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Results: 1-25/118
Authors:
SUNAMURA H
USAMI N
SHIRAKI Y
FUKATSU S
Citation: H. Sunamura et al., NEW STRAIN-RELIEVING MICROSTRUCTURE IN PURE-GE SI SHORT-PERIOD SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1595-1598
Authors:
TADA E
KAKUDATE S
OKA K
OBARA K
NAKAHIRA M
TAGUCHI K
ITOH A
FUKATSU S
TAKEDA N
TAKAHASHI H
AKOU K
SHIBANUMA K
BURGESS T
TESINI A
MATSUHIRA N
HOLLOWAY C
HAANGE R
Citation: E. Tada et al., DEVELOPMENT OF REMOTE MAINTENANCE EQUIPMENT FOR ITER BLANKETS, Fusion engineering and design, 42, 1998, pp. 463-471
Authors:
OBARA K
ITO A
KAKUDATE S
OKA K
NAKAHIRA M
MORITA Y
TAGUCHI K
FUKATSU S
TAKEDA N
TAKAHASHI H
TADA E
HAGER R
SHIBANUMA K
HAANGE R
Citation: K. Obara et al., DEVELOPMENT OF 15-M-LONG RADIATION-HARD PERISCOPE FOR ITER IN-VESSEL VIEWING, Fusion engineering and design, 42, 1998, pp. 501-509
Authors:
HASHIMOTO M
TSUNEMATSU T
OHKAW Y
FUKATSU S
NARUSE H
YAMADA H
SASAMOTO T
KOBAYASHI H
SHIBUKUWA K
MURANO Y
ITOH I
FUNABASHI K
KAWAHARA S
YOSHIDA T
KIKUNAGA H
Citation: M. Hashimoto et al., PIPE SUPPORT ACROSS ISOLATED AND SEISMIC STRUCTURE IN ITER, Fusion engineering and design, 41, 1998, pp. 407-414
Authors:
FUKATSU S
SUNAMURA H
SHIRAKI Y
KOMIYAMA S
Citation: S. Fukatsu et al., SUPPRESSION OF PHONON REPLICA IN THE RADIATIVE RECOMBINATION OF AN MBE-GROWN TYPE-II GE SI QUANTUM-DOT/, Thin solid films, 321, 1998, pp. 65-69
Authors:
KISHIMOTO Y
SHIRAKI Y
FUKATSU S
Citation: Y. Kishimoto et al., GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF SIGE ALLOY-BASED NAKED QUANTUM-WELLS, Thin solid films, 321, 1998, pp. 81-85
Authors:
MIYAKE Y
SHIRAKI Y
FUKATSU S
Citation: Y. Miyake et al., SPONTANEOUS OSCILLATOR STRENGTH MODULATION IN MBE-GROWN SI GE SUPERLATTICES/, Thin solid films, 321, 1998, pp. 153-157
Authors:
ISHIKAWA Y
SHIBATA N
FUKATSU S
Citation: Y. Ishikawa et al., EPITAXIAL SI SIO2 LOW-DIMENSIONAL STRUCTURES, Thin solid films, 321, 1998, pp. 234-240
Authors:
FUKATSU S
ISHIKAWA Y
SAITO T
SHIBATA N
Citation: S. Fukatsu et al., SIGE-BASED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE CREATED BY LOW-ENERGYSEPARATION-BY-IMPLANTED-OXYGEN, Applied physics letters, 72(26), 1998, pp. 3485-3487
Authors:
ISHIKAWA Y
SHIBATA N
FUKATSU S
Citation: Y. Ishikawa et al., CREATION OF [110]-ALIGNED SI QUANTUM WIRES ENCOMPASSED BY SIO2 USING LOW-ENERGY SEPARATION-BY-IMPLANTED-OXYGEN ON A V-GROOVE PATTERNED SUBSTRATE, Applied physics letters, 72(20), 1998, pp. 2592-2594
Authors:
ISHIKAWA Y
SHIBATA N
FUKATSU S
Citation: Y. Ishikawa et al., CREATION OF HIGHLY-ORDERED SI NANOCRYSTAL DOTS SUSPENDED IN SIO2 BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY OXYGEN IMPLANTATION, JPN J A P 1, 36(6B), 1997, pp. 4035-4037
Authors:
USAMI N
SHIRAKI Y
FUKATSU S
Citation: N. Usami et al., SPECTROSCOPIC STUDY OF SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE, Semiconductor science and technology, 12(12), 1997, pp. 1596-1602
