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Results: 1-12 |
Results: 12
SPATIAL-DISTRIBUTION OF THE RADIATION IN THE FAR ZONE OF INASSB INASSBP MESASTRIP LASERS AS A FUNCTION OF CURRENT/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., SPATIAL-DISTRIBUTION OF THE RADIATION IN THE FAR ZONE OF INASSB INASSBP MESASTRIP LASERS AS A FUNCTION OF CURRENT/, Semiconductors, 32(3), 1998, pp. 339-342
INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K)
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K), Semiconductors, 32(2), 1998, pp. 218-221
INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS, Technical physics letters, 23(2), 1997, pp. 151-153
INVESTIGATION OF SPONTANEOUS AND COHERENT RADIATION IN THE 3-4 MU-M WAVELENGTH RANGE IN AN INGAASSB ALGASBAS LASER HETEROSTRUCTURE/
Authors: GREBENSHCHIKOVA EA ERSHOV OG ZHURTANOV BE IMENKOV AN KOLCHANOVA NM YAKOVLEV YP
Citation: Ea. Grebenshchikova et al., INVESTIGATION OF SPONTANEOUS AND COHERENT RADIATION IN THE 3-4 MU-M WAVELENGTH RANGE IN AN INGAASSB ALGASBAS LASER HETEROSTRUCTURE/, Technical physics letters, 23(11), 1997, pp. 887-889
INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AH KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/, Semiconductors, 31(8), 1997, pp. 831-834
CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/, Semiconductors, 31(11), 1997, pp. 1200-1203
MAXIMUM WORKING TEMPERATURE OF INASSB INASSBP DIODE-LASERS/
Authors: DANILOVA TN ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., MAXIMUM WORKING TEMPERATURE OF INASSB INASSBP DIODE-LASERS/, Semiconductors, 30(7), 1996, pp. 667-670
TUNNEL-INJECTION LASER-BASED ON A SINGLE P-GAINASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTION/
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., TUNNEL-INJECTION LASER-BASED ON A SINGLE P-GAINASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTION/, Semiconductors, 30(3), 1996, pp. 223-225
POLARIZATION OF THE EMISSION FROM DOUBLE-HETEROSTRUCTURE LASERS BASEDON INASSB INASSBP/
Authors: DANILOVA TN ERSHOV OG ZEGRYA GG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., POLARIZATION OF THE EMISSION FROM DOUBLE-HETEROSTRUCTURE LASERS BASEDON INASSB INASSBP/, Semiconductors, 29(9), 1995, pp. 834-837
LONG-WAVE LASER (LAMBDA=3.26-MU-M) WITH S EPARATED SINGLE HETEROTRANSITION-II TYPE OF P-GAINASSB P-INAS IN ACTIVE DOMAIN/
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., LONG-WAVE LASER (LAMBDA=3.26-MU-M) WITH S EPARATED SINGLE HETEROTRANSITION-II TYPE OF P-GAINASSB P-INAS IN ACTIVE DOMAIN/, Pis'ma v Zurnal tehniceskoj fiziki, 21(12), 1995, pp. 83-87
INASSBP-BASED LASERS FOR SPECTRAL RANGE O F 2.7-3.0 MU-M WHERE (T=77K)
Authors: DANILOVA TN ERSHOV OG IMENKOV AN TIMCHENKO IN SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSBP-BASED LASERS FOR SPECTRAL RANGE O F 2.7-3.0 MU-M WHERE (T=77K), Pis'ma v Zurnal tehniceskoj fiziki, 20(4), 1994, pp. 87-93
STRUCTURE OF SPACE MODES IN LONG-WAVE STR IP LASERS BASED ON INASSB INASSBP/
Authors: BARANOV AN DANILOVA TN ERSHOV OG IMENKOV AN SHERSTNEV VV YAKOVLEV YP
Citation: An. Baranov et al., STRUCTURE OF SPACE MODES IN LONG-WAVE STR IP LASERS BASED ON INASSB INASSBP/, Pis'ma v Zurnal tehniceskoj fiziki, 19(17), 1993, pp. 30-36
Risultati: 1-12 |