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Results: 1-12 |
Results: 12
Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
Authors: Falke, M Gebhardt, B Beddies, G Teichert, S Hinneberg, HJ
Citation: M. Falke et al., Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001), MICROEL ENG, 55(1-4), 2001, pp. 171-175
Preparation and properties of MnSi1.7 on Si(001)
Authors: Teichert, S Sarkar, DK Schwendler, S Giesler, H Mogilatenko, A Falke, M Beddies, G Hinneberg, HJ
Citation: S. Teichert et al., Preparation and properties of MnSi1.7 on Si(001), MICROEL ENG, 55(1-4), 2001, pp. 227-232
Growth of MnSi1.7 on Si(001) by MBE
Authors: Teichert, S Schwendler, S Sarkar, DK Mogilatenko, A Falke, M Beddies, G Kleint, C Hinneberg, HJ
Citation: S. Teichert et al., Growth of MnSi1.7 on Si(001) by MBE, J CRYST GR, 227, 2001, pp. 882-887
Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates
Authors: Sarkar, DK Falke, M Giesler, H Teichert, S Beddies, G Hinneberg, HJ
Citation: Dk. Sarkar et al., Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates, J APPL PHYS, 89(11), 2001, pp. 6506-6513
Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi2 on Si(100) substrates
Authors: Sarkar, DK Rau, I Falke, M Giesler, H Teichert, S Beddies, G Hinneberg, HJ
Citation: Dk. Sarkar et al., Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi2 on Si(100) substrates, APPL PHYS L, 78(23), 2001, pp. 3604-3606
Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate
Authors: Sarkar, DK Falke, M Giesler, H Teichert, S Beddies, G Hinneberg, HJ
Citation: Dk. Sarkar et al., Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate, APPL PHYS A, 70(6), 2000, pp. 681-684
Thin films of CoSi2 on Si1-yCy substrate layers
Authors: Teichert, S Falke, M Giesler, H Sarkar, DK Beddies, G Hinneberg, HJ Lippert, G Griesche, J Osten, HJ
Citation: S. Teichert et al., Thin films of CoSi2 on Si1-yCy substrate layers, MICROEL ENG, 50(1-4), 2000, pp. 193-197
Plasma etching of ternary silicide top layers
Authors: Beddies, G Hortenbach, H Falke, M Brauer, J Sarkar, DK Teichert, S Hinneberg, HJ
Citation: G. Beddies et al., Plasma etching of ternary silicide top layers, MICROEL ENG, 50(1-4), 2000, pp. 199-209
Reactive ion etching of CoSi2 in a CF4/Ar plasma
Authors: Beddies, G Falke, M Teichert, S Gebhardt, B Hinneberg, HJ
Citation: G. Beddies et al., Reactive ion etching of CoSi2 in a CF4/Ar plasma, APPL SURF S, 139, 1999, pp. 370-375
Silicide reaction of Co with Si0.999C0.001
Authors: Teichert, S Falke, M Giesler, H Beddies, G Hinneberg, HJ Lippert, G Griesche, J Osten, HJ
Citation: S. Teichert et al., Silicide reaction of Co with Si0.999C0.001, SOL ST ELEC, 43(6), 1999, pp. 1051-1054
The growth of an intermediate CoSi phase during the formation of epitaxialCoSi2 by solid phase reaction
Authors: Falke, M Gebhardt, B Beddies, G Teichert, S Hinneberg, HJ
Citation: M. Falke et al., The growth of an intermediate CoSi phase during the formation of epitaxialCoSi2 by solid phase reaction, THIN SOL FI, 336(1-2), 1998, pp. 201-204
Allotaxy in the Ni-Si system
Authors: Teichert, S Falke, M Giesler, H Beddies, G Hinneberg, HJ
Citation: S. Teichert et al., Allotaxy in the Ni-Si system, THIN SOL FI, 336(1-2), 1998, pp. 222-226
Risultati: 1-12 |