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Results: 1-15 |
Results: 15
Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system
Authors: Xia, XH Ashruf, CMA French, PJ Rappich, J Kelly, JJ
Citation: Xh. Xia et al., Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system, J PHYS CH B, 105(24), 2001, pp. 5722-5729
A requirement for the immediate early gene Zif268 in the expression of late LTP and long-term memories
Authors: Jones, MW Errington, ML French, PJ Fine, A Bliss, TVP Garel, S Charnay, P Bozon, B Laroche, S Davis, S
Citation: Mw. Jones et al., A requirement for the immediate early gene Zif268 in the expression of late LTP and long-term memories, NAT NEUROSC, 4(3), 2001, pp. 289-296
Subfield-specific immediate early gene expression associated with hippocampal long-term potentiation in vivo
Authors: French, PJ O'Connor, V Jones, MW Davis, S Errington, ML Voss, K Truchet, B Wotjak, C Stean, T Doyere, V Maroun, M Laroche, S Bliss, TVP
Citation: Pj. French et al., Subfield-specific immediate early gene expression associated with hippocampal long-term potentiation in vivo, EUR J NEURO, 13(5), 2001, pp. 968-976
Macroporous-based micromachining on full wafers
Authors: Ohji, H Izuo, S French, PJ Tsutsumi, K
Citation: H. Ohji et al., Macroporous-based micromachining on full wafers, SENS ACTU-A, 92(1-3), 2001, pp. 384-387
Galvanic etching for sensor fabrication
Authors: Ashruf, CMA French, PJ Sarro, PM Kazinczi, R Xia, XH Kelly, JJ
Citation: Cma. Ashruf et al., Galvanic etching for sensor fabrication, J MICROM M, 10(4), 2000, pp. 505-515
Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS)
Authors: Ohji, H Gennissens, PTJ French, PJ Tsutsumi, K
Citation: H. Ohji et al., Fabrication of a beam-mass structure using single-step electrochemical etching for micro structures (SEEMS), J MICROM M, 10(3), 2000, pp. 440-444
Initial pits for electrochemical etching in hydrofluoric acid
Authors: Ohji, H French, PJ Izuo, S Tsutsumi, K
Citation: H. Ohji et al., Initial pits for electrochemical etching in hydrofluoric acid, SENS ACTU-A, 85(1-3), 2000, pp. 390-394
The piezojunction effect in bipolar transistors at moderate stress levels:a theoretical and experimental study
Authors: Creemer, JF French, PJ
Citation: Jf. Creemer et Pj. French, The piezojunction effect in bipolar transistors at moderate stress levels:a theoretical and experimental study, SENS ACTU-A, 82(1-3), 2000, pp. 181-185
Fabrication of mechanical structures in p-type silicon using electrochemical etching
Authors: Ohji, H French, PJ Tsutsumi, K
Citation: H. Ohji et al., Fabrication of mechanical structures in p-type silicon using electrochemical etching, SENS ACTU-A, 82(1-3), 2000, pp. 254-258
Galvanic cell formation in silicon/metal contacts: The effect on silicon surface morphology
Authors: Xia, XH Ashruf, CMA French, PJ Kelly, JJ
Citation: Xh. Xia et al., Galvanic cell formation in silicon/metal contacts: The effect on silicon surface morphology, CHEM MATER, 12(6), 2000, pp. 1671-1678
Single step electrochemical etching in ammonium fluoride
Authors: Ohji, H French, PJ
Citation: H. Ohji et Pj. French, Single step electrochemical etching in ammonium fluoride, SENS ACTU-A, 74(1-3), 1999, pp. 109-112
Galvanic porous silicon formation without external contacts
Authors: Ashruf, CMA French, PJ Bressers, PMMC Kelly, JJ
Citation: Cma. Ashruf et al., Galvanic porous silicon formation without external contacts, SENS ACTU-A, 74(1-3), 1999, pp. 118-122
Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid
Authors: Ohji, H Trimp, PJ French, PJ
Citation: H. Ohji et al., Fabrication of free standing structure using single step electrochemical etching in hydrofluoric acid, SENS ACTU-A, 73(1-2), 1999, pp. 95-100
Molecular mechanisms of long-term potentiation in the insular cortex in vivo
Authors: Jones, MW French, PJ Bliss, TVP Rosenblum, K
Citation: Mw. Jones et al., Molecular mechanisms of long-term potentiation in the insular cortex in vivo, J NEUROSC, 19(21), 1999, pp. A1-A8
Formation of porous silicon using an ammonium fluoride based electrolyte for application as a sacrificial layer
Authors: Kuhl, M O'Halloran, GM Gennissen, PTJ French, PJ
Citation: M. Kuhl et al., Formation of porous silicon using an ammonium fluoride based electrolyte for application as a sacrificial layer, J MICROM M, 8(4), 1998, pp. 317-322
Risultati: 1-15 |