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Results: 1-9 |
Results: 9
MOLECULAR-BEAM-EPITAXY GROWTH OF 1.3-MU-M HIGH-REFLECTIVITY ALGAASSB ALASSB BRAGG-MIRROR/
Authors: ALMUNEAU G GENTY F CHUSSEAU L BERTRU N FRAISSE B JACQUET J
Citation: G. Almuneau et al., MOLECULAR-BEAM-EPITAXY GROWTH OF 1.3-MU-M HIGH-REFLECTIVITY ALGAASSB ALASSB BRAGG-MIRROR/, Electronics Letters, 33(14), 1997, pp. 1227-1228
SHALLOW STRAINED INXGA1-XAS INYGA1-YAS SUPERLATTICES EMBEDDED IN P-I-N-DIODES - STRUCTURAL-PROPERTIES AND OPTICAL-RESPONSE/
Authors: ROYO F SCHWEDLER R CAMASSEL J MEYER R HARDTDEGEN H FRAISSE B
Citation: F. Royo et al., SHALLOW STRAINED INXGA1-XAS INYGA1-YAS SUPERLATTICES EMBEDDED IN P-I-N-DIODES - STRUCTURAL-PROPERTIES AND OPTICAL-RESPONSE/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15706-15712
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Authors: STOEHR M AUBEL D JUILLAGUET S BISCHOFF JL KUBLER L BOLMONT D HAMDANI F FRAISSE B FOURCADE R
Citation: M. Stoehr et al., PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001), Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926
POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS
Authors: TALIERCIO T DILHAN M MASSONE E FOUCARAN A GUE AM BRETAGNON T FRAISSE B MONTES L
Citation: T. Taliercio et al., POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 43-46
REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS
Authors: TALIERCIO T DILHAN M MASSONE E GUE AM FRAISSE B FOUCARAN A
Citation: T. Taliercio et al., REALIZATION OF POROUS SILICON MEMBRANES FOR GAS SENSOR APPLICATIONS, Thin solid films, 255(1-2), 1995, pp. 310-312
IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY
Authors: AUBEL D DIANI M STOEHR M BISCHOFF JL KUBLER L BOLMONT D FRAISSE B FOURCADE R MULLER D
Citation: D. Aubel et al., IN-SITU SURFACE TECHNIQUE ANALYSES AND EX-SITU CHARACTERIZATION OF SI1-XGEX EPILAYERS GROWN ON SI(001)-2X1 BY MOLECULAR-BEAM EPITAXY, Journal de physique. III, 4(4), 1994, pp. 733-740
STRUCTURAL INVESTIGATIONS OF INGAAS INGAAS SLSS FOR OPTOELECTRONIC DEVICE APPLICATIONS/
Authors: ROYO F CAMASSEL J LEFEBVRE P MEYER R HARDTDEGEN H FRAISSE B SCHWEDLER R
Citation: F. Royo et al., STRUCTURAL INVESTIGATIONS OF INGAAS INGAAS SLSS FOR OPTOELECTRONIC DEVICE APPLICATIONS/, Superlattices and microstructures, 15(2), 1994, pp. 187-191
GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/
Authors: KOHL A JUILLAGUET S FRAISSE B SCHWEDLER R ROYO F PEYRE H BRUGGEMAN F WOLTER K LEO K KURZ H CAMASSEL J
Citation: A. Kohl et al., GROWTH AND CHARACTERIZATION OF IN0.53GA0.47AS INXGA1-XAS STRAINED-LAYER SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 244-248
DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: STOEHR M MAURIN M HAMDANI F LASCARAY JP BARBUSSE D FRAISSE B FOURCADE R ABRAHAM P MONTEIL Y
Citation: M. Stoehr et al., DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 257-261
Risultati: 1-9 |