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Results: 1-24 |
Results: 24
THERMAL CHARACTERIZATION OF IC PASSIVATION LAYERS USING JOULE HEATINGAND OPTICAL THERMOMETRY
Authors: JU YS KURABAYASHI K GOODSON KE
Citation: Ys. Ju et al., THERMAL CHARACTERIZATION OF IC PASSIVATION LAYERS USING JOULE HEATINGAND OPTICAL THERMOMETRY, Microscale thermophysical engineering, 2(2), 1998, pp. 101-110
PRECISION-MEASUREMENT AND MAPPING OF DIE-ATTACH THERMAL-RESISTANCE
Authors: KURABAYASHI K GOODSON KE
Citation: K. Kurabayashi et Ke. Goodson, PRECISION-MEASUREMENT AND MAPPING OF DIE-ATTACH THERMAL-RESISTANCE, IEEE transactions on components, packaging, and manufacturing technology. Part A, 21(3), 1998, pp. 506-514
LOW-STIFFNESS SILICON CANTILEVERS WITH INTEGRATED HEATERS AND PIEZORESISTIVE SENSORS FOR HIGH-DENSITY AFM THERMOMECHANICAL DATA-STORAGE
Authors: CHUI BW STOWE TD JU YS GOODSON KE KENNY TW MAMIN HJ TERRIS BD RIED RP RUGAR D
Citation: Bw. Chui et al., LOW-STIFFNESS SILICON CANTILEVERS WITH INTEGRATED HEATERS AND PIEZORESISTIVE SENSORS FOR HIGH-DENSITY AFM THERMOMECHANICAL DATA-STORAGE, Journal of microelectromechanical systems, 7(1), 1998, pp. 69-78
APPLICATIONS OF MICRON-SCALE PASSIVE DIAMOND LAYERS FOR THE INTEGRATED-CIRCUITS AND MICROELECTROMECHANICAL SYSTEMS INDUSTRIES
Authors: TOUZELBAEV MN GOODSON KE
Citation: Mn. Touzelbaev et Ke. Goodson, APPLICATIONS OF MICRON-SCALE PASSIVE DIAMOND LAYERS FOR THE INTEGRATED-CIRCUITS AND MICROELECTROMECHANICAL SYSTEMS INDUSTRIES, DIAMOND AND RELATED MATERIALS, 7(1), 1998, pp. 1-14
SHORT-TIME-SCALE THERMAL MAPPING OF MICRODEVICES USING A SCANNING THERMOREFLECTANCE TECHNIQUE
Authors: JU YS GOODSON KE
Citation: Ys. Ju et Ke. Goodson, SHORT-TIME-SCALE THERMAL MAPPING OF MICRODEVICES USING A SCANNING THERMOREFLECTANCE TECHNIQUE, Journal of heat transfer, 120(2), 1998, pp. 306-313
TEMPERATURE-DEPENDENT THERMAL-CONDUCTIVITY OF SINGLE-CRYSTAL SILICON LAYERS IN SOI SUBSTRATES
Authors: ASHEGHI M TOUZELBAEV MN GOODSON KE LEUNG YK WONG SS
Citation: M. Asheghi et al., TEMPERATURE-DEPENDENT THERMAL-CONDUCTIVITY OF SINGLE-CRYSTAL SILICON LAYERS IN SOI SUBSTRATES, Journal of heat transfer, 120(1), 1998, pp. 30-36
SIZE EFFECT ON THERMAL CONDUCTION IN SILICON-ON-INSULATOR DEVICES UNDER ELECTROSTATIC DISCHARGE (ESD) CONDITIONS
Authors: JU YS GOODSON KE
Citation: Ys. Ju et Ke. Goodson, SIZE EFFECT ON THERMAL CONDUCTION IN SILICON-ON-INSULATOR DEVICES UNDER ELECTROSTATIC DISCHARGE (ESD) CONDITIONS, JPN J A P 2, 36(6B), 1997, pp. 798-800
REPORT OF WORKSHOP - THERMOPHYSICAL PHENOMENA IN MICROSCALE SENSORS, DEVICES, AND STRUCTURES
Authors: CHEN G GOODSON KE GRIGOROPOULOS C HIPWELL MC LIEPMANN D MAJUMDAR A MARUYAMA S THUNDAT T TIEN CL TIEN NC
Citation: G. Chen et al., REPORT OF WORKSHOP - THERMOPHYSICAL PHENOMENA IN MICROSCALE SENSORS, DEVICES, AND STRUCTURES, Microscale thermophysical engineering, 1(4), 1997, pp. 267-274
NEAR-FIELD OPTICAL THERMOMETRY
Authors: GOODSON KE ASHEGHI M
Citation: Ke. Goodson et M. Asheghi, NEAR-FIELD OPTICAL THERMOMETRY, Microscale thermophysical engineering, 1(3), 1997, pp. 225-235
IMPROVED HEAT SINKING FOR LASER-DIODE ARRAYS USING MICROCHANNELS IN CVD DIAMOND
Authors: GOODSON KE KURABAYASHI K PEASE RFW
Citation: Ke. Goodson et al., IMPROVED HEAT SINKING FOR LASER-DIODE ARRAYS USING MICROCHANNELS IN CVD DIAMOND, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 20(1), 1997, pp. 104-109
IMPACT OF NUCLEATION DENSITY ON THERMAL-RESISTANCE NEAR DIAMOND-SUBSTRATE BOUNDARIES
Authors: TOUZELBAEV MN GOODSON KE
