AAAAAA

   
Results: 1-24 |
Results: 24
LOW-FREQUENCY NOISE IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: KUKSENKOV DV TEMKIN H GASKA R YANG JW
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, IEEE electron device letters, 19(7), 1998, pp. 222-224
SELF-HEATING IN HIGH-POWER ALGAN-GAN HFETS
Authors: GASKA R OSINSKY A YANG JW SHUR MS
Citation: R. Gaska et al., SELF-HEATING IN HIGH-POWER ALGAN-GAN HFETS, IEEE electron device letters, 19(3), 1998, pp. 89-91
HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/
Authors: CHEN Q YANG JW GASKA R KHAN MA SHUR MS SULLIVAN GJ SAILOR AL HIGGINGS JA PING AT ADESIDA I
Citation: Q. Chen et al., HIGH-POWER MICROWAVE 0.25-MU-M GATE DOPED-CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/, IEEE electron device letters, 19(2), 1998, pp. 44-46
LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS, Journal of applied physics, 83(4), 1998, pp. 2142-2146
AVALANCHE BREAKDOWN AND BREAKDOWN LUMINESCENCE IN P-PI-N GAN DIODES
Authors: OSINSKY A SHUR MS GASKA R CHEN Q
Citation: A. Osinsky et al., AVALANCHE BREAKDOWN AND BREAKDOWN LUMINESCENCE IN P-PI-N GAN DIODES, Electronics Letters, 34(7), 1998, pp. 691-692
LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES
Authors: KUKSENKOV DV GIUDICE GE TEMKIN H GASKA R PING A ADESIDA I
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES, Electronics Letters, 34(23), 1998, pp. 2274-2276
IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS ON SAPPHIRE SUBSTRATES
Authors: DYAKONOVA N DICKENS A SHUR MS GASKA R
Citation: N. Dyakonova et al., IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS ON SAPPHIRE SUBSTRATES, Electronics Letters, 34(17), 1998, pp. 1699-1700
ALGAN GAN HIGH-ELECTRON-MOBILITY FIELD-EFFECT TRANSISTORS WITH LOW 1/F NOISE/
Authors: LEVINSHTEIN ME RUMYANTSEV SL GASKA R YANG JW SHUR MS
Citation: Me. Levinshtein et al., ALGAN GAN HIGH-ELECTRON-MOBILITY FIELD-EFFECT TRANSISTORS WITH LOW 1/F NOISE/, Applied physics letters, 73(8), 1998, pp. 1089-1091
ELECTRON-TRANSPORT IN ALGAN-GAN HETEROSTRUCTURES GROWN ON 6H-SIC SUBSTRATES
Authors: GASKA R YANG JW OSINSKY A CHEN Q KHAN MA ORLOV AO SNIDER GL SHUR MS
Citation: R. Gaska et al., ELECTRON-TRANSPORT IN ALGAN-GAN HETEROSTRUCTURES GROWN ON 6H-SIC SUBSTRATES, Applied physics letters, 72(6), 1998, pp. 707-709
VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111)
Authors: OSINSKY A GANGOPADHYAY S YANG JW GASKA R KUKSENKOV D TEMKIN H SHMAGIN IK CHANG YC MUTH JF KOLBAS RM
Citation: A. Osinsky et al., VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111), Applied physics letters, 72(5), 1998, pp. 551-553
LOW-FREQUENCY NOISE IN GAN GAALN HETEROJUNCTIONS/
Authors: LEVINSHTEIN ME PASCAL F CONTRERAS S KNAP W RUMYANTSEV SL GASKA R YANG JW SHUR MS
Citation: Me. Levinshtein et al., LOW-FREQUENCY NOISE IN GAN GAALN HETEROJUNCTIONS/, Applied physics letters, 72(23), 1998, pp. 3053-3055
TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: DYAKONOVA N DICKENS A SHUR MS GASKA R YANG JW
Citation: N. Dyakonova et al., TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Applied physics letters, 72(20), 1998, pp. 2562-2564
ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION, Applied physics letters, 72(11), 1998, pp. 1365-1367
THE INFLUENCE OF THE DEFORMATION ON THE 2-DIMENSIONAL ELECTRON-GAS DENSITY IN GAN-ALGAN HETEROSTRUCTURES
Authors: GASKA R YANG JW BYKHOVSKI AD SHUR MS KAMINSKI VV SOLOVIOV SM
Citation: R. Gaska et al., THE INFLUENCE OF THE DEFORMATION ON THE 2-DIMENSIONAL ELECTRON-GAS DENSITY IN GAN-ALGAN HETEROSTRUCTURES, Applied physics letters, 72(1), 1998, pp. 64-66
HIGH-TEMPERATURE PERFORMANCE OF ALGAN GAN HFETS ON SIC SUBSTRATES/
Authors: GASKA R CHEN Q YANG J OSINSKY A KHAN MA SHUR MS
Citation: R. Gaska et al., HIGH-TEMPERATURE PERFORMANCE OF ALGAN GAN HFETS ON SIC SUBSTRATES/, IEEE electron device letters, 18(10), 1997, pp. 492-494
MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/
Authors: CHEN Q GASKA R KHAN MA SHUR MS PING A ADESIDA I BURM J SCHAFF WJ EASTMAN LF
Citation: Q. Chen et al., MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/, Electronics Letters, 33(7), 1997, pp. 637-639
ALGAN-GAN HETEROSTRUCTURE FETS WITH OFFSET GATE DESIGN
Authors: GASKA R CHEN Q YANG J KHAN MA SHUR MS PING A ADESIDA I
Citation: R. Gaska et al., ALGAN-GAN HETEROSTRUCTURE FETS WITH OFFSET GATE DESIGN, Electronics Letters, 33(14), 1997, pp. 1255-1257
PIEZORESISTIVE EFFECT IN GAN-ALN-GAN STRUCTURES
Authors: GASKA R YANG JW BYKHOVSKI AD SHUR MS KAMINSKII VV SOLOVIOV S
Citation: R. Gaska et al., PIEZORESISTIVE EFFECT IN GAN-ALN-GAN STRUCTURES, Applied physics letters, 71(26), 1997, pp. 3817-3819
PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: GASKA R YANG JW OSINSKY A BYKHOVSKI AD SHUR MS
Citation: R. Gaska et al., PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 71(25), 1997, pp. 3673-3675
LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS
Authors: OSINSKY A GANGOPADHYAY S GASKA R WILLIAMS B KHAN MA KUKSENKOV D TEMKIN H
Citation: A. Osinsky et al., LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS, Applied physics letters, 71(16), 1997, pp. 2334-2336
ANALYSIS OF ANGLE-RESOLVED PHOTOEMISSION DATA OF PBS(001) SURFACES WITHIN THE DIRECT-TRANSITION MODEL
Authors: BOTTNER R RATZ S SCHROEDER N MARQUARDT S GERHARDT U GASKA R VAITKUS J
Citation: R. Bottner et al., ANALYSIS OF ANGLE-RESOLVED PHOTOEMISSION DATA OF PBS(001) SURFACES WITHIN THE DIRECT-TRANSITION MODEL, Physical review. B, Condensed matter, 53(15), 1996, pp. 10336-10343
HOT-ELECTRON OVERCOOLING AND INTERSUBBAND POPULATION-INVERSION IN QUANTUM WIRES
Authors: GASKA R MICKEVICIUS R MITIN V GRUBIN HL
Citation: R. Gaska et al., HOT-ELECTRON OVERCOOLING AND INTERSUBBAND POPULATION-INVERSION IN QUANTUM WIRES, Semiconductor science and technology, 9(5), 1994, pp. 886-888
HOT PHONONS IN QUANTUM WIRES
Authors: MICKEVICIUS R GASKA R MITIN V STROSCIO MA IAFRATE GJ
Citation: R. Mickevicius et al., HOT PHONONS IN QUANTUM WIRES, Semiconductor science and technology, 9(5), 1994, pp. 889-892
HOT-ELECTRON RELAXATION DYNAMICS IN QUANTUM WIRES
Authors: GASKA R MICKEVICIUS R MITIN V STROSCIO MA IAFRATE GJ
Citation: R. Gaska et al., HOT-ELECTRON RELAXATION DYNAMICS IN QUANTUM WIRES, Journal of applied physics, 76(2), 1994, pp. 1021-1028
Risultati: 1-24 |