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Results: 1-19 |
Results: 19
THERMAL-STABILITY OF HEAVILY TELLURIUM-DOPED INP GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
Authors: ANTONELL MJ ABERNATHY CR KRISHNAMOORTHY V GEDRIDGE RW HAYNES TE
Citation: Mj. Antonell et al., THERMAL-STABILITY OF HEAVILY TELLURIUM-DOPED INP GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 26(11), 1997, pp. 1283-1286
CHEMICAL BEAM EPITAXY OF INP WITHOUT PRECRACKING USING TERTIARYBUTYLBIS(DIMETHYLAMINO)PHOSPHINE
Authors: RYU HH SADWICK LP STRINGFELLOW GB GEDRIDGE RW GROSHENS TJ
Citation: Hh. Ryu et al., CHEMICAL BEAM EPITAXY OF INP WITHOUT PRECRACKING USING TERTIARYBUTYLBIS(DIMETHYLAMINO)PHOSPHINE, Journal of crystal growth, 172(1-2), 1997, pp. 1-4
LOW-PRESSURE PYROLYSIS STUDIES OF A NEW PHOSPHORUS PRECURSOR - TERTIARYBUTYLBIS(DIMETHYLAMINO)PHOSPHINE
Authors: HILL CW GEDRIDGE RW GROSHENS TJ STRINGFELLOW GB SADWICK LP
Citation: Cw. Hill et al., LOW-PRESSURE PYROLYSIS STUDIES OF A NEW PHOSPHORUS PRECURSOR - TERTIARYBUTYLBIS(DIMETHYLAMINO)PHOSPHINE, Journal of electronic materials, 25(9), 1996, pp. 1434-1438
CO-PYROLYSIS OF DIPSBH AND TMIN
Authors: CHUN YS STRINGFELLOW GB GEDRIDGE RW
Citation: Ys. Chun et al., CO-PYROLYSIS OF DIPSBH AND TMIN, Journal of electronic materials, 25(9), 1996, pp. 1539-1544
EPITAXIAL DYSPROSIUM PHOSPHIDE GROWN BY GAS-SOURCE AND SOLID-SOURCE MBE ON GALLIUM-ARSENIDE SUBSTRATES
Authors: SADWICK LP LEE PP PATEL M NIKOLS M HWU RJ SHIELD JE STREIT DC BREHMER D MCCORMICK K ALLEN SJ GEDRIDGE RW
Citation: Lp. Sadwick et al., EPITAXIAL DYSPROSIUM PHOSPHIDE GROWN BY GAS-SOURCE AND SOLID-SOURCE MBE ON GALLIUM-ARSENIDE SUBSTRATES, Journal of crystal growth, 164(1-4), 1996, pp. 285-290
TELLURIUM DOPING OF INP USING TRIISOPROPYLINDIUM-DIISOPROPYLTELLURIUM(TIPIN-DIPTE)
Authors: ANTONELL MJ ABERNATHY CR GEDRIDGE RW
Citation: Mj. Antonell et al., TELLURIUM DOPING OF INP USING TRIISOPROPYLINDIUM-DIISOPROPYLTELLURIUM(TIPIN-DIPTE), Journal of crystal growth, 164(1-4), 1996, pp. 420-424
TE-125, C-13 AND H-1-NMR CHARACTERIZATION OF A SERIES OF DIORGANOTELLURIUM(II) AND TETRAORGANOTELLURIUM(IV) COMPOUNDS
Authors: GEDRIDGE RW HIGA KT NISSAN RA
Citation: Rw. Gedridge et al., TE-125, C-13 AND H-1-NMR CHARACTERIZATION OF A SERIES OF DIORGANOTELLURIUM(II) AND TETRAORGANOTELLURIUM(IV) COMPOUNDS, Magnetic resonance in chemistry, 33(6), 1995, pp. 441-448
INSB, GASB, AND GAINSB GROWN USING TRISDIMETHYLAMINOANTIMONY
Authors: SHIN J HSU Y HSU TC STRINGFELLOW GB GEDRIDGE RW
Citation: J. Shin et al., INSB, GASB, AND GAINSB GROWN USING TRISDIMETHYLAMINOANTIMONY, Journal of electronic materials, 24(11), 1995, pp. 1563-1569
SYNTHESIS, CHARACTERIZATION, AND SOLID-STATE STRUCTURES OF THE 14-ELECTRON OPEN METALLOCENES M[1,5-(ME(3)SI)(2)C5H5](2) (M=TI OR ZR)
Authors: GEDRIDGE RW ARIF AM ERNST RD
Citation: Rw. Gedridge et al., SYNTHESIS, CHARACTERIZATION, AND SOLID-STATE STRUCTURES OF THE 14-ELECTRON OPEN METALLOCENES M[1,5-(ME(3)SI)(2)C5H5](2) (M=TI OR ZR), Journal of organometallic chemistry, 501(1-2), 1995, pp. 95-100
GROWTH OF GASB USING TRISDIMETHYLAMINOANTIMONY
Authors: SHIN J VERMA A STRINGFELLOW GB GEDRIDGE RW
Citation: J. Shin et al., GROWTH OF GASB USING TRISDIMETHYLAMINOANTIMONY, Journal of crystal growth, 151(1-2), 1995, pp. 1-8
