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Results: 1-25 | 26-50 | 51-61
Results: 1-25/61
Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure
Authors: Wang, G Ogawa, T Murase, K Hori, K Soga, T Zhang, BJ Zhao, GY Ishikawa, H Egawa, T Jimbo, T Umeno, M
Citation: G. Wang et al., Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure, JPN J A P 1, 40(8), 2001, pp. 4781-4784
Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateralovergrowth by metalorganic chemical vapor deposition
Authors: Kazi, ZI Thilakan, P Egawa, T Umeno, M Jimbo, T
Citation: Zi. Kazi et al., Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateralovergrowth by metalorganic chemical vapor deposition, JPN J A P 1, 40(8), 2001, pp. 4903-4906
Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain
Authors: Jiang, H Nakata, N Zhao, GY Ishikawa, H Shao, CL Egawa, T Jimbo, T Umeno, M
Citation: H. Jiang et al., Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain, JPN J A P 2, 40(5B), 2001, pp. L505-L507
Suppression of GaInN/GaN multi-quantum-well decomposition during growth oflight-emitting-diode structure
Authors: Ishikawa, H Nakada, N Morn, M Zhao, GY Egawa, T Jimbo, T Umeno, M
Citation: H. Ishikawa et al., Suppression of GaInN/GaN multi-quantum-well decomposition during growth oflight-emitting-diode structure, JPN J A P 2, 40(11A), 2001, pp. L1170-L1172
High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate
Authors: Arulkumaran, S Egawa, T Ishikawa, H Jimbo, T
Citation: S. Arulkumaran et al., High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate, JPN J A P 2, 40(10B), 2001, pp. L1081-L1083
Molecular structure and torsional potential of trans-azobenzene. A gas electron diffraction study
Authors: Tsuji, T Takashima, H Takeuchi, H Egawa, T Konaka, S
Citation: T. Tsuji et al., Molecular structure and torsional potential of trans-azobenzene. A gas electron diffraction study, J PHYS CH A, 105(41), 2001, pp. 9347-9353
Molecular structure of 2-butanimine, an unstable imine, as studied by gas electron diffraction combined with MP2 and DFT calculations
Authors: Egawa, T Konaka, S
Citation: T. Egawa et S. Konaka, Molecular structure of 2-butanimine, an unstable imine, as studied by gas electron diffraction combined with MP2 and DFT calculations, J PHYS CH A, 105(10), 2001, pp. 2085-2090
The earliest stages of B cell development require a chemokine stromal cell-derived factor/pre-B cell growth-stimulating factor
Authors: Egawa, T Kawabata, K Kawamoto, H Amada, K Okamoto, R Fujii, N Kishimoto, T Katsura, Y Nagasawa, T
Citation: T. Egawa et al., The earliest stages of B cell development require a chemokine stromal cell-derived factor/pre-B cell growth-stimulating factor, IMMUNITY, 15(2), 2001, pp. 323-334
Effects of a thiolate axial ligand on the pi ->pi electronic states of oxoferryl porphyrins: a study of the optical and resonance Raman spectra of compounds I and II of chloroperoxidase
Authors: Egawa, T Proshlyakov, DA Miki, H Makino, R Ogura, T Kitagawa, T Ishimura, Y
Citation: T. Egawa et al., Effects of a thiolate axial ligand on the pi ->pi electronic states of oxoferryl porphyrins: a study of the optical and resonance Raman spectra of compounds I and II of chloroperoxidase, J BIOL I CH, 6(1), 2001, pp. 46-54
QoS routing-based congestion management over active internetworking systemusing stream code
Authors: Ano, S Hasegawa, T Nakao, K Kato, T Egawa, T Hino, K Kiriha, Y Kubota, F
Citation: S. Ano et al., QoS routing-based congestion management over active internetworking systemusing stream code, IEICE TR CO, E84B(6), 2001, pp. 1569-1580
Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates
Authors: Wang, G Ogawa, T Kunimasa, F Umeno, M Soga, T Jimbo, T Egawa, T
Citation: G. Wang et al., Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates, J ELEC MAT, 30(7), 2001, pp. 845-849
Docetaxel enhances the cytotoxicity of tetrahydropyranyladriamycin in a sequence-dependent manner
Authors: Kubota, T Egawa, T Furukawa, T Otani, Y Watanabe, M Furukawa, T Kumai, K
Citation: T. Kubota et al., Docetaxel enhances the cytotoxicity of tetrahydropyranyladriamycin in a sequence-dependent manner, ANTICANC R, 21(4A), 2001, pp. 2597-2600
