STUDY IN NEUTRON-IRRADIATED HIGH-PURITY SILICON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 362(2-3), 1995, pp. 338-343
Authors:
EREMIN V
LI Z
ILJASHENKO I
Citation: V. Eremin et al., TRAPPING INDUCED N-EFF AND ELECTRICAL-FIELD TRANSFORMATION AT DIFFERENT TEMPERATURES IN NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 458-462
Authors:
LI Z
CHEN W
DOU L
EREMIN V
KRANER HW
LI CJ
LINDSTROEM G
SPIRITI E
Citation: Z. Li et al., STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES, IEEE transactions on nuclear science, 42(4), 1995, pp. 219-223
Authors:
EREMIN V
IVANOV A
VERBITSKAYA E
LI Z
KRANER HW
Citation: V. Eremin et al., ELEVATED-TEMPERATURE ANNEALING OF THE NEUTRON-INDUCED REVERSE CURRENTAND CORRESPONDING DEFECT LEVELS IN LOW AND HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 387-393
Authors:
VERBITSKAYA E
EREMIN V
STROKAN N
KEMMER J
SCHMIDT B
VONBORANY J
Citation: E. Verbitskaya et al., PHYSICAL ASPECTS OF PRECISE SPECTROMETRY OF ALPHA-PARTICLES WITH SILICON PN-JUNCTION DETECTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(1), 1994, pp. 51-61
Authors:
SCHMIDT B
EREMIN V
IVANOV A
STROKAN N
VERBITSKAYA E
LI Z
Citation: B. Schmidt et al., RELAXATION OF RADIATION-DAMAGE IN SILICON PLANAR DETECTORS, Journal of applied physics, 76(7), 1994, pp. 4072-4076
Authors:
EREMIN V
LI Z
Citation: V. Eremin et Z. Li, DETERMINATION OF THE FERMI-LEVEL POSITION FOR NEUTRON-IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS AND MATERIALS USING THE TRANSIENT CHARGE TECHNIQUE (TCHT), IEEE transactions on nuclear science, 41(6), 1994, pp. 1907-1912
Authors:
EREMIN V
Citation: V. Eremin, SEXUAL LICENTIOUSNESS IS SPREADING AMONG ADOLESCENTS, Russian education and society, 35(7), 1993, pp. 79-94
Authors:
ZHENG L
EREMIN V
STROKAN N
VERBITSKAYA E
Citation: L. Zheng et al., INVESTIGATION OF THE TYPE INVERSION PHENOMENA - RESISTIVITY AND CARRIER MOBILITY IN THE SPACE-CHARGE REGION AND ELECTRICAL NEUTRAL BULK IN NEUTRON-IRRADIATED SILICON P-N JUNCTION DETECTORS(), IEEE transactions on nuclear science, 40(4), 1993, pp. 367-375
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1-21
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