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Results: 1-14 |
Results: 14
Characterization of near-surface traps in semiconductors: GaN
Authors: Look, DC Fang, ZQ
Citation: Dc. Look et Zq. Fang, Characterization of near-surface traps in semiconductors: GaN, APPL PHYS L, 79(1), 2001, pp. 84-86
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
Authors: Fang, ZQ Look, DC Jasinski, J Benamara, M Liliental-Weber, Z Molnar, RJ
Citation: Zq. Fang et al., Evolution of deep centers in GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 78(3), 2001, pp. 332-334
Metastability of defects in p-GaAs grown from a Ga-rich melt
Authors: Fang, ZQ Kim, JW Yu, PW
Citation: Zq. Fang et al., Metastability of defects in p-GaAs grown from a Ga-rich melt, APPL PHYS L, 78(17), 2001, pp. 2506-2508
Deep centers in a free-standing GaN layer
Authors: Fang, ZQ Look, DC Visconti, P Wang, DF Lu, CZ Yun, F Morkoc, H Park, SS Lee, KY
Citation: Zq. Fang et al., Deep centers in a free-standing GaN layer, APPL PHYS L, 78(15), 2001, pp. 2178-2180
Electrical measurements in GaN: Point defects and dislocations
Authors: Look, DC Fang, ZQ Polenta, L
Citation: Dc. Look et al., Electrical measurements in GaN: Point defects and dislocations, MRS I J N S, 5, 2000, pp. NIL_454-NIL_464
Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy
Authors: Fang, ZQ Look, DC Kim, W Morkoc, H
Citation: Zq. Fang et al., Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_810-NIL_815
Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy
Authors: Fang, ZQ Look, DC Lu, C Morkoc, H
Citation: Zq. Fang et al., Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy, J ELEC MAT, 29(9), 2000, pp. L19-L23
Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes
Authors: Fang, ZQ Reynolds, DC Look, DC
Citation: Zq. Fang et al., Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes, J ELEC MAT, 29(4), 2000, pp. 448-451
On the main irradiation-induced defect in GaN
Authors: Polenta, L Fang, ZQ Look, DC
Citation: L. Polenta et al., On the main irradiation-induced defect in GaN, APPL PHYS L, 76(15), 2000, pp. 2086-2088
Point defect characterization of GaN and ZnO
Authors: Look, DC Reynolds, DC Fang, ZQ Hemsky, JW Sizelove, JR Jones, RL
Citation: Dc. Look et al., Point defect characterization of GaN and ZnO, MAT SCI E B, 66(1-3), 1999, pp. 30-32
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
Authors: Fang, ZQ Xie, QH Look, DC Ehret, J Van Nostrand, JE
Citation: Zq. Fang et al., Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy, J ELEC MAT, 28(8), 1999, pp. L13-L16
Role of contacts in characterization of deep traps in semi-insulating GaAsby thermally stimulated current spectroscopy
Authors: Fang, ZQ Look, DC Pavlovic, M Desnica, UV
Citation: Zq. Fang et al., Role of contacts in characterization of deep traps in semi-insulating GaAsby thermally stimulated current spectroscopy, J ELEC MAT, 28(10), 1999, pp. L27-L30
On the energy level of EL2 in GaAs
Authors: Look, DC Fang, ZQ
Citation: Dc. Look et Zq. Fang, On the energy level of EL2 in GaAs, SOL ST ELEC, 43(7), 1999, pp. 1317-1319
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
Authors: Kim, W Botchkarev, AE Morkoc, H Fang, ZQ Look, DC Smith, DJ
Citation: W. Kim et al., Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy, J APPL PHYS, 84(12), 1998, pp. 6680-6685
Risultati: 1-14 |