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Results: 1-8 |
Results: 8
THIN-FILMS OF HGCDTE ON SILICON SURFACES
Authors: WISZ G SHEREGII E KUZMA M SMERTENKO PS SVECHNIKOV SV GORBACH TY MAZIARZ W MORGIEL J CIACH R
Citation: G. Wisz et al., THIN-FILMS OF HGCDTE ON SILICON SURFACES, Thin solid films, 318(1-2), 1998, pp. 33-37
AUGER SPECTROSCOPIC INVESTIGATION OF A-C-H FILMS ON SILICON MICRORELIEF SUBSTRATES
Authors: GORBACH TY MATVEEVA LA SVECHNIKOV SV VASIN AV VENGER EF
Citation: Ty. Gorbach et al., AUGER SPECTROSCOPIC INVESTIGATION OF A-C-H FILMS ON SILICON MICRORELIEF SUBSTRATES, Carbon (New York), 36(5-6), 1998, pp. 513-515
EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING
Authors: GORBACH TY SVECHNIKOV SV SMERTENKO PS TULCHINSKII PG BONDARENKO AV VOLCHEK SA DOROFEEV AM MASINI G MAIELLO G LAMONICA S FERRARI A
Citation: Ty. Gorbach et al., EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING, Semiconductors, 31(12), 1997, pp. 1221-1224
SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF
Authors: GORBACH TY RUDKO GY SMERTENKO PS SVECHNIKOV SV VALAKH MY BONDARENKO VP DOROFEEV AM
Citation: Ty. Gorbach et al., SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF, Semiconductor science and technology, 11(4), 1996, pp. 601-606
DEPOSITION OF HGCDTE EPITAXIAL LAYERS ON ANISOTROPICALLY ETCHED SILICON SURFACES BY LASER EVAPORATION
Authors: GORBACH TY KUZMA M SHEREGII E SMERTENKO PS SVECHNIKOV SV WISZ G
Citation: Ty. Gorbach et al., DEPOSITION OF HGCDTE EPITAXIAL LAYERS ON ANISOTROPICALLY ETCHED SILICON SURFACES BY LASER EVAPORATION, Applied surface science, 96-8, 1996, pp. 881-886
SPONTANEOUS ANISOTROPIC CHEMICAL ETCHING AS A NANOSTRUCTURE SURFACE MODIFICATION METHOD FOR THE A(III)B(V) SEMICONDUCTORS
Authors: GORBACH TY SVECHNIKOV G
Citation: Ty. Gorbach et G. Svechnikov, SPONTANEOUS ANISOTROPIC CHEMICAL ETCHING AS A NANOSTRUCTURE SURFACE MODIFICATION METHOD FOR THE A(III)B(V) SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 224-229
PHOTOLUMINESCENCE OF ANISOTROPICALLY ETCHED SILICON
Authors: GORBACH TY RUDKO GY SMERTENKO PS SVECHNIKOV SV VALAKH MY
Citation: Ty. Gorbach et al., PHOTOLUMINESCENCE OF ANISOTROPICALLY ETCHED SILICON, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 183-186
SPALLATION OF PEAKS IN SPECTRA OF SEMICON DUCTOR-SELF-OXIDE HETEROSYSTEM ELECTROREFLECTION
Authors: VENGER EF GORBACH TY MATVEEVA LA SVECHNIKOV SV
Citation: Ef. Venger et al., SPALLATION OF PEAKS IN SPECTRA OF SEMICON DUCTOR-SELF-OXIDE HETEROSYSTEM ELECTROREFLECTION, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 60-64
Risultati: 1-8 |