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Results:
1-16
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Results: 16
Authors:
Gerard, I
Simon, N
Vigneron, J
Mathieu, C
Etcheberry, A
Citation: I. Gerard et al., Photodissolution of n-GaAs electrodes under laser illumination: control ofthe etching profile, SEMIC SCI T, 16(4), 2001, pp. 222-226
Authors:
Erne, BH
Lefevre, F
Lorans, D
Ballutaud, D
Debiemme-Chouvy, C
Vigneron, J
Etcheberry, A
Citation: Bh. Erne et al., Surface films on HgCdTe and CdTe etched in ferricyanide solution, APPL SURF S, 175, 2001, pp. 579-584
Authors:
Gerard, I
Simon, N
Etcheberry, A
Citation: I. Gerard et al., Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis, APPL SURF S, 175, 2001, pp. 734-739
Authors:
Beaunier, L
Cachet, H
Cortes, R
Froment, M
Etcheberry, A
Citation: L. Beaunier et al., Heteroepitaxy of electrodeposited CdSe on (100) InP and GaAs single crystals, THIN SOL FI, 387(1-2), 2001, pp. 108-110
Authors:
Etcheberry, A
Cachet, H
Cortes, R
Froment, M
Citation: A. Etcheberry et al., Electrodeposition of CdSe on GaAs and InP substrates, SURF SCI, 482, 2001, pp. 954-959
Authors:
Goncalves, AM
Mathieu, C
Herlem, M
Etcheberry, A
Citation: Am. Goncalves et al., A striking anodic behaviour of p-GaAs semiconductor in acidic liquid ammonia (223 K), ELECTR ACT, 46(18), 2001, pp. 2835-2841
Authors:
Goncalves, AM
Mathieu, C
Herlem, M
Etcheberry, A
Citation: Am. Goncalves et al., Oxygen reduction mechanism in acidic liquid ammonia (223 K) - Contributionof Pt microelectrodes and III-V semiconductors, J ELCHEM SO, 148(1), 2001, pp. E8-E12
Authors:
Liberman, S
Quelin, X
Sztern, J
Dumont, Y
Etcheberry, A
Bourdon, A
Gadenne, P
Citation: S. Liberman et al., Optical behavior of RF sputtered Au-TiO2 thin cermet films, influence of the gold particles size and concentration, EPJ-APPL PH, 11(2), 2000, pp. 91-95
Authors:
Rothschild, A
Quennoy, A
Etcheberry, A
Debiemme-Chouvy, C
Citation: A. Rothschild et al., Reactivity of heteropolyanions toward GaAs compound, J VAC SCI A, 18(5), 2000, pp. 2441-2447
Authors:
Cachet, H
Cortes, R
Froment, M
Etcheberry, A
Citation: H. Cachet et al., Electrodeposition of epitaxial CdSe on (111) gallium arsenide, THIN SOL FI, 361, 2000, pp. 84-87
Authors:
Erne, BH
Mathieu, C
Vigneron, J
Million, A
Etcheberry, A
Citation: Bh. Erne et al., Porous anodic etching of p-Cd1-xZnxTe studied by photocurrent spectroscopy, J ELCHEM SO, 147(10), 2000, pp. 3759-3767
Authors:
Goncalves, AM
Mathieu, C
Herlem, M
Etcheberry, A
Citation: Am. Goncalves et al., Using Pt microelectrodes in liquid ammonia for studying proton reduction, J ELEC CHEM, 477(2), 1999, pp. 140-145
Authors:
Goncalves, AM
Mathieu, C
Herlem, M
Etcheberry, A
Citation: Am. Goncalves et al., Oxygen reduction mechanisms at p-InP and p-GaAs electrodes in liquid ammonia in neutral buffered medium and acidic media, J ELEC CHEM, 462(1), 1999, pp. 88-96
Authors:
Erne, BH
Million, A
Vigneron, J
Mathieu, C
Debiemme-Chouvy, C
Etcheberry, A
Citation: Bh. Erne et al., Porosity and tellurium-enrichment of anodized p-Cd0.95Zn0.05Te, EL SOLID ST, 2(12), 1999, pp. 619-621
Authors:
Gerard, I
Debiemme-Chouvy, C
Vigneron, J
Bellenger, F
Kostelitz, S
Etcheberry, A
Citation: I. Gerard et al., Local oxide growth on the n-GaAs surface studied by small area XPS, SURF SCI, 435, 1999, pp. 131-135
Authors:
Sutter, EMM
Gerard, I
Etcheberry, A
Citation: Emm. Sutter et al., Photoluminescence as an in situ probe for copper electrodeposition on p-GaAs, J ELCHEM SO, 146(4), 1999, pp. 1448-1454
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1-16
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