Citation: Mn. Touzelbaev et Ke. Goodson, IMPACT OF NUCLEATION DENSITY ON THERMAL-RESISTANCE NEAR DIAMOND-SUBSTRATE BOUNDARIES, Journal of thermophysics and heat transfer, 11(4), 1997, pp. 506-512
HEATING MECHANISMS OF LDMOS AND LIGBT IN ULTRATHIN SOI
Authors: LEUNG YK PAUL AK GOODSON KE PLUMMER JD WONG SS
Citation: Yk. Leung et al., HEATING MECHANISMS OF LDMOS AND LIGBT IN ULTRATHIN SOI, IEEE electron device letters, 18(9), 1997, pp. 414-416
SHORT-TIMESCALE THERMAL MAPPING OF SEMICONDUCTOR-DEVICES
Authors: JU YS KADING OW LEUNG YK WONG SS GOODSON KE
Citation: Ys. Ju et al., SHORT-TIMESCALE THERMAL MAPPING OF SEMICONDUCTOR-DEVICES, IEEE electron device letters, 18(5), 1997, pp. 169-171
THERMAL MAPPING OF INTERCONNECTS SUBJECTED TO BRIEF ELECTRICAL STRESSES
Authors: JU YS GOODSON KE
Citation: Ys. Ju et Ke. Goodson, THERMAL MAPPING OF INTERCONNECTS SUBJECTED TO BRIEF ELECTRICAL STRESSES, IEEE electron device letters, 18(11), 1997, pp. 512-514
PHONON-BOUNDARY SCATTERING IN THIN SILICON LAYERS
Authors: ASHEGHI M LEUNG YK WONG SS GOODSON KE
Citation: M. Asheghi et al., PHONON-BOUNDARY SCATTERING IN THIN SILICON LAYERS, Applied physics letters, 71(13), 1997, pp. 1798-1800
THERMAL CONDUCTION IN NONHOMOGENEOUS CVD DIAMOND LAYERS IN ELECTRONICMICROSTRUCTURES
Authors: GOODSON KE
Citation: Ke. Goodson, THERMAL CONDUCTION IN NONHOMOGENEOUS CVD DIAMOND LAYERS IN ELECTRONICMICROSTRUCTURES, Journal of heat transfer, 118(2), 1996, pp. 279-286
PREDICTION AND MEASUREMENT OF TEMPERATURE-FIELDS IN SILICON-ON-INSULATOR ELECTRONIC-CIRCUITS
Authors: GOODSON KE FLIK MI SU LT ANTONIADIS DA
Citation: Ke. Goodson et al., PREDICTION AND MEASUREMENT OF TEMPERATURE-FIELDS IN SILICON-ON-INSULATOR ELECTRONIC-CIRCUITS, Journal of heat transfer, 117(3), 1995, pp. 574-581
EXPERIMENTAL INVESTIGATION OF THERMAL CONDUCTION NORMAL TO DIAMOND-SILICON BOUNDARIES
Authors: GOODSON KE KADING OW ROSLER M ZACHAI R
Citation: Ke. Goodson et al., EXPERIMENTAL INVESTIGATION OF THERMAL CONDUCTION NORMAL TO DIAMOND-SILICON BOUNDARIES, Journal of applied physics, 77(4), 1995, pp. 1385-1392
THERMAL CONDUCTION NORMAL TO DIAMOND-SILICON BOUNDARIES
Authors: GOODSON KE KADING OW ROSNER M ZACHAI R
Citation: Ke. Goodson et al., THERMAL CONDUCTION NORMAL TO DIAMOND-SILICON BOUNDARIES, Applied physics letters, 66(23), 1995, pp. 3134-3136
PREDICTION AND MEASUREMENT OF THE THERMAL-CONDUCTIVITY OF AMORPHOUS DIELECTRIC LAYERS
Authors: GOODSON KE FLIK MI SU LT ANTONIADIS DA
Citation: Ke. Goodson et al., PREDICTION AND MEASUREMENT OF THE THERMAL-CONDUCTIVITY OF AMORPHOUS DIELECTRIC LAYERS, Journal of heat transfer, 116(2), 1994, pp. 317-324
MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS
Authors: SU LT CHUNG JE ANTONIADIS DA GOODSON KE FLIK MI
Citation: Lt. Su et al., MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 69-75
THERMAL CONDUCTION IN METALLIZED SILICON-DIOXIDE LAYERS ON SILICON
Authors: KADING OW SKURK H GOODSON KE
Citation: Ow. Kading et al., THERMAL CONDUCTION IN METALLIZED SILICON-DIOXIDE LAYERS ON SILICON, Applied physics letters, 65(13), 1994, pp. 1629-1631
ANNEALING-TEMPERATURE DEPENDENCE OF THE THERMAL-CONDUCTIVITY OF LPCVDSILICON-DIOXIDE LAYERS
Authors: GOODSON KE FLIK MI SU LT ANTONIADIS DA
Citation: Ke. Goodson et al., ANNEALING-TEMPERATURE DEPENDENCE OF THE THERMAL-CONDUCTIVITY OF LPCVDSILICON-DIOXIDE LAYERS, IEEE electron device letters, 14(10), 1993, pp. 490-492
INTRINSIC SUPERCONDUCTING RADIATION DETECTOR
Authors: FLIK MI ZHANG ZM GOODSON KE
Citation: Mi. Flik et al., INTRINSIC SUPERCONDUCTING RADIATION DETECTOR, Applied physics letters, 62(22), 1993, pp. 2862-2864
Risultati: 1-24 |