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Results: 1-13 |
Results: 13
FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING, Semiconductors, 31(2), 1997, pp. 189-193
RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS
Authors: VERBITSKAYA EM EREMIN VK ILYASHENKO IN MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS, Instruments and experimental techniques, 40(3), 1997, pp. 338-340
RECOMBINATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN HEAVY-ION TRACKS IN SILICON
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN HEAVY-ION TRACKS IN SILICON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 184-190
RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE TRACKS OF HEAVY-IONS IN SILICON
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE TRACKS OF HEAVY-IONS IN SILICON, Semiconductors, 29(1), 1995, pp. 42-47
PARALLEL SWITCHING OF SEMICONDUCTING DETE CTORS DUE TO ION SPECTROMETRY
Authors: EREMIN VK ILYASHENKO IN STROKAN NB
Citation: Vk. Eremin et al., PARALLEL SWITCHING OF SEMICONDUCTING DETE CTORS DUE TO ION SPECTROMETRY, Pis'ma v Zurnal tehniceskoj fiziki, 20(3), 1994, pp. 29-35
RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN HEAVY-ION TRACKS IN SI
Authors: EREMIN VK ILYASHENKO IN STROKAN NB SHMIDT B
Citation: Vk. Eremin et al., RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN HEAVY-ION TRACKS IN SI, Pis'ma v Zurnal tehniceskoj fiziki, 20(13), 1994, pp. 1-7
CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON()
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM STROKAN NB SUKHANOV VL SCHMIDT B VONBORANY J
Citation: Em. Verbitskaya et al., PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS, Semiconductors, 27(11-12), 1993, pp. 1127-1136
ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON, Semiconductors, 27(11-12), 1993, pp. 1136-1140
DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS, Pis'ma v Zurnal tehniceskoj fiziki, 19(12), 1993, pp. 42-46
NUMERICAL-ANALYSIS OF OXYGEN DISTRIBUTION IN DENSE FILMS VIA NUCLEAR-REACTION ON DEUTERONS
Authors: DYUMIN AN EREMIN VK KONNIKOV SG LEBEDEV VM LUKYANOV YG STROKAN NB
Citation: An. Dyumin et al., NUMERICAL-ANALYSIS OF OXYGEN DISTRIBUTION IN DENSE FILMS VIA NUCLEAR-REACTION ON DEUTERONS, Zurnal tehniceskoj fiziki, 63(9), 1993, pp. 166-172
ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD
Authors: VERBITSKAYA EM EREMIN VK KOBZEV AP KONNIKOV SG STROKAN NB SHIROKOV DM
Citation: Em. Verbitskaya et al., ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD, Zurnal tehniceskoj fiziki, 63(5), 1993, pp. 111-116
HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES
Authors: VERBITSKAYA EM EREMIN VK KONNIKOV SG STROKAN NB BORTNYANSKII AL KLOPENKOV ML PAVLOVETS MV AFONIN OF VIKTOROV BV
Citation: Em. Verbitskaya et al., HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES, Instruments and experimental techniques, 36(6), 1993, pp. 922-926
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