Authors:
FUKATSU S
MERA Y
INOUE M
MAEDA K
Citation: S. Fukatsu et al., TIME-RESOLVED DISLOCATION-RELATED LUMINESCENCE IN STRAIN-RELAXED SIGESI/, Thin solid films, 294(1-2), 1997, pp. 33-36
Authors:
ISHIKAWA Y
SHIBATA N
FUKATSU S
Citation: Y. Ishikawa et al., HIGHLY ORIENTED SI NANOPARTICLES IN SIO2 CREATED BY SI MOLECULAR-BEAMEPITAXY WITH OXYGEN IMPLANTATION, Thin solid films, 294(1-2), 1997, pp. 227-230
Authors:
FUKATSU S
Citation: S. Fukatsu, DYNAMICAL BEHAVIOR IN A SHALLOW QUANTUM CONFINEMENT SYSTEM, Thin solid films, 294(1-2), 1997, pp. 318-324
Authors:
SUNAMURA H
USAMI N
SHIRAKI Y
FUKATSU S
Citation: H. Sunamura et al., ANOMALOUS PHOTOLUMINESCENCE OF PURE-GE SI TYPE-II COUPLED QUANTUM-WELLS (II-CQWS)/, Thin solid films, 294(1-2), 1997, pp. 336-339
Authors:
MIYAKE Y
KIM JY
SHIRAKI Y
FUKATSU S
Citation: Y. Miyake et al., WHY IS A QUANTUM-CONFINED STARK SHIFT ABSENT IN TYPE-I STRAINED SI1-XGEX SI SYMMETRICAL QUANTUM-WELLS/, Journal of crystal growth, 175, 1997, pp. 465-468
Authors:
ISHIKAWA Y
SHIBATA N
FUKATSU S
Citation: Y. Ishikawa et al., STRATIFIED SUSPENSION OF HIGHLY ORDERED SI NANOPARTICLES IN SIO2 CREATED BY SI MBE WITH OXYGEN COIMPLANTATION, Journal of crystal growth, 175, 1997, pp. 493-498
Authors:
KIM ES
USAMI N
SUNAMURA H
FUKATSU S
SHIRAKI Y
Citation: Es. Kim et al., LUMINESCENCE STUDY ON GE ISLANDS AS STRESSORS ON SI1-XGEX SI QUANTUM-WELL/, Journal of crystal growth, 175, 1997, pp. 519-523
Authors:
NAYAK DK
USAMI N
FUKATSU S
SHIRAKI Y
Citation: Dk. Nayak et al., PHOTOLUMINESCENCE STUDY OF THE OPTICAL-PROPERTIES OF SIGE QUANTUM-WELLS ON SEPARATION BY IMPLANTED OXYGEN SUBSTRATES, Journal of applied physics, 81(8), 1997, pp. 3484-3489
Authors:
FUKATSU S
SUNAMURA H
SHIRAKI Y
KOMIYAMA S
Citation: S. Fukatsu et al., PHONONLESS RADIATIVE RECOMBINATION OF INDIRECT EXCITONS IN A SI GE TYPE-II QUANTUM-DOT/, Applied physics letters, 71(2), 1997, pp. 258-260
Authors:
KISHIMOTO Y
SHIRAKI Y
FUKATSU S
Citation: Y. Kishimoto et al., PHOTOLUMINESCENCE STUDY OF SI1-XGEX SI SURFACE QUANTUM-WELLS/, Applied physics letters, 70(21), 1997, pp. 2837-2839
Authors:
FUKATSU S
USAMI N
SHIRAKI Y
Citation: S. Fukatsu et al., IMPROVED LUMINESCENCE QUALITY WITH AN ASYMMETRIC CONFINEMENT POTENTIAL IN SI-BASED TYPE-II QUANTUM-WELLS GROWN ON A GRADED SIGE RELAXED BUFFER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2387-2390
Authors:
SHIRAKI Y
SUNAMURA H
USAMI N
FUKATSU S
Citation: Y. Shiraki et al., FORMATION AND OPTICAL-PROPERTIES OF SIGE SI QUANTUM STRUCTURES/, Applied surface science, 102, 1996, pp. 263-271
Authors:
MURAKI K
FUJIWARA A
FUKATSU S
SHIRAKI Y
TAKAHASHI Y
Citation: K. Muraki et al., EVIDENCE FOR RESONANT ELECTRON-CAPTURE AND CHARGE BUILDUP IN GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 53(23), 1996, pp. 15477-15480