Authors:
Hofmann, M
Wagner, A
Ellmers, C
Schlichenmeier, C
Schafer, S
Hohnsdorf, F
Koch, J
Stolz, W
Koch, SW
Ruhle, WW
Hader, J
Moloney, JV
O'Reilly, EP
Borchert, B
Egorov, AY
Riechert, H
Citation: M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011
Authors:
Hofmann, M
Karaiskaj, D
Ellmers, C
Maxisch, T
Jahnke, F
Kolbe, HJ
Weiser, G
Rettig, R
Leu, S
Stolz, W
Koch, SW
Ruhle, WW
Citation: M. Hofmann et al., Normal-mode linewidths in a semiconductor microcavity with various cavity qualities, PHYS ST S-A, 178(1), 2000, pp. 179-181
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Hofmann, M
Stolz, W
Ruhle, WW
Citation: A. Wagner et al., (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range, APPL PHYS L, 76(3), 2000, pp. 271-272
Authors:
Karaiskaj, D
Maxisch, T
Ellmers, C
Kolbe, HJ
Weiser, G
Rettig, R
Leu, S
Stolz, W
Hofmann, M
Jahnke, F
Koch, SW
Ruhle, WW
Citation: D. Karaiskaj et al., Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling, PHYS REV B, 59(21), 1999, pp. 13525-13527
Authors:
Luning, J
Eisebitt, S
Rubensson, JE
Ellmers, C
Eberhardt, W
Citation: J. Luning et al., Electronic structure of silicon carbide polytypes studied by soft X-ray spectroscopy, PHYS REV B, 59(16), 1999, pp. 10573-10582
Authors:
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Karaiskaj, D
Hofmann, M
Stolz, W
Ruhle, WW
Citation: C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273
Authors:
Ellmers, C
Leu, S
Rettig, R
Hofmann, M
Ruhle, WW
Stolz, W
Citation: C. Ellmers et al., GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP, J CRYST GR, 195(1-4), 1998, pp. 630-636