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Results:
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Results: 10
Authors:
GRIGORAS K
MAJOR A
SIMKIENE I
GAUBAS E
Citation: K. Grigoras et al., APPLICATION OF DOPED SILICON-OXIDE FILMS IN SOLAR-CELL TECHNOLOGY, Semiconductor science and technology, 13(5), 1998, pp. 517-522
Authors:
SIMOEN E
VANHELLEMONT J
ALAERTS A
CLAEYS C
GAUBAS E
KANIAVA A
OHYAMA H
SUNAGA H
NAHSIYAMA I
SKORUPA W
Citation: E. Simoen et al., PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES, Radiation physics and chemistry, 50(5), 1997, pp. 417-422
Authors:
GAUBAS E
VANHELLEMONT J
SIMOEN E
CLAUWS P
KRANER HW
VILKELIS G
SMILGA AP
Citation: E. Gaubas et al., STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS, Semiconductor science and technology, 12(9), 1997, pp. 1092-1099
Authors:
GAUBAS E
KANIAVA A
VAITKUS J
Citation: E. Gaubas et al., INVESTIGATION OF RECOMBINATION PARAMETERS IN SILICON STRUCTURES BY INFRARED AND MICROWAVE TRANSIENT ABSORPTION TECHNIQUES, Semiconductor science and technology, 12(1), 1997, pp. 1-10
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
KANIAVA A
GAUBAS E
Citation: E. Simoen et al., THE RESPONSE OF SI P-N-JUNCTION DIODES TO PROTON IRRADIATION, Semiconductor science and technology, 11(10), 1996, pp. 1434-1442
Authors:
GAUBAS E
KANIAVA A
Citation: E. Gaubas et A. Kaniava, DETERMINATION OF RECOMBINATION PARAMETERS IN SILICON-WAFERS BY TRANSIENT MICROWAVE-ABSORPTION, Review of scientific instruments, 67(6), 1996, pp. 2339-2345
Authors:
GAUBAS E
VANHELLEMONT J
Citation: E. Gaubas et J. Vanhellemont, A SIMPLE TECHNIQUE FOR THE SEPARATION OF BULK AND SURFACE RECOMBINATION PARAMETERS IN SILICON, Journal of applied physics, 80(11), 1996, pp. 6293-6297
Authors:
KANIAVA A
GAUBAS E
VAITKUS J
VANHELLEMONT J
ROTONDARO ALP
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON, Materials science and technology, 11(7), 1995, pp. 670-675
Authors:
KANIAVA A
ROTONDARO ALP
VANHELLEMONT J
MENCZIGAR U
GAUBAS E
Citation: A. Kaniava et al., RECOMBINATION ACTIVITY OF IRON-RELATED COMPLEXES IN SILICON STUDIED BY TEMPERATURE-DEPENDENT CARRIER LIFETIME MEASUREMENTS, Applied physics letters, 67(26), 1995, pp. 3930-3932
Authors:
VANHELLEMONT J
SIMOEN E
CLAEYS C
KANIAVA A
GAUBAS E
BOSMAN G
JOHLANDER B
ADAMS L
CLAUWS P
Citation: J. Vanhellemont et al., ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1924-1931
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