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Results: 1-12 |
Results: 12
Helium implantation induced metal gettering in silicon at half of the projected ion range
Authors: Peeva, A Fichtner, PFP Behar, M Koegler, R Skorupa, W
Citation: A. Peeva et al., Helium implantation induced metal gettering in silicon at half of the projected ion range, NUCL INST B, 175, 2001, pp. 176-181
Formation of nanoclusters in Au-implanted bismuth tellurite
Authors: Kling, A da Silva, MF Soares, JC Fichtner, PFP Amaral, L Zawislak, F Foldvari, I Peter, A
Citation: A. Kling et al., Formation of nanoclusters in Au-implanted bismuth tellurite, NUCL INST B, 175, 2001, pp. 331-334
The effects of implantation temperature on He bubble formation in silicon
Authors: da Silva, DL Fichtner, PFP Peeva, A Behar, M Koegler, R Skorupa, W
Citation: Dl. Da Silva et al., The effects of implantation temperature on He bubble formation in silicon, NUCL INST B, 175, 2001, pp. 335-339
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication
Authors: Hollander, B Lenk, S Mantl, S Trinkaus, H Kirch, D Luysberg, M Hackbarth, T Herzog, HJ Fichtner, PFP
Citation: B. Hollander et al., Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication, NUCL INST B, 175, 2001, pp. 357-367
Defect evolution and characterization in He-implanted LiNbO3
Authors: Kling, A da Silva, MF Soares, JC Fichtner, PFP Amaral, L Zawislak, F
Citation: A. Kling et al., Defect evolution and characterization in He-implanted LiNbO3, NUCL INST B, 175, 2001, pp. 394-397
Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminum
Authors: Feldmann, G Fichtner, PFP Zawislak, FC
Citation: G. Feldmann et al., Nucleation and growth behavior of Cu-Al precipitates in He implanted and annealed aluminum, NUCL INST B, 175, 2001, pp. 432-436
He-induced cavity formation in silicon upon high-temperature implantation
Authors: Fichtner, PFP Peeva, A Behar, M Azevedo, GD Maltez, RL Koegler, R Skorupa, W
Citation: Pfp. Fichtner et al., He-induced cavity formation in silicon upon high-temperature implantation, NUCL INST B, 161, 2000, pp. 1038-1042
The effects of He implantation on the thermal stability of Cu-Al precipitates in aluminum
Authors: Feldmann, G Fichtner, PFP Zawislak, FC
Citation: G. Feldmann et al., The effects of He implantation on the thermal stability of Cu-Al precipitates in aluminum, NUCL INST B, 161, 2000, pp. 1075-1079
Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure
Authors: Peeva, A Kogler, R Werner, P de Mattos, AAD Fichtner, PFP Behar, M Skorupa, W
Citation: A. Peeva et al., Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure, NUCL INST B, 161, 2000, pp. 1090-1094
Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
Authors: Cima, CA Boudinov, H de Souza, JP Suprun-Belevich, Y Fichtner, PFP
Citation: Ca. Cima et al., Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures, J APPL PHYS, 88(4), 2000, pp. 1771-1775
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
Authors: Fichtner, PFP Behar, M Kaschny, JR Peeva, A Koegler, R Skorupa, W
Citation: Pfp. Fichtner et al., Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon, APPL PHYS L, 77(7), 2000, pp. 972-974
The effects of the annealing temperature on the formation of helium-filledstructures in silicon
Authors: Fichtner, PFP Kaschny, JR Behar, M Yankov, RA Mucklich, A Skorupa, W
Citation: Pfp. Fichtner et al., The effects of the annealing temperature on the formation of helium-filledstructures in silicon, NUCL INST B, 148(1-4), 1999, pp. 329-333
Risultati: 1-12 |