Authors:
BANDET J
AGUIR K
LOLLMAN D
FENNOUH A
CARCHANO H
Citation: J. Bandet et al., RAMAN AND ELECTRICAL CHARACTERIZATIONS OF A-GAAS1-XNX THIN-FILMS GROWN ON C-SI(P) SUBSTRATES BY N-2 REACTIVE SPUTTERING, JPN J A P 1, 36(1A), 1997, pp. 11-18
Citation: K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/, Journal de physique. III, 5(10), 1995, pp. 1573-1585
Citation: A. Fennouh et al., ELECTRICAL CHARACTERISTICS OF AMORPHOUS GAAS-N-CRYSTALLINE SI HETEROJUNCTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 27-31