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Results: 26-50/53
Authors:
Aratani, M
Nagashima, K
Iijima, T
Mizuhira, M
Funakubo, H
Citation: M. Aratani et al., Preparation of Al-doped PbTiO3 thin films by metalorganic chemical vapor deposition and their characterization, JPN J A P 1, 39(6A), 2000, pp. 3591-3595
Authors:
Higashi, N
Okuda, N
Funakubo, H
Citation: N. Higashi et al., Metalorganic chemical vapor deposition of conductive CaRuO3 thin films, JPN J A P 1, 39(5A), 2000, pp. 2780-2783
Authors:
Ishikawa, K
Saiki, A
Funakubo, H
Citation: K. Ishikawa et al., Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition, JPN J A P 1, 39(4B), 2000, pp. 2102-2109
Authors:
Okuda, N
Saito, K
Funakubo, H
Citation: N. Okuda et al., Low-temperature deposition of SrRuO3 thin film prepared by metalorganic chemical vapor deposition, JPN J A P 1, 39(2A), 2000, pp. 572-576
Authors:
Nagashima, K
Funakubo, H
Citation: K. Nagashima et H. Funakubo, Composition control of Pb(ZrxTi1-x)O-3 thin films prepared by metalorganicchemical vapor deposition, JPN J A P 1, 39(1), 2000, pp. 212-216
Authors:
Mitsuya, M
Nukaga, N
Funakubo, H
Citation: M. Mitsuya et al., Direct preparation of crystalline SrBi2(Ta1-xNbx)(2)O-9 thin films by thermal metalorganic chemical vapor deposition at low temperature, JPN J A P 2, 39(8A), 2000, pp. L822-L824
Authors:
Mitsuya, M
Ishikawa, K
Nukaga, N
Funakubo, H
Citation: M. Mitsuya et al., Preparation and characterization of SrBi2(Ta1-xNbx)(2)O-9 thin films by metalorganic chemical vapor deposition from two organometallic source bottles, JPN J A P 2, 39(6B), 2000, pp. L620-L622
Authors:
Nagashima, K
Aratani, M
Funakubo, H
Citation: K. Nagashima et al., Improvement of property of Pb(ZrxTi1-x)O-3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition, JPN J A P 2, 39(10A), 2000, pp. L996-L998
Authors:
Funakubo, H
Mitsuya, M
Nukaga, N
Ishikawa, K
Citation: H. Funakubo et al., MOCVD preparation of SBTN thin films from two organometallic source bottles, INTEGR FERR, 30(1-4), 2000, pp. 225-234
Preparation of bismuth layer-structured ferroelectric thin films by MOCVD and their characterization
Authors:
Funakubo, H
Ishikawa, K
Watanabe, T
Mitsuya, M
Nukaga, N
Citation: H. Funakubo et al., Preparation of bismuth layer-structured ferroelectric thin films by MOCVD and their characterization, ADV MAT OPT, 10(3-5), 2000, pp. 193-200
Authors:
Nagashima, K
Funakubo, H
Seki, S
Sawada, Y
Miura, Y
Higuchi, N
Matchida, H
Citation: K. Nagashima et al., Thermal stability of Pb(C11H19O2)(2) used as the lead source in MOCVD, CHEM VAPOR, 6(6), 2000, pp. 311-314
Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films
Authors:
Kadokura, N
Okuhara, Y
Mitsuya, M
Funakubo, H
Citation: N. Kadokura et al., Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films, CHEM VAPOR, 6(5), 2000, pp. 225
Authors:
Funakubo, H
Nagashima, K
Shinozaki, K
Mizutani, N
Citation: H. Funakubo et al., Comparison of deposition behavior of Pb(Zr,Ti)O-3 films and its end-member-oxide films prepared by MOCVD, THIN SOL FI, 368(2), 2000, pp. 261-265
Authors:
Ishikawa, K
Funakubo, H
Saito, K
Suzuki, T
Nishi, Y
Fujimoto, M
Citation: K. Ishikawa et al., Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films, J APPL PHYS, 87(11), 2000, pp. 8018-8023
Authors:
Nukaga, N
Ishikawa, K
Funakubo, H
Citation: N. Nukaga et al., Effect of deposition temperature and composition on the microstructure andelectrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition, JPN J A P 1, 38(9B), 1999, pp. 5428-5431
Authors:
Jimbo, T
Sano, H
Takahashi, Y
Funakubo, H
Tokumitsu, E
Ishiwara, H
Citation: T. Jimbo et al., Preparation of SrBi2Ta2O9 thin films by liquid-delivery metalorganic chemical vapor deposition using a double alcoholate source, JPN J A P 1, 38(11), 1999, pp. 6456-6461
Authors:
Funakubo, H
Nukaga, N
Ishikawa, K
Watanabe, T
Citation: H. Funakubo et al., Preparation of SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition from two new liquid organometallic sources, JPN J A P 2, 38(2B), 1999, pp. L199-L201
Authors:
Suzuki, T
Nishi, Y
Fujimoto, M
Ishikawa, K
Funakubo, H
Citation: T. Suzuki et al., Interface and defect structures of (001)-oriented SrBi2Ta2O9 thin film epitaxially grown on (001) SrTiO3 single crystal, JPN J A P 2, 38(11A), 1999, pp. L1261-L1264
Authors:
Suzuki, T
Nishi, Y
Fujimoto, M
Ishikawa, K
Funakubo, H
Citation: T. Suzuki et al., Interface and domain structures of (116)-oriented SrBi2Ta2O9 thin film epitaxially grown on (110) SrTiO3 single crystal, JPN J A P 2, 38(11A), 1999, pp. L1265-L1267
Authors:
Saiki, A
Funakubo, H
Mizutani, N
Shinozaki, K
Bak, T
Nowotny, J
Rekas, M
Sorrel, CC
Citation: A. Saiki et al., Charge transfer between oxygen and zirconia, J THERM ANA, 57(3), 1999, pp. 875-881
Authors:
Jimbo, T
Sano, H
Takahashi, Y
Funakubo, H
Tokumitsu, E
Ishiwara, H
Citation: T. Jimbo et al., Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate, INTEGR FERR, 26(1-4), 1999, pp. 811-819
Authors:
Matsuzaki, T
Funakubo, H
Citation: T. Matsuzaki et H. Funakubo, Preparation and characterization of Pb(Nb,Ti)O-3 thin films by metalorganic chemical vapor deposition, J APPL PHYS, 86(8), 1999, pp. 4559-4564
Authors:
Funakubo, H
Nukaga, N
Ishikawa, K
Kokubun, H
Machida, H
Shinozaki, K
Mizutani, N
Citation: H. Funakubo et al., Preparation of bi-layered ferroelectric thin film by thermal MOCVD, FERROELECTR, 232(1-4), 1999, pp. 1003-1008
Authors:
Ishikawa, K
Funakubo, H
Citation: K. Ishikawa et H. Funakubo, Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition, APPL PHYS L, 75(13), 1999, pp. 1970-1972
Authors:
Matsuzaki, T
Okuda, N
Shinozaki, K
Mizutani, N
Funakubo, H
Citation: T. Matsuzaki et al., Y2O3-stabilized ZrO2 thin films prepared by metalorganic chemical vapor deposition, JPN J A P 1, 37(11), 1998, pp. 6229-6232