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Results: 1-9 |
Results: 9

Authors: Hofmann, M Wagner, A Ellmers, C Schlichenmeier, C Schafer, S Hohnsdorf, F Koch, J Stolz, W Koch, SW Ruhle, WW Hader, J Moloney, JV O'Reilly, EP Borchert, B Egorov, AY Riechert, H
Citation: M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011

Authors: Wagner, A Ellmers, C Hohnsdorf, F Koch, J Leu, S Stolz, W Hofmann, M Ruhle, WW
Citation: A. Wagner et al., Emission dynamics and gain of (GaIn)(NAs)/GaAs lasers, PHYS ST S-B, 221(1), 2000, pp. 567-569

Authors: Hofmann, M Karaiskaj, D Ellmers, C Maxisch, T Jahnke, F Kolbe, HJ Weiser, G Rettig, R Leu, S Stolz, W Koch, SW Ruhle, WW
Citation: M. Hofmann et al., Normal-mode linewidths in a semiconductor microcavity with various cavity qualities, PHYS ST S-A, 178(1), 2000, pp. 179-181

Authors: Wagner, A Ellmers, C Hohnsdorf, F Koch, J Agert, C Leu, S Hofmann, M Stolz, W Ruhle, WW
Citation: A. Wagner et al., (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range, APPL PHYS L, 76(3), 2000, pp. 271-272

Authors: Karaiskaj, D Maxisch, T Ellmers, C Kolbe, HJ Weiser, G Rettig, R Leu, S Stolz, W Hofmann, M Jahnke, F Koch, SW Ruhle, WW
Citation: D. Karaiskaj et al., Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling, PHYS REV B, 59(21), 1999, pp. 13525-13527

Authors: Luning, J Eisebitt, S Rubensson, JE Ellmers, C Eberhardt, W
Citation: J. Luning et al., Electronic structure of silicon carbide polytypes studied by soft X-ray spectroscopy, PHYS REV B, 59(16), 1999, pp. 10573-10582

Authors: Ellmers, C Hohnsdorf, F Koch, J Agert, C Leu, S Karaiskaj, D Hofmann, M Stolz, W Ruhle, WW
Citation: C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273

Authors: Ellmers, C Hofmann, MR Karaiskaj, D Leu, S Stolz, W Ruhle, WW Hilpert, M
Citation: C. Ellmers et al., Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics, APPL PHYS L, 74(10), 1999, pp. 1367-1369

Authors: Ellmers, C Leu, S Rettig, R Hofmann, M Ruhle, WW Stolz, W
Citation: C. Ellmers et al., GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP, J CRYST GR, 195(1-4), 1998, pp. 630-636
Risultati: 1-9 |