AAAAAA
Results:
1-17
|
Results: 17
Authors:
CANDELORI A
GOMIERO E
GHIDINI G
PACCAGNELLA A
Citation: A. Candelori et al., MOSFET PARAMETER DEGRADATION AFTER FOWLER-NORDHEIM INJECTION STRESS, Microelectronics and reliability, 38(2), 1998, pp. 189-193
Authors:
SCARPA A
GHIBAUDO G
GHIDINI G
PANANAKAKIS G
PACCAGNELLA A
Citation: A. Scarpa et al., STRESS-INDUCED DEGRADATION FEATURES OF VERY THIN GATE OXIDES, Microelectronics and reliability, 38(2), 1998, pp. 195-199
Authors:
GHIDINI G
ALESSANDRI M
CLEMENTI C
PELLIZZER F
Citation: G. Ghidini et al., INFLUENCE OF CHARGE TRAPPING ON OXIDE SCALING DOWN, Microelectronics and reliability, 38(2), 1998, pp. 217-220
Authors:
GHIDINI G
CLEMENTI C
DRERA D
MAUGAIN F
Citation: G. Ghidini et al., THE IMPACT OF F-CONTAMINATION INDUCED BY THE PROCESS ON THE GATE OXIDE RELIABILITY, Microelectronics and reliability, 38(2), 1998, pp. 255-258
Authors:
SCARPA A
PACCAGNELLA A
MONTERA F
CANDELORI A
GHIBAUDO G
PANANAKAKIS G
GHIDINI G
FUOCHI PG
Citation: A. Scarpa et al., MODIFICATIONS OF FOWLER-NORDHEIM INJECTION CHARACTERISTICS IN GAMMA-IRRADIATED MOS DEVICES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1390-1395
Authors:
FRANCO G
CAMALLERI CM
RAINERI V
GHIDINI G
CLEMENTI C
PELLIZZER F
Citation: G. Franco et al., EFFECTS OF CLEANING AND POSTOXIDATION ANNEALING ON THIN OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1927-1935
Authors:
SCARPA A
GHIBAUDO G
GHIDINI G
PANANAKAKIS G
PACCAGNELLA A
Citation: A. Scarpa et al., STRESS-INDUCED LEAKAGE CURRENT IN ULTRA-THIN GATE OXIDES AFTER CONSTANT-CURRENT STRESS, Microelectronic engineering, 36(1-4), 1997, pp. 145-148
Authors:
ALESSANDRI M
CLEMENTI C
CRIVELLI B
GHIDINI G
PELLIZZER F
MARTIN F
IMAI M
IKEGAWA H
Citation: M. Alessandri et al., NITRIDATION IMPACT ON THIN OXIDE CHARGE TRAPPING, Microelectronic engineering, 36(1-4), 1997, pp. 211-214
Authors:
SCARPA A
PACCAGNELLA A
GHIDINI G
VIANELLO A
ZANONI E
Citation: A. Scarpa et al., INSTABILITY OF POST-FOWLER-NORDHEIM STRESS MEASUREMENTS OF MOS DEVICES, Solid-state electronics, 41(7), 1997, pp. 935-938
Authors:
GHIDINI G
TOSI M
CLEMENTI C
Citation: G. Ghidini et al., FEASIBILITY OF STEAM TUNNEL OXIDE FOR ADVANCED NON VOLATILE MEMORIES, Solid-state electronics, 41(7), 1997, pp. 975-979
Authors:
GHIDINI G
CLEMENTI C
Citation: G. Ghidini et C. Clementi, AN INNOVATIVE PROCESS SEQUENCE TO OBTAIN RELIABLE NITRIDED ACTIVE DIELECTRICS, Journal of non-crystalline solids, 216, 1997, pp. 198-201
Authors:
SCARPA A
PACCAGNELLA A
MONTERA F
GHIBAUDO G
PANANAKAKIS G
GHIDINI G
FUOCHI PG
Citation: A. Scarpa et al., IONIZING-RADIATION INDUCED LEAKAGE CURRENT ON ULTRA-THIN GATE OXIDES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1818-1825
Authors:
SCARPA A
GHIBAUDO G
PANANAKAKIS G
PACCAGNELLA A
GHIDINI G
Citation: A. Scarpa et al., RELIABILITY EXTRAPOLATION MODEL FOR STRESS-INDUCED-LEAKAGE CURRENT INTHIN SILICON-OXIDES, Electronics Letters, 33(15), 1997, pp. 1342-1344
Authors:
GHIDINI G
ALESSANDRI M
CLEMENTI C
DRERA D
PELLIZZER F
Citation: G. Ghidini et al., ELECTRICAL CHARACTERIZATION OF HIGHLY RELIABLE 8 NM OXIDE, Journal of the Electrochemical Society, 144(2), 1997, pp. 758-764
Authors:
PACCAGNELLA A
RIZZATO A
SCARPA A
ZANONI E
CRISENZA G
GHIDINI G
Citation: A. Paccagnella et al., ELECTRICAL AND RADIATION TESTS OF THIN TUNNEL OXIDES, Microelectronics and reliability, 36(7-8), 1996, pp. 1033-1044
Authors:
PACCAGNELLA A
CANDELORI A
MILANI A
FORMIGONI E
GHIDINI G
DRERA D
FUOCHI PG
LAVALE M
Citation: A. Paccagnella et al., BREAKDOWN PROPERTIES OF IRRADIATED MOS CAPACITORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2609-2616
Authors:
DAIELLI C
SALVANESCHI L
GHIDINI G
AMBROSELLI F
GATTI C
MARTINETTI M
Citation: C. Daielli et al., A NOVEL ITALIAN HAPLOTYPE PREDOMINATES IN HLA-B45-POSITIVE BONE-MARROW DONORS - HLA-A2, CW-ASTERISK-1601, B45, DRB1-ASTERISK-1101, DRB3-ASTERISK-0301, DQA1-ASTERISK-0102, DQB1-ASTERISK-0502, Tissue antigens, 47(4), 1996, pp. 341-343
Risultati:
1-17
|