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Results: 76-94/94
Authors:
BALESTRA F
JOMAAH J
GHIBAUDO G
FAYNOT O
AUBERTONHERVE AJ
GIFFARD B
Citation: F. Balestra et al., ANALYSIS OF THE LATCH AND BREAKDOWN PHENOMENA IN N AND P CHANNEL THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 109-112
Authors:
FIKRY W
GHIBAUDO G
DUTOIT M
Citation: W. Fikry et al., TEMPERATURE-DEPENDENCE OF DRAIN-INDUCED BARRIER LOWERING IN DEEP-SUBMICROMETER MOSFETS, Electronics Letters, 30(11), 1994, pp. 911-912
Authors:
RAIS K
BALESTRA F
GHIBAUDO G
Citation: K. Rais et al., TEMPERATURE-DEPENDENCE OF GATE INDUCED DRAIN LEAKAGE CURRENT IN SILICON CMOS DEVICES, Electronics Letters, 30(1), 1994, pp. 32-34
Authors:
ROUXDITBUISSON O
GHIBAUDO G
BRINI J
Citation: O. Rouxditbuisson et al., SENSITIVE DIFFERENTIAL METHOD FOR THE EXTRACTION OF THE MOBILITY VARIATION IN UNIFORMLY DEGRADED MOS-TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 140(2), 1993, pp. 123-126
ELECTRICAL CHARACTERIZATION VERSUS TEMPERATURE OF SI MOS-TRANSISTORS WITH PLASMA-NITRIDED GATE OXIDE
Authors:
EMRANI A
GHIBAUDO G
BALESTRA F
PIOT B
THIRION V
STRABONI A
Citation: A. Emrani et al., ELECTRICAL CHARACTERIZATION VERSUS TEMPERATURE OF SI MOS-TRANSISTORS WITH PLASMA-NITRIDED GATE OXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 89-92
Authors:
ROUXDITBUISSON O
GHIBAUDO G
BRINI J
LOHSE C
GUEGAN G
Citation: O. Rouxditbuisson et al., LOW-FREQUENCY NOISE AND RANDOM TELEGRAPH SIGNALS IN 0.35-MU-M SILICONCMOS DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 177-180
Authors:
JOMAAH J
BALESTRA F
GHIBAUDO G
Citation: J. Jomaah et al., LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSFETS - EXPERIMENTAL AND NUMERICAL-SIMULATION RESULTS, Microelectronic engineering, 22(1-4), 1993, pp. 383-386
Authors:
PAPADAS C
GHIBAUDO G
PANANAKAKIS G
RIVA C
Citation: C. Papadas et al., NUMERICAL TRANSIENT SIMULATION OF THE PROGRAMMING WINDOW DEGRADATION IN FLOTOX EEPROM CELLS, Solid-state electronics, 36(9), 1993, pp. 1303-1311
Authors:
EMRANI A
HAFEZ IM
BALESTRA F
GHIBAUDO G
HAOND M
Citation: A. Emrani et al., PERFORMANCE AND PHYSICAL-MECHANISMS IN LDD MOS-TRANSISTOR FROM ROOM TO LIQUID-HELIUM TEMPERATURES, Physica status solidi. a, Applied research, 140(2), 1993, pp. 115-118
Authors:
HAFEZ IM
GHIBAUDO G
BALESTRA F
Citation: Im. Hafez et al., STATIC CHARACTERIZATION OF N-MOS INVERTERS BETWEEN LIQUID-HELIUM AND ROOM TEMPERATURES, Physica status solidi. a, Applied research, 138(1), 1993, pp. 343-348
Authors:
PAPADAS C
GHIBAUDO G
MONSERIE C
PANANAKAKIS G
Citation: C. Papadas et al., RELIABILITY ISSUES OF SILICON-DIOXIDE STRUCTURES - APPLICATION TO FLOTOX EEPROM CELLS, Microelectronics and reliability, 33(11-12), 1993, pp. 1867-1908
Authors:
PAPADAS C
MORTINI P
MONSERIE C
GHIBAUDO G
PANANAKAKIS G
Citation: C. Papadas et al., RELIABILITY ISSUES OF OFFSET DRAIN TRANSISTORS AFTER DIFFERENT MODES OF STATIC ELECTRICAL STRESS, Microelectronics and reliability, 33(11-12), 1993, pp. 1921-1933
LOW-TEMPERATURE ELECTRICAL CHARACTERIZATION OF METAL-NITRIDED OXIDE-SILICON FIELD-EFFECT TRANSISTORS
Authors:
EMRANI A
GHIBAUDO G
BALESTRA F
PIOT B
THIRION V
STRABONI A
Citation: A. Emrani et al., LOW-TEMPERATURE ELECTRICAL CHARACTERIZATION OF METAL-NITRIDED OXIDE-SILICON FIELD-EFFECT TRANSISTORS, Journal of applied physics, 73(10), 1993, pp. 5241-5253
Authors:
PAPADAS C
GHIBAUDO G
PANANAKAKIS G
PIO F
RIVA C
GHEZZI P
Citation: C. Papadas et al., IMPACT OF REACTIVE ION ETCHING USING O2+CHF3 PLASMA ON THE ENDURANCE PERFORMANCE OF FLOTOX EEPROM CELLS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1549-1551
Authors:
MOISON B
PAPADAS C
GHIBAUDO G
MORTINI P
PANANAKAKIS G
Citation: B. Moison et al., NEW METHOD FOR THE EXTRACTION OF THE COUPLING RATIOS IN FLOTOX EEPROMCELLS, I.E.E.E. transactions on electron devices, 40(10), 1993, pp. 1870-1872
Authors:
RAIS K
GHIBAUDO G
BALESTRA F
Citation: K. Rais et al., TEMPERATURE-DEPENDENCE OF SUBSTRATE CURRENT IN SILICON CMOS DEVICES, Electronics Letters, 29(9), 1993, pp. 778-780
Authors:
EMRANI A
GHIBAUDO G
BALESTRA F
Citation: A. Emrani et al., GENERALIZED-METHOD FOR EXTRACTION OF MOSFET SOURCE-DRAIN SERIES RESISTANCE AGAINST TEMPERATURE, Electronics Letters, 29(9), 1993, pp. 786-788
Authors:
PAPADAS C
GHIBAUDO G
PIO F
RIVA C
MORTINI P
PANANAKAKIS G
Citation: C. Papadas et al., INFLUENCE OF RAPID THERMAL NITRIDATION PROCESS IN N2O AMBIENT ON THE ENDURANCE PERFORMANCE OF FLOTOX EEPROM CELLS, Electronics Letters, 29(2), 1993, pp. 242-243
Authors:
PAPADAS C
MORTINI P
GHIBAUDO G
PANANAKAKIS G
Citation: C. Papadas et al., ANALYTICAL MODELING OF THE PROGRAMMED WINDOW IN FLOTOX EEPROM CELLS, Electronics Letters, 29(1), 1993, pp. 122-124