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Results:
1-14
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Results: 14
Authors:
VORONKOV VB
GOLUBEV VG
GORSHKOV NI
MEDVEDEV AV
PEVTSOV AB
SUGLOBOV DN
FEOKTISTOV NA
Citation: Vb. Voronkov et al., FILMS OF A-SI-H DOPED WITH ERBIUM FROM THE METALORGANIC COMPOUND ER(HFA)(3)ASTERISK-DME, EMITTING AT 1.54 MU-M, Technical physics letters, 24(7), 1998, pp. 502-503
Authors:
BOGOMOLOV VN
GOLUBEV VG
KARTENKO NF
KURDYUKOV DA
PEVTSOV AB
PROKOFEV AV
RATNIKOV VV
FEOKTISTOV NA
SHARENKOVA NV
Citation: Vn. Bogomolov et al., FABRICATION OF REGULAR 3-DIMENSIONAL LATTICES OF SUBMICRON SILICON CLUSTERS IN AN SIO2 OPAL MATRIX, Technical physics letters, 24(4), 1998, pp. 326-327
Authors:
GOLUBEV VG
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
Citation: Vg. Golubev et al., MODIFIED METHOD OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF NANOCRYSTALLINE SILICON, Technical physics letters, 24(10), 1998, pp. 758-759
Authors:
VORONKOV VB
GOLUBEV VG
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
GORSHKOV NI
SUGLOBOV DN
Citation: Vb. Voronkov et al., PHOTOLUMINESCENCE OF A-SI-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION AND DOPED WITH ERBIUM FROM THE METALLORGANIC COMPOUND ER(HFA)(3)CENTER-DOT-DME, Physics of the solid state, 40(8), 1998, pp. 1301-1304
Authors:
ANDREEV BA
GOLUBEV VG
KROPOTOV GI
MAKSIMOV GA
SHMAGIN VB
Citation: Ba. Andreev et al., DETERMINATION OF ABSORPTION-COEFFICIENTS AND IMPURITY SPECIES IN SEMICONDUCTORS FROM PHOTOCONDUCTIVITY SPECTRA, Journal of analytical chemistry, 53(11), 1998, pp. 1046-1052
Authors:
GOLUBEV VG
DAVYDOV VY
MEDVEDEV AV
PEVTSOV AB
FEOKTISTOV NA
Citation: Vg. Golubev et al., RAMAN-SCATTERING SPECTRA AND ELECTRICAL-CONDUCTIVITY OF THIN SILICON FILMS WITH A MIXED AMORPHOUS-NANOCRYSTALLINE PHASE-COMPOSITION - DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION, Physics of the solid state, 39(8), 1997, pp. 1197-1201
Authors:
TERUKOV EI
KUDOYAROVA VK
MEZDROGINA MM
GOLUBEV VG
STURM A
FUHS W
Citation: Ei. Terukov et al., PHOTOLUMINESCENCE AT 1.54 MU-M IN ERBIUM-DOPED AMORPHOUS HYDROGENATEDSILICON, Semiconductors, 30(5), 1996, pp. 440-443
Authors:
GOLUBEV VG
ZHERZDEV AV
MOROZ GK
PATSEKIN AV
YAN DT
Citation: Vg. Golubev et al., STRONG PHOTOINDUCED INCREASE IN THE LUMINESCENCE INTENSITY OF ANODICALLY OXIDIZED POROUS SILICON, Semiconductors, 30(5), 1996, pp. 456-461
Authors:
ABRAMOV AS
VINOGRADOV AY
GOLUBEV VG
KOSAREV AI
MATYUSHKINA MA
PATSEKIN AV
Citation: As. Abramov et al., A STUDY OF AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS PRODUCED IN THE PLASMA OF A HIGH-FREQUENCY DISCHARGE, Semiconductors, 30(11), 1996, pp. 1011-1014
Authors:
GOLUBEV VG
KROPOTOV GI
PATSEKIN AV
SOBOLEV NA
SHEK EI
DUKIN AA
Citation: Vg. Golubev et al., FAR-INFRARED PHOTOCONDUCTIVITY OF SILICON IRRADIATED WITH FAST-NEUTRONS, Semiconductors, 29(10), 1995, pp. 981-983
Authors:
AVERKIEV NS
DOOKIN AA
GOLUBEV VG
KROPOTOV GI
KLAASSEN TO
WENCKEBACH WT
Citation: Ns. Averkiev et al., THE WIDTH OF THE SHALLOW DONORS AUTOIONIZING STATES IN SEMICONDUCTORS, Solid state communications, 93(5), 1995, pp. 453-453
Authors:
GOLUBEV VG
MOROZOVA LE
PEVTSOV AB
FEOKTISTOV NA
FLORINSKII VY
Citation: Vg. Golubev et al., COLLECTION OF NONEQUILIBRIUM CARRIERS GENERATED IN A-SI H AND A-SI/C/H STRUCTURES BY AN ELECTRON-BEAM/, Semiconductors, 28(3), 1994, pp. 274-277
FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS
Authors:
ANDREEV BA
GOLUBEV VG
EMTSEV VV
KROPOTOV GI
OGANESYAN GA
SCHMALZ K
Citation: Ba. Andreev et al., FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(4), 1993, pp. 315-323
Authors:
PROSHIN SA
GOLUBEV VG
WURFL S
SPANGLER J
SCHILZ A
PRETTL W
Citation: Sa. Proshin et al., MAGNETORESISTANCE OF N-GAAS AT FILAMENTARY CURRENT FLOW, Semiconductor science and technology, 8(7), 1993, pp. 1298-1302
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