Authors:
SPITZMULLER J
FEHRENBACHER M
HAUG F
RAUSCHER H
BEHM RJ
Citation: J. Spitzmuller et al., THE ROLE OF ANTIPHASE DOMAIN BOUNDARIES IN SI EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION FROM SIH4 OR SIH2CL2 ON SI(100)-(2X1), Applied physics A: Materials science & processing, 66, 1998, pp. 1025-1029
Authors:
FEHRENBACHER M
SPITZMULLER J
PITTER M
RAUSCHER H
BEHM RJ
Citation: M. Fehrenbacher et al., STRUCTURES ON SI(100)2X1 AT THE INITIAL-STAGES OF HOMOEPITAXY BY SIH4DECOMPOSITION, JPN J A P 1, 36(6B), 1997, pp. 3804-3809
Citation: M. Fehrenbacher et al., DISSOCIATIVE ADSORPTION OF SIH2CL2 ON SI(111)7X7 (VOL 198, PG 205, 1997), Zeitschrift für physikalische Chemie, 199, 1997, pp. 123-123
Authors:
SPITZMULLER J
FEHRENBACHER M
PITTER M
RAUSCHER H
BEHM RJ
Citation: J. Spitzmuller et al., LOCAL ARRANGEMENT OF SILYLENE GROUPS ON SI(100)2X1 AFTER SIH4 DECOMPOSITION, Physical review. B, Condensed matter, 55(7), 1997, pp. 4659-4664
Authors:
FEHRENBACHER M
RAUSCHER H
MEMMERT U
BEHM RJ
Citation: M. Fehrenbacher et al., SIH4 CHEMICAL-VAPOR-DEPOSITION ON SI(111)-(7X7) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Surface science, 385(1), 1997, pp. 123-145
Authors:
FEHRENBACHER M
SPITZMULLER J
MEMMERT U
RAUSCHER H
BEHM RJ
Citation: M. Fehrenbacher et al., INTERACTION OF SIH4 WITH SI(100)2X1 AND WITH SI(111)7X7 AT 690 K - A COMPARATIVE SCANNING-TUNNELING-MICROSCOPY STUDY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1499-1504
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