Reactions of N,N-dichloroalkyl amines with solid base as studied by FTIR combined with DFT calculations
Authors: Egawa, T Ito, M Konaka, S
Citation: T. Egawa et al., Reactions of N,N-dichloroalkyl amines with solid base as studied by FTIR combined with DFT calculations, J MOL STRUC, 560(1-3), 2001, pp. 337-344
Elucidation of the differences between the 430-and 455-nm absorbing forms of P450-isocyanide adducts by resonance Raman spectroscopy
Authors: Tomita, T Ogo, S Egawa, T Shimada, H Okamoto, N Imai, Y Watanabe, Y Ishimura, Y Kitagawa, T
Citation: T. Tomita et al., Elucidation of the differences between the 430-and 455-nm absorbing forms of P450-isocyanide adducts by resonance Raman spectroscopy, J BIOL CHEM, 276(39), 2001, pp. 36261-36267
Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers
Authors: Kazi, ZI Egawa, T Umeno, M Jimbo, T
Citation: Zi. Kazi et al., Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers, J APPL PHYS, 90(11), 2001, pp. 5463-5468
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
Authors: Jiang, H Zhao, GY Ishikawa, H Egawa, T Jimbo, T Umeno, M
Citation: H. Jiang et al., Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement, J APPL PHYS, 89(2), 2001, pp. 1046-1052
Effects of annealing on Ti, Pd, and Ni/n-A1(0).Ga-11(0).N-89 Schottky diodes
Authors: Arulkumaran, S Egawa, T Ishikawa, H Umeno, M Jimbo, T
Citation: S. Arulkumaran et al., Effects of annealing on Ti, Pd, and Ni/n-A1(0).Ga-11(0).N-89 Schottky diodes, IEEE DEVICE, 48(3), 2001, pp. 573-580
Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
Authors: Egawa, T Zhao, GY Ishikawa, H Umeno, M Jimbo, T
Citation: T. Egawa et al., Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire, IEEE DEVICE, 48(3), 2001, pp. 603-608
Ameliorative effect of vasopressin-(4-9) through vasopressin V-1A receptoron scopolamine-induced impairments of rat spatial memory in the eight-arm radial maze
Authors: Mishima, K Tsukikawa, H Inada, K Fujii, M Iwasaki, K Matsumoto, Y Abe, K Egawa, T Fujiwara, M
Citation: K. Mishima et al., Ameliorative effect of vasopressin-(4-9) through vasopressin V-1A receptoron scopolamine-induced impairments of rat spatial memory in the eight-arm radial maze, EUR J PHARM, 427(1), 2001, pp. 43-52
Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates
Authors: Zhang, BJ Egawa, T Zhao, GY Ishikawa, H Umeno, M Jimbo, T
Citation: Bj. Zhang et al., Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates, APPL PHYS L, 79(16), 2001, pp. 2567-2569
Effects of molecular structure on the stability of a thermotropic liquid crystal. Gas electron diffraction study of the molecular structure of phenylbenzoate
Authors: Tsuji, T Takeuchi, H Egawa, T Konaka, S
Citation: T. Tsuji et al., Effects of molecular structure on the stability of a thermotropic liquid crystal. Gas electron diffraction study of the molecular structure of phenylbenzoate, J AM CHEM S, 123(26), 2001, pp. 6381-6387
First room-temperature continuous-wave operation of self-formed InGaAs quantum dot-like laser on Si substrate grown by metalorganic chemical vapor deposition
Authors: Kazi, ZI Egawa, T Jimbo, T Umeno, M
Citation: Zi. Kazi et al., First room-temperature continuous-wave operation of self-formed InGaAs quantum dot-like laser on Si substrate grown by metalorganic chemical vapor deposition, JPN J A P 1, 39(7A), 2000, pp. 3860-3862
High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition
Authors: Zhao, GY Ishikawa, H Egawa, T Jimbo, T Umeno, M
Citation: Gy. Zhao et al., High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition, JPN J A P 1, 39(3A), 2000, pp. 1035-1038
Low temperature growth of GaAs on Si substrate by chemical beam epitaxy
Authors: Adachi, M Fujii, Y Egawa, T Jimbo, T Umeno, M
Citation: M. Adachi et al., Low temperature growth of GaAs on Si substrate by chemical beam epitaxy, JPN J A P 2, 39(4B), 2000, pp. L340-L342
Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N
Authors: Arulkumaran, S Egawa, T Zhao, GY Ishikawa, H Jimbo, T Umeno, M
Citation: S. Arulkumaran et al., Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N, JPN J A P 2, 39(4B), 2000, pp. L351-L353
Risultati: 1-25 | 26-50 | 51-61