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Results: 1-24 |
Results: 24
Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells
Authors: Friedman, DJ Olson, JM
Citation: Dj. Friedman et Jm. Olson, Analysis of Ge junctions for GaInP/GaAs/Ge three-junction solar cells, PROG PHOTOV, 9(3), 2001, pp. 179-189
Band anticrossing in III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Xin, HP Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
Alternative boron precursors for BGaAs epitaxy
Authors: Geisz, JF Friedman, DJ Kurtz, S Reedy, RC Barber, G
Citation: Jf. Geisz et al., Alternative boron precursors for BGaAs epitaxy, J ELEC MAT, 30(11), 2001, pp. 1387-1391
Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301
Authors: Perkins, JD Mascarenhas, A Geisz, JF Friedman, DJ
Citation: Jd. Perkins et al., Conduction-band-resonant nitrogen-induced levels in GaAs1-xNx with x < 0.03 - art. no. 121301, PHYS REV B, 6412(12), 2001, pp. 1301
Epitaxial growth of BGaAs and BGaInAs by MOCVD
Authors: Geisz, JF Friedman, DJ Kurtz, S Olson, JM Swartzlander, AB Reedy, RC Norman, AG
Citation: Jf. Geisz et al., Epitaxial growth of BGaAs and BGaInAs by MOCVD, J CRYST GR, 225(2-4), 2001, pp. 372-376
Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000)
Authors: Ahrenkiel, RK Johnston, SW Keyes, BM Friedman, DJ Vernon, SM
Citation: Rk. Ahrenkiel et al., Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000), APPL PHYS L, 78(4), 2001, pp. 559-559
Reconstructive surgery of the pelvis after surgery for rectal cancer
Authors: Small, T Friedman, DJ Sultan, M
Citation: T. Small et al., Reconstructive surgery of the pelvis after surgery for rectal cancer, SEM SURG ON, 18(3), 2000, pp. 259-264
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Nauka, C
Citation: W. Shan et al., Effect of nitrogen on the electronic band structure of group III-N-V alloys, PHYS REV B, 62(7), 2000, pp. 4211-4214
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
Authors: Yu, KM Walukiewicz, W Shan, W Ager, JW Wu, J Haller, EE Geisz, JF Friedman, DJ Olson, JM
Citation: Km. Yu et al., Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys, PHYS REV B, 61(20), 2000, pp. R13337-R13340
Race/ethnicity and OMB directive 15: Implications for state public health practice
Authors: Friedman, DJ Cohen, BB Averbach, AR Norton, JM
Citation: Dj. Friedman et al., Race/ethnicity and OMB directive 15: Implications for state public health practice, AM J PUB HE, 90(11), 2000, pp. 1714-1719
Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells
Authors: Friedman, DJ Norman, AG Geisz, JF Kurtz, SR
Citation: Dj. Friedman et al., Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells, J CRYST GR, 208(1-4), 2000, pp. 11-17
Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition
Authors: Ahrenkiel, RK Johnston, SW Keyes, BM Friedman, DJ
Citation: Rk. Ahrenkiel et al., Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition, APPL PHYS L, 77(23), 2000, pp. 3794-3796
Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells
Authors: Herndon, MK Bradford, WC Collins, RT Hawkins, BE Kuech, TF Friedman, DJ Kurtz, SR
Citation: Mk. Herndon et al., Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells, APPL PHYS L, 77(1), 2000, pp. 100-102
Evidence of an oxygen recombination center in p(+)-n GaInNAs solar cells
Authors: Balcioglu, A Ahrenkiel, RK Friedman, DJ
Citation: A. Balcioglu et al., Evidence of an oxygen recombination center in p(+)-n GaInNAs solar cells, APPL PHYS L, 76(17), 2000, pp. 2397-2399
BGaInAs alloys lattice matched to GaAs
Authors: Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Reedy, RC Swartzlander, AB Keyes, BM Norman, AG
Citation: Jf. Geisz et al., BGaInAs alloys lattice matched to GaAs, APPL PHYS L, 76(11), 2000, pp. 1443-1445
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Impact of multiple births on low birthweight - Massachusetts, 1989-1996 (Reprinted from vol 48, pg 289, 1999)
Authors: Cohen, BB Friedman, DJ Zhang, Z Trudeau, EB Walker, DK Anderka, M Fogerty, S Franklin, S McKenna, PA
Citation: Bb. Cohen et al., Impact of multiple births on low birthweight - Massachusetts, 1989-1996 (Reprinted from vol 48, pg 289, 1999), J AM MED A, 281(21), 1999, pp. 1980-1981
Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2
Authors: Zhang, Y Mascarenhas, A Ahrenkiel, SP Friedman, DJ Geisz, JF Olson, JM
Citation: Y. Zhang et al., Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2, SOL ST COMM, 109(2), 1999, pp. 99-103
Band anticrossing in GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Band anticrossing in GaInNAs alloys, PHYS REV L, 82(6), 1999, pp. 1221-1224
Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03
Authors: Perkins, JD Mascarenhas, A Zhang, Y Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: Jd. Perkins et al., Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03, PHYS REV L, 82(16), 1999, pp. 3312-3315
Effect of nitrogen on the band structure of GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Effect of nitrogen on the band structure of GaInNAs alloys, J APPL PHYS, 86(4), 1999, pp. 2349-2351
Photocurrent of 1 eV GaInNAs lattice-matched to GaAs
Authors: Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Keyes, BM
Citation: Jf. Geisz et al., Photocurrent of 1 eV GaInNAs lattice-matched to GaAs, J CRYST GR, 195(1-4), 1998, pp. 401-408
1-eV solar cells with GaInNAs active layer
Authors: Friedman, DJ Geisz, JF Kurtz, SR Olson, JM
Citation: Dj. Friedman et al., 1-eV solar cells with GaInNAs active layer, J CRYST GR, 195(1-4), 1998, pp. 409-415
Nonlinear dependence of N incorporation on In content in GaInNAs
Authors: Friedman, DJ Geisz, JF Kurtz, SR Olson, JM Reedy, R
Citation: Dj. Friedman et al., Nonlinear dependence of N incorporation on In content in GaInNAs, J CRYST GR, 195(1-4), 1998, pp. 438-443
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