AAAAAA

   
Results: 1-9 |
Results: 9
THERMAL-STABILITY OF THIN POLY-SI TA2O5/TIN CAPACITORS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS/
Authors: ISHIBASHI K PATNAIK BK PARIKH NR SANDHU GS FAZAN PC
Citation: K. Ishibashi et al., THERMAL-STABILITY OF THIN POLY-SI TA2O5/TIN CAPACITORS FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2822-2825
EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS
Authors: HAN LK YOON GW KWONG DL MATHEWS VK FAZAN PC
Citation: Lk. Han et al., EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS, IEEE electron device letters, 15(8), 1994, pp. 280-282
EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS
Authors: YOON GW JOSHI AB KWONG DL MATHEWS VK THAKUR RPS FAZAN PC
Citation: Gw. Yoon et al., EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 347-351
PHYSICAL AND ELECTRICAL CHARACTERISTICS OF THIN SILICON-NITRIDE DIELECTRIC FILMS DEPOSITED ON SMOOTH AND RUGGED POLYCRYSTALLINE SILICON AFTER RAPID THERMAL NITRIDATION
Authors: MATHEWS VK DITALI A FAZAN PC
Citation: Vk. Mathews et al., PHYSICAL AND ELECTRICAL CHARACTERISTICS OF THIN SILICON-NITRIDE DIELECTRIC FILMS DEPOSITED ON SMOOTH AND RUGGED POLYCRYSTALLINE SILICON AFTER RAPID THERMAL NITRIDATION, Journal of the Electrochemical Society, 141(4), 1994, pp. 1066-1070
RESIDUES, POLYCRYSTALLINE SILICON VOIDS, AND ACTIVE AREA DAMAGE WITH THE POLYCRYSTALLINE SILICON BUFFERED LOCAL OXIDATION OF SILICON ISOLATION PROCESS
Authors: MATHEWS VK FAZAN PC MADDOX RL
Citation: Vk. Mathews et al., RESIDUES, POLYCRYSTALLINE SILICON VOIDS, AND ACTIVE AREA DAMAGE WITH THE POLYCRYSTALLINE SILICON BUFFERED LOCAL OXIDATION OF SILICON ISOLATION PROCESS, Applied physics letters, 64(1), 1994, pp. 94-96
HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON
Authors: LO GQ KWONG DL FAZAN PC MATHEWS VK SANDLER N
Citation: Gq. Lo et al., HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON, IEEE electron device letters, 14(5), 1993, pp. 216-218
PHYSICAL AND ELECTRICAL CHARACTERIZATION OF POLY BUFFERED LOCOS ISOLATION PROCESS FOR SUB 0.5-MU-M ULSI TECHNOLOGY
Authors: MADDOX RL MATHEWS VK FAZAN PC
Citation: Rl. Maddox et al., PHYSICAL AND ELECTRICAL CHARACTERIZATION OF POLY BUFFERED LOCOS ISOLATION PROCESS FOR SUB 0.5-MU-M ULSI TECHNOLOGY, Semiconductor science and technology, 8(12), 1993, pp. 2143-2145
FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION
Authors: ITOH S LO GQ KWONG DL MATHEWS VK FAZAN PC
Citation: S. Itoh et al., FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1176-1178
DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON
Authors: LO GQ KWONG DL MATHEWS VK FAZAN PC DITALI A
Citation: Gq. Lo et al., DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON, IEEE electron device letters, 13(4), 1992, pp. 183-185
Risultati: 1-9 |