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Results: 1-25/38
Authors:
FAY P
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., THE KEY TO COMMUNICATING AT LIGHT SPEED, IEEE circuits and devices magazine, 14(5), 1998, pp. 16-25
Authors:
FAY P
WOHLMUTH W
MAHAJAN A
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., LOW-NOISE PERFORMANCE OF MONOLITHICALLY INTEGRATED 12-GB S P-I-N/HEMTPHOTORECEIVER FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS/, IEEE photonics technology letters, 10(5), 1998, pp. 713-715
Authors:
FAY P
WOHLMUTH W
MAHAJAN A
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., A COMPARATIVE-STUDY OF INTEGRATED PHOTORECEIVERS USING MSM HEMT AND PIN/HEMT TECHNOLOGIES/, IEEE photonics technology letters, 10(4), 1998, pp. 582-584
Authors:
PIENEMAN WC
FAY P
BRIET E
REITSMA PH
BERTINA RM
Citation: Wc. Pieneman et al., PARTIAL RECONSTITUTION OF FACTOR-VIII ACTIVITY FROM A MILD CRM(-A PATIENT BY REPLACEMENT OF THE DEFECTIVE A2 DOMAIN() HEMOPHILIA), Thrombosis and haemostasis, 79(5), 1998, pp. 943-948
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2422-2429
Authors:
ARAFA M
WOHLMUTH WA
FAY P
ADESIDA I
Citation: M. Arafa et al., EFFECT OF DIFFRACTION AND INTERFERENCE IN SUBMICRON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 62-67
Authors:
MAHAJAN A
FAY P
ARAFA M
ADESIDA I
Citation: A. Mahajan et al., INTEGRATION OF INALAS INGAAS/INP ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS FOR HIGH-SPEED CIRCUIT APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 338-340
Authors:
WOHLMUTH W
ARAFA M
FAY P
SEO JW
ADESIDA I
Citation: W. Wohlmuth et al., IMPULSE-RESPONSE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS USING A CONFORMAL MAPPING TECHNIQUE AND EXTRACTED CIRCUIT PARAMETERS, JPN J A P 1, 36(2), 1997, pp. 652-656
Authors:
HANNAN M
GRUNDBACHER R
FAY P
ADESIDA I
GIANNETTA RW
WAGNER CJ
MELLOCH MR
Citation: M. Hannan et al., FABRICATION AND TRANSPORT STUDY OF FINITE LATERAL SUPERLATTICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2821-2824
Authors:
FAY P
WOHLMUTH W
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., HIGH-SPEED DIGITAL AND ANALOG PERFORMANCE OF LOW-NOISE INTEGRATED MSM-HEMT PHOTORECEIVERS, IEEE photonics technology letters, 9(7), 1997, pp. 991-993
Authors:
WOHLMUTH WA
FAY P
VACCARO K
MARTIN EA
ADESIDA I
Citation: Wa. Wohlmuth et al., HIGH-SPEED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH THIN ABSORPTION LAYERS, IEEE photonics technology letters, 9(5), 1997, pp. 654-656
Authors:
WOHLMUTH WA
SEO JW
FAY P
CANEAU C
ADESIDA I
Citation: Wa. Wohlmuth et al., A HIGH-SPEED ITO-INALAS-INGAAS SCHOTTKY-BARRIER PHOTODETECTOR, IEEE photonics technology letters, 9(10), 1997, pp. 1388-1390
Authors:
MAHAJAN A
CUEVA G
ARAFA M
FAY P
ADESIDA I
Citation: A. Mahajan et al., FABRICATION AND CHARACTERIZATION OF AN INALAS INGAAS/INP RING OSCILLATOR USING INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS/, IEEE electron device letters, 18(8), 1997, pp. 391-393
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., 0.3-MU-M GATE-LENGTH ENHANCEMENT-MODE INALAS INGAAS/INP HIGH-ELECTRON-MOBILITY TRANSISTOR/, IEEE electron device letters, 18(6), 1997, pp. 284-286
Authors:
FAY P
ARAFA M
WOHLMUTH WA
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., DESIGN, FABRICATION, AND PERFORMANCE OF HIGH-SPEED MONOLITHICALLY INTEGRATED INALAS INGAAS/INP MSM/HEMT PHOTORECEIVERS/, Journal of lightwave technology, 15(10), 1997, pp. 1871-1879
Authors:
LU YN
PLANELLES V
LI XQ
PALANIAPPAN C
DAY B
CHALLITAEID P
AMADO R
STEPHENS D
KOHN DB
BAKKER A
FAY P
BAMBARA RA
ROSENBLATT JD
Citation: Yn. Lu et al., INHIBITION OF HIV-1 REPLICATION USING A MUTATED TRNA(LYS-3) PRIMER, The Journal of biological chemistry, 272(23), 1997, pp. 14523-14531
Authors:
SHERMAN S
EARLE D
BUCKSOT L
FAY P
FLUECKIGER J
FOGEL E
LEHMAN G
Citation: S. Sherman et al., POST ERCP MILD PANCREATITIS FREQUENCY - INFLUENCE OF HOSPITAL ADMISSION POLICY, Gastrointestinal endoscopy, 45(4), 1997, pp. 494-494
Authors:
SHERMAN S
GOTTLIEB K
EARLE D
BAUTE P
KOM M
BUCKSOT L
FAY P
LEHMAN G
Citation: S. Sherman et al., THE ROLE OF MICROLITHIASIS IN TYPE-II AND TYPE-III SPHINCTER OF ODDI DYSFUNCTION (SOD), Gastrointestinal endoscopy, 45(4), 1997, pp. 495-495
Authors:
SHERMAN S
GOTTLIEB K
EARLE D
BAUTE P
KORN M
FOGEL E
BUCKSOT L
FAY P
LEHMAN G
Citation: S. Sherman et al., THE ROLE OF MICROLITHIASIS IN IDIOPATHIC ACUTE-PANCREATITIS, Gastrointestinal endoscopy, 45(4), 1997, pp. 563-563
Authors:
WOHLMUTH W
ARAFA M
FAY P
ADESIDA I
Citation: W. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH A HYBRID COMBINATION OF TRANSPARENT AND OPAQUE ELECTRODES, Applied physics letters, 70(22), 1997, pp. 3026-3028
Authors:
PANEPUCCI R
REUTER E
FAY P
YOUTSEY C
KLUENDER J
CANEAU C
COLEMAN JJ
BISHOP SG
ADESIDA I
Citation: R. Panepucci et al., QUANTUM DOTS FABRICATED IN INP INGAAS BY FREE CL-2 GAS ETCHING AND METALORGANIC CHEMICAL-VAPOR-DEPOSITION REGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3641-3645
Authors:
WOHLMUTH WA
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., DARK CURRENT SUPPRESSION IN GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, IEEE photonics technology letters, 8(8), 1996, pp. 1061-1063
Authors:
FAY P
WOHLMUTH W
CANEAU C
ADESIDA I
Citation: P. Fay et al., 18.5-GHZ BANDWIDTH MONOLITHIC MSM MODFET PHOTORECEIVER FOR 1.55-MU-M WAVELENGTH COMMUNICATION-SYSTEMS/, IEEE photonics technology letters, 8(5), 1996, pp. 679-681
Authors:
FAY P
Citation: P. Fay, 'SAXIFRAGE', Stand magazine, 37(2), 1996, pp. 21-21
Authors:
ARAFA M
FAY P
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451