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Results: 1-13 |
Results: 13
Structural and optical properties of thick freestanding GaN templates
Authors: Freitas, JA Braga, GCB Moore, WJ Tischler, JG Culbertson, JC Fatemi, M Park, SS Lee, SK Park, Y
Citation: Ja. Freitas et al., Structural and optical properties of thick freestanding GaN templates, J CRYST GR, 231(3), 2001, pp. 322-328
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
Authors: Marchand, H Zhao, L Zhang, N Moran, B Coffie, R Mishra, UK Speck, JS DenBaars, SP Freitas, JA
Citation: H. Marchand et al., Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors, J APPL PHYS, 89(12), 2001, pp. 7846-7851
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
Authors: Moore, WJ Freitas, JA Braga, GCB Molnar, RJ Lee, SK Lee, KY Song, IJ
Citation: Wj. Moore et al., Identification of Si and O donors in hydride-vapor-phase epitaxial GaN, APPL PHYS L, 79(16), 2001, pp. 2570-2572
Material and n-p junction characteristics of As- and Sb-implanted SiC
Authors: Tucker, JB Rao, MV Holland, OW Chi, PH Braga, GCB Freitas, JA Papanicolaou, N
Citation: Jb. Tucker et al., Material and n-p junction characteristics of As- and Sb-implanted SiC, DIAM RELAT, 9(11), 2000, pp. 1887-1896
Optical characterization of amorphous hydrogenated carbon films
Authors: Chen, JQ Freitas, JA Meeker, DL
Citation: Jq. Chen et al., Optical characterization of amorphous hydrogenated carbon films, DIAM RELAT, 9(1), 2000, pp. 48-55
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
Authors: Wickenden, AE Koleske, DD Henry, RL Gorman, RJ Twigg, ME Fatemi, M Freitas, JA Moore, WJ
Citation: Ae. Wickenden et al., The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys, J ELEC MAT, 29(1), 2000, pp. 21-26
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
Authors: Klein, PB Binari, SC Freitas, JA Wickenden, AE
Citation: Pb. Klein et al., Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors, J APPL PHYS, 88(5), 2000, pp. 2843-2852
Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN
Authors: Glaser, ER Kennedy, TA Freitas, JA Shanabrook, BV Wickenden, AE Koleske, DD Henry, RL Obloh, H
Citation: Er. Glaser et al., Optically detected magnetic resonance of shallow donor - shallow acceptor and deep (2.8-3.2 eV) recombination from Mg-doped GaN, PHYSICA B, 274, 1999, pp. 58-62
Structural investigation of chalcogenide and chalcohalide glasses using Raman spectroscopy
Authors: Nguyen, VQ Sanghera, JS Freitas, JA Aggarwal, ID Lloyd, IK
Citation: Vq. Nguyen et al., Structural investigation of chalcogenide and chalcohalide glasses using Raman spectroscopy, J NON-CRYST, 248(2-3), 1999, pp. 103-114
Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors
Authors: Klein, PB Freitas, JA Binari, SC Wickenden, AE
Citation: Pb. Klein et al., Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors, APPL PHYS L, 75(25), 1999, pp. 4016-4018
Properties of Si-doped GaN films grown using multiple AlN interlayers
Authors: Koleske, DD Twigg, ME Wickenden, AE Henry, RL Gorman, RJ Freitas, JA Fatemi, M
Citation: Dd. Koleske et al., Properties of Si-doped GaN films grown using multiple AlN interlayers, APPL PHYS L, 75(20), 1999, pp. 3141-3143
Enhancement of electrical and structural properties of GaN layers grown onvicinal-cut, a-plane sapphire substrates
Authors: Fatemi, M Wickenden, AE Koleske, DD Twigg, ME Freitas, JA Henry, RL Gorman, RJ
Citation: M. Fatemi et al., Enhancement of electrical and structural properties of GaN layers grown onvicinal-cut, a-plane sapphire substrates, APPL PHYS L, 73(5), 1999, pp. 608-610
Risultati: 1-13 |