ROOM-TEMPERATURE MOCVD OF SB2TE3 FILMS AND SOLUTION PRECIPITATION OF M2TE3 (M=SB, BI) POWDERS VIA A NOVEL (N,N-DIMETHYLAMINO)TRIMETHYLSILANE ELIMINATION-REACTION
Authors: GROSHENS TJ GEDRIDGE RW LOWEMA CK
Citation: Tj. Groshens et al., ROOM-TEMPERATURE MOCVD OF SB2TE3 FILMS AND SOLUTION PRECIPITATION OF M2TE3 (M=SB, BI) POWDERS VIA A NOVEL (N,N-DIMETHYLAMINO)TRIMETHYLSILANE ELIMINATION-REACTION, Chemistry of materials, 6(6), 1994, pp. 727-729
PYROLYSIS OF DIISOPROPYLANTIMONY HYDRIDE - A NEW PRECURSOR FOR ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: HILL CW TAO M GEDRIDGE RW STRINGFELLOW GB
Citation: Cw. Hill et al., PYROLYSIS OF DIISOPROPYLANTIMONY HYDRIDE - A NEW PRECURSOR FOR ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 23(5), 1994, pp. 447-451
TRISDIMETHYLAMINOANTIMONY - A NEW SB SOURCE FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
Authors: SHIN J VERMA A STRINGFELLOW GB GEDRIDGE RW
Citation: J. Shin et al., TRISDIMETHYLAMINOANTIMONY - A NEW SB SOURCE FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB, Journal of crystal growth, 143(1-2), 1994, pp. 15-21
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SB FILMS USING (I-PR)2SBH
Authors: GEDRIDGE RW LEE KE LOWEMA C
Citation: Rw. Gedridge et al., LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SB FILMS USING (I-PR)2SBH, Chemistry of materials, 5(7), 1993, pp. 979-982
INDIUM DOPING OF HGCDTE GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION-DIRECT ALLOY GROWTH USING TRIISOPROPYLINDIUM AND DIISOPROPYLTELLURIUM.TRIISOPROPYLINDIUM ADDUCT
Authors: KORENSTEIN R HALLOCK PH LEE DL SULLIVAN E GEDRIDGE RW HIGA KT
Citation: R. Korenstein et al., INDIUM DOPING OF HGCDTE GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION-DIRECT ALLOY GROWTH USING TRIISOPROPYLINDIUM AND DIISOPROPYLTELLURIUM.TRIISOPROPYLINDIUM ADDUCT, Journal of electronic materials, 22(8), 1993, pp. 853-857
A NEW N-TYPE DOPING PRECURSOR FOR MOCVD-IMP GROWTH OF DETECTOR QUALITY MCT
Authors: IRVINE SJC BAJAJ J BUBULAC LO LIN WP GEDRIDGE RW HIGA KT
Citation: Sjc. Irvine et al., A NEW N-TYPE DOPING PRECURSOR FOR MOCVD-IMP GROWTH OF DETECTOR QUALITY MCT, Journal of electronic materials, 22(8), 1993, pp. 859-864
SYNTHESES, CHARACTERIZATION, AND STRUCTURAL STUDIES OF LEWIS BASE ADDUCTS OF HALF-OPEN VANADOCENES, V(C5H5)(PDL)(L)
Authors: GEDRIDGE RW HUTCHINSON JP RHEINGOLD AL ERNST RD
Citation: Rw. Gedridge et al., SYNTHESES, CHARACTERIZATION, AND STRUCTURAL STUDIES OF LEWIS BASE ADDUCTS OF HALF-OPEN VANADOCENES, V(C5H5)(PDL)(L), Organometallics, 12(5), 1993, pp. 1553-1558
SYNTHESIS AND CHARACTERIZATION OF NEW MONOMERIC DIALKYLINDIUM AMIDES
Authors: SIMPSON KM GEDRIDGE RW HIGA KT
Citation: Km. Simpson et al., SYNTHESIS AND CHARACTERIZATION OF NEW MONOMERIC DIALKYLINDIUM AMIDES, Journal of organometallic chemistry, 456(1), 1993, pp. 31-34
DIISOPROPYLANTIMONYHYDRIDE (DIPSBH) FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB
Authors: SHIN J CHIU K STRINGFELLOW GB GEDRIDGE RW
Citation: J. Shin et al., DIISOPROPYLANTIMONYHYDRIDE (DIPSBH) FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSB, Journal of crystal growth, 132(3-4), 1993, pp. 371-376
Risultati: 1